AFT27S010NT1 [NXP]
Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V;
| 型号： | AFT27S010NT1 |
| 厂家： | 
NXP |
| 描述： | Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V |
| 文件： | 总27页 (文件大小：1159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: AFT27S010N
Rev. 0, 11/2013
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 1.26 W RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 728 to 2700 MHz.
AFT27S010NT1
2100 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
728–2700 MHz, 1.26 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
21.6
21.8
21.7
(%)
23.2
23.0
22.6
9.1
9.0
8.7
--42.0
--41.5
--41.7
-- 11
-- 1 5
-- 1 5
2600 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
PLD--1.5W
PLASTIC
Probability on CCDF.(1)
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2500 MHz
2600 MHz
2700 MHz
(dB)
19.6
21.0
19.6
(%)
22.0
22.7
21.2
9.8
9.4
8.9
--44.8
--41.4
--39.7
-- 7
-- 1 5
-- 5
RF /V
in GS
RF /V
out DS
2300 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
(Top View)
Probability on CCDF.(1)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2300 MHz
2350 MHz
2400 MHz
(dB)
21.2
21.6
20.7
(%)
23.6
22.6
21.0
9.0
8.6
8.3
--40.9
--40.0
--40.1
-- 1 0
-- 2 2
-- 9
Figure 1. Pin Connections
700 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
728 MHz
748 MHz
768 MHz
(dB)
24.3
24.3
24.3
(%)
25.5
24.7
23.8
9.3
9.4
9.5
--44.0
--43.9
--43.6
-- 1 2
-- 1 2
-- 1 2
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driven Device with Internal RF Feedback
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.
1. All data measured in fixture with device soldered to heat sink.
Freescale Semiconductor, Inc., 2013. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
--0.5, +65
--6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
3.5
C/W
JC
Case Temperature 77C, 1.3 W CW, 28 Vdc, I = 90 mA, 2140 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 12.1 Adc)
V
V
0.8
1.5
0.1
1.2
1.8
0.2
1.6
2.3
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 90 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 6 Vdc, I = 121 Adc)
V
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 90 mA, P = 1.26 W Avg., f = 2170 MHz, Single--Carrier
DD
DQ
out
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset.
Power Gain
G
20.0
18.5
—
21.7
21.5
--40.6
-- 1 4
—
—
dB
%
ps
D
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
--37.9
-- 9
dBc
dB
—
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I
= 90 mA, f = 2140 MHz
DQ
VSWR 5:1 at 32 Vdc, 13.9 W CW Output Power
(3 dB Input Overdrive from 10 W CW Rated Power)
No Device Degradation
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 90 mA, 2110--2170 MHz Bandwidth
DD
DQ
P
@ 1 dB Compression Point, CW
P1dB
—
—
10
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
--12.6
the 2110--2170 MHz frequency range.)
VBW Resonance Point
VBW
—
120
—
MHz
res
(IMD Seventh Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P = 1.26 W Avg.
G
—
—
0.20
—
—
dB
out
F
Gain Variation over Temperature
G
0.011
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.004
—
dB/C
(--30C to +85C)
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
3
V
V
DD
GG
C7
C6
C13
C12
C8
R1
C5*
C1*
C4
C3
Q1
C2
C9
C10
C11
AFT27S010N
Rev. 2
2100MHz
D53402
V
DD
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heat sink.
Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2170 MHz
Table 6. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2170 MHz
Part
Description
9.1 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1, C5, C6, C8, C9
ATC100B9R1JT500XT
C2
1.1 pF Chip Capacitor
2.0 pF Chip Capacitor
1.0 pF Chip Capacitor
10 F Chip Capacitors
RF Power LDMOS Transistor
2.37 Chip Resistor
ATC100B1R1JT500XT
ATC100B2R0JT500XT
ATC100B1R0JT500XT
GRM32ER61H106KA12L
AFT27S010NT1
ATC
C3
ATC
C4
ATC
C7, C10, C11, C12, C13
Murata
Freescale
Vishay
MTL
Q1
R1
CRCW12062R37FKEA
D53402
PCB
Rogers RO4350B, 0.020, = 3.66
r
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS — 2110--2170 MHz
24
25
24
23
22
D
23
V
= 28 Vdc, P = 1.26 W (Avg.)
out
= 90 mA, Single--Carrier W--CDMA
DD
22
I
DQ
21
G
ps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
21
20
19
18
17
16
15
20
-- 4 0
-- 4 1
-- 4 2
-- 4 3
-- 4 4
-- 4 5
-- 6
-- 0 . 4
-- 0 . 6
-- 0 . 8
-- 1
IRL
-- 1 0
-- 1 4
-- 1 8
-- 2 2
-- 2 6
ACPR
-- 1 . 2
-- 1 . 4
PARC
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
-- 2 0
IM3--U
-- 3 0
IM3--L
IM5--U
-- 4 0
IM5--L
IM7--U
-- 5 0
-- 6 0
-- 7 0
V
= 28 Vdc, P = 7.6 W (PEP), I = 90 mA
out DQ
DD
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
IM7--L
100 200
1
10
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 0
23
22.5
22
1
0
35
30
D
PARC
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
--1 dB = 1.4 W
-- 1
-- 2
25
20
15
10
5
G
ps
21.5
21
--3 dB = 2.55 W
ACPR
--2 dB = 1.9 W
-- 3
-- 4
V
= 28 Vdc, I = 90 mA, f = 2140 MHz
DD
DQ
20.5
20
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
-- 5
0.5
1
1.5
2
2.5
3
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio Compression
(PARC) versus Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 2110--2170 MHz
24
60
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
V
= 28 Vdc, I = 90 mA, Single--Carrier W--CDMA
DQ
DD
D
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
ACPR
23
22
21
20
19
18
50
40
30
20
10
0
@ 0.01% Probability on CCDF
G
ps
2170 MHz
2140 MHz
2110 MHz
2110 MHz
2140 MHz
2170 MHz
2170 MHz
2140 MHz
2110 MHz
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
35
25
Gain
22
20
18
15
5
V
P
= 28 Vdc
= 0 dBm
= 90 mA
DD
in
I
DQ
-- 5
16
IRL
14
12
-- 1 5
-- 2 5
1950 1990 2030 2070 2110 2150
2190 2230 2270
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
6
V
= 28 Vdc, I = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Output Power
P1dB
(1)
Z
load
D
AM/PM
f
Z
Z
in
source
()
(%)
60.2
59.5
60.1
()
Gain (dB)
21.0
(dBm)
41.2
(W)
13
(MHz)
()
()
2110
2140
2170
1.23 - j0.107
1.08 - j0.422
1.12 - j0.0337
0.698 + j0.572
0.877 + j0.537
1.26 + j0.455
5.85 + j3.49
5.79 + j3.28
5.57 + j3.12
-12
-13
-11
20.8
41.2
13
20.7
41.1
13
Max Output Power
P3dB
(2)
Z
D
AM/PM
f
Z
Z
in
load
source
()
(%)
59.6
58.6
59.8
()
Gain (dB)
18.7
(dBm)
42.0
(W)
16
(MHz)
()
()
2110
2140
2170
1.23 - j0.107
1.08 - j0.422
1.12 - j0.0337
0.592 + j0.741
0.807 + j0.78
1.25 + j0.806
6.75 + j2.96
6.62 + j2.72
6.47 + j2.61
-18
-20
-17
18.5
42.0
16
18.4
42.0
16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Figure 8. Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Drain Efficiency
P1dB
(1)
Z
load
D
AM/PM
f
Z
Z
in
source
()
(%)
67.5
66.6
67.3
()
Gain (dB)
22.7
(dBm)
39.7
(W)
9
(MHz)
()
()
2110
2140
2170
1.23 - j0.107
1.08 - j0.422
1.12 - j0.0337
0.609 + j0.446
0.736 + j0.434
1.03 + j0.312
3.56 + j6.04
3.63 + j5.62
3.37 + j5.39
-20
-21
-19
22.4
39.9
10
9
22.5
39.6
Max Drain Efficiency
P3dB
(2)
Z
D
AM/PM
f
Z
Z
in
load
source
()
(%)
67.3
65.9
67.1
()
Gain (dB)
20.5
(dBm)
40.5
(W)
11
(MHz)
()
()
2110
2140
2170
1.23 - j0.107
1.08 - j0.422
1.12 - j0.0337
0.512 + j0.627
0.671 + j0.667
1.05 + j0.666
3.80 + j5.81
3.77 + j5.41
3.83 + j5.15
-29
-31
-27
20.3
40.6
11
20.2
40.6
12
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
8
8
39.5
38.5
39
40
37.5
38
7
6
5
7
52
64
66
62
60
6
5
40.5
41
E
E
58
56
4
3
2
1
0
4
3
2
1
0
P
P
54
50
52
39.5
38
39
3
4
5
6
7
3
4
5
6
7
2
8
9
10
2
8
9
10
REAL ()
REAL ()
Figure 10. P1dB Load Pull Output Power Contours (dBm)
Figure 11. P1dB Load Pull Efficiency Contours (%)
8
8
-- 2 0
-- 2 2
-- 2 6
-- 2 8
23.5
7
7
6
5
22.5
23
-- 1 8
-- 1 6
6
E
E
22
5
21.5
4
4
3
2
1
0
21
-- 2 4
P
P
3
20.5
-- 1 4
2
20
1
-- 1 2
19.5
0
3
4
5
6
7
2
8
9
10
3
4
5
6
7
2
8
9
10
REAL ()
REAL ()
Figure 13. P1dB Load Pull AM/PM Contours ()
Figure 12. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
8
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
8
8
38
38.5 39.5
39
40
7
6
5
7
54
41
40.5
6
60
62
P
64
41.5
E
E
5
58
4
3
2
1
0
4
3
2
1
0
P
56
52
54
50
3
4
5
6
7
3
4
5
6
7
2
8
9
10
2
8
9
10
REAL ()
REAL ()
Figure 14. P3dB Load Pull Output Power Contours (dBm)
Figure 15. P3dB Load Pull Efficiency Contours (%)
8
8
21.5
21
7
7
6
5
-- 3 2
E
20.5
20
6
5
E
-- 2 8
19.5
19
P
-- 3 4
-- 3 0
-- 2 6
-- 2 4
4
3
2
1
0
4
3
2
1
0
-- 2 2
-- 2 0
P
18.5
18
17.5
3
4
5
6
7
2
8
9
10
3
4
5
6
7
2
8
9
10
REAL ()
REAL ()
Figure 17. P3dB Load Pull AM/PM Contours ()
Figure 16. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
9
ALTERNATE CHARACTERISTICS — 2500--2700 MHz
V
V
DD
GG
C13
C12
C11
C6
C5
C7
R1
C4
C1
Q1
C3
C2
C8
C9
AFT27S010N
Rev. 2
2300MHz/2500MHz
C10
D53817
V
DD
NOTE: All data measured in fixture with device soldered to heat sink.
Figure 18. AFT27S010NT1 Test Circuit Component Layout — 2500--2700 MHz
Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2500--2700 MHz
Part
Description
6.8 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1, C4, C5, C7, C8
ATC100B6R8JT500XT
C2
1.2 pF Chip Capacitor
ATC100B1R2JT500XT
ATC100B1R0JT500XT
GRM32ER61H106KA12L
227CKS050M
ATC
C3
1 pF Chip Capacitor
ATC
C6, C9, C10, C11, C12
10 F Chip Capacitors
Murata
Illinois Capacitor
Freescale
Vishay
C13
Q1
220 F, 50 V Electrolytic Capacitor
RF Power LDMOS Transistor
4.75 Chip Resistor
AFT27S010NT1
R1
CRCW12064R75FKEA
D53817
PCB
Rogers RO4350B, 0.020, = 3.66
MTL
r
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
10
TYPICAL CHARACTERISTICS — 2500--2700 MHz
24
23.5
D
23
22.5
22
23
22
V
= 28 Vdc, P = 1.26 W (Avg.)
out
= 90 mA, Single--Carrier W--CDMA
DD
21
I
DQ
21.5
21
20
3.84 MHz Channel Bandwidth
G
ps
-- 3 6
-- 3 8
-- 4 0
-- 4 2
-- 4 4
-- 4 6
0
0
IRL
-- 5
-- 0 . 5
-- 1
20.5
20
PARC
-- 1 0
-- 1 5
-- 2 0
-- 2 5
19.5
19
-- 1 . 5
-- 2
ACPR
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
18.5
-- 2 . 5
2480 2510 2540 2570 2600 2630 2660 2690 2720
f, FREQUENCY (MHz)
Figure 19. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
65
55
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
24
22
20
18
16
14
12
V
= 28 Vdc, I = 90 mA, Single--Carrier, W--CDMA
DQ
DD
3.84 MHz Channel Bandwidth, Input Signal = 9.9 dB @
0.01% Probability on CCDF
2500 MHz
2700 MHz
G
ps
45
35
ACPR
2700 MHz
2600 MHz
25
15
5
2600 MHz
2500 MHz
D
2500 MHz
2700 MHz
2600 MHz
0.3
1
10
20
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 20. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
10
5
V
P
= 28 Vdc
= 0 dBm
= 90 mA
DD
25
20
15
in
I
DQ
Gain
0
-- 5
-- 1 0
-- 1 5
-- 2 0
10
IRL
5
0
2300
2500
2600
2700
2800
2900
2400
f, FREQUENCY (MHz)
Figure 21. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
11
ALTERNATE CHARACTERIZATION — 2300--2400 MHz
V
V
DD
GG
C13
C12
C11
C6
C5
C7
R1
C1
C14
C4
Q1
C3
C8
C2
C9
AFT27S010N
Rev. 2
2300MHz/2500MHz
C10
D53817
V
DD
NOTE: All data measured in fixture with device soldered to heat sink.
Figure 22. AFT27S010NT1 Test Circuit Component Layout — 2300--2400 MHz
Table 8. AFT27S010NT1 Test Circuit Component Designations and Values — 2300--2400 MHz
Part
Description
6.8 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1, C4, C5, C7, C8
ATC100B6R8JT500XT
C2, C14
1 pF Chip Capacitors
ATC100B1R0JT500XT
ATC100B1R2JT500XT
GRM32ER61H106KA12L
227CKS050M
ATC
C3
1.2 pF Chip Capacitor
ATC
C6, C9, C10, C11, C12
10 F Chip Capacitors
Murata
Illinois Capacitor
Freescale
Vishay
C13
Q1
220 F, 50 V Electrolytic Capacitor
RF Power LDMOS Transistor
4.75 , Chip Resistor
AFT27S010NT1
R1
CRCW12064R75FKEA
D53817
PCB
Rogers RO4350B, 0.020, = 3.66
MTL
r
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
12
TYPICAL CHARACTERISTICS — 2300--2400 MHz
22
24
23
21.8
V
P
DQ
= 28 Vdc
DD
out
= 1.26 W (Avg.)
21.6
21.4
21.2
22
D
I
= 90 mA
21
Single--Carrier W--CDMA
20
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
G
ps
0
0
-- 3 9
-- 4 0
-- 4 1
-- 4 2
-- 4 3
-- 4 4
21
20.8
20.6
20.4
20.2
20
ACPR
-- 5
-- 0 . 5
-- 1
-- 1 0
-- 1 5
-- 2 0
-- 2 5
PARC
IRL
-- 1 . 5
-- 2
-- 2 . 5
2290 2305 2320 2335 2350 2365 2380 2395 2410
f, FREQUENCY (MHz)
Figure 23. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
26
24
22
60
50
10
V
= 28 Vdc, I = 90 mA, Single--Carrier
DQ
DD
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal = 9.9 dB @ 0.01%
Probability on CCDF
0
2300 MHz
2350 MHz
40
30
20
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
2400 MHz
20
18
16
14
G
ps
2350 MHz
ACPR
D
2300 MHz
2350 MHz
2300 MHz
2400 MHz
2400 MHz
0.3
10
20
1
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 24. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
5
0
25
20
15
Gain
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
10
IRL
V
P
= 28 Vdc
= 0 dBm
= 90 mA
DD
5
0
in
I
DQ
2050
2250
2350
2450
2550
2650
2150
f, FREQUENCY (MHz)
Figure 25. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
13
V
= 28 Vdc, I = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
()
load
()
D
source
()
in
(%)
55.9
55.1
55.8
56.2
57.5
Gain (dB)
20.1
(dBm)
40.9
40.9
40.8
41.3
41.0
(W)
12
12
12
13
13
(MHz)
2300
2400
2500
2600
2690
1.12 - j1.10
1.06 - j1.59
1.00 - j1.60
0.985 - j3.50
1.10 - j3.13
0.995 + j1.38
0.948 + j1.96
1.29 + j1.95
0.743 + j3.66
1.48 + j2.98
5.39 + j2.23
5.09 + j1.86
4.51 + j1.56
4.81 + j1.10
4.14 + j0.987
-12
-12
-10
-14
-12
19.8
19.2
19.0
19.0
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
55.0
54.4
55.8
55.8
57.1
Gain (dB)
17.8
(dBm)
41.7
41.7
41.7
42.0
41.8
(W)
15
15
15
16
15
(MHz)
2300
2400
2500
2600
2690
1.12 - j1.10
0.919 + j1.64
6.28 + j1.74
5.86 + j1.41
5.40 + j1.17
5.37 + j0.912
5.04 + j0.759
-19
-19
-17
-22
-18
1.06 - j1.59
1.00 - j1.60
0.985 - j3.50
1.10 - j3.13
0.861 + j2.23
1.37 + j2.32
0.579 + j3.82
1.74 + j3.43
17.5
16.9
16.9
16.8
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Figure 26. Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
()
load
()
D
source
()
in
(%)
61.9
60.4
61.1
60.7
62.0
Gain (dB)
21.6
(dBm)
39.8
(W)
9
(MHz)
2300
2400
2500
2600
2690
1.12 - j1.10
1.06 - j1.59
1.00 - j1.60
0.985 - j3.50
1.10 - j3.13
0.855 + j1.22
0.829 + j1.80
1.04 + j1.82
0.709 + j3.49
1.14 + j2.91
3.36 + j4.23
3.34 + j3.53
3.21 + j3.00
3.17 + j2.53
2.87 + j2.16
-20
-19
-16
-20
-18
21.2
39.9
10
20.8
20.0
20.4
40.0
40.5
40.2
10
11
10
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
61.1
59.8
61.2
59.7
61.7
Gain (dB)
19.4
(dBm)
40.7
40.6
40.8
41.5
41.1
(W)
12
12
12
14
13
(MHz)
2300
2400
2500
2600
2690
1.12 - j1.10
0.803 + j1.51
3.96 + j4.10
3.70 + j3.45
3.58 + j2.94
4.15 + j2.29
3.40 + j2.01
-27
-27
-24
-26
-25
1.06 - j1.59
1.00 - j1.60
0.985 - j3.50
1.10 - j3.13
0.757 + j2.07
1.15 + j2.18
0.556 + j3.73
1.43 + j3.33
19.1
18.7
17.8
18.2
(1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Figure 27. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
14
P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
6
5
6
37
37.5
46
46
39
39.5
38
E
38.5
5
4
40
4
3
3
2
E
56
54
40.5
58
60
52
50
2
P
P
48
1
1
46
0
0
40
39
39.5
-- 1
-- 1
3
4
3
4
2
5
6
7
8
2
5
6
7
8
REAL ()
REAL ()
Figure 28. P1dB Load Pull Output Power Contours (dBm)
Figure 29. P1dB Load Pull Efficiency Contours (%)
6
5
6
5
4
21.5
21
22
-- 2 2
-- 2 4
4
3
-- 1 6
-- 2 0
20.5
20
3
E
E
-- 1 8
-- 1 4
19.5
2
2
P
P
-- 1 2
-- 1 0
19
1
1
18.5
18
0
0
-- 1
-- 1
3
4
3
4
2
5
6
7
8
2
5
6
7
8
REAL ()
REAL ()
Figure 31. P1dB Load Pull AM/PM Contours ()
Figure 30. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
15
P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
6
5
6
48
50
48
38
39
46
5
37.5
38.5
50
39.5
40
40.5
41
4
4
3
3
2
E
E
60
58
56
41.5
2
54
52
50
P
P
1
1
48
0
0
46
40
41
-- 1
-- 1
3
4
3
4
2
5
6
7
8
2
5
6
7
8
REAL ()
REAL ()
Figure 32. P3dB Load Pull Output Power Contours (dBm)
Figure 33. P3dB Load Pull Efficiency Contours (%)
6
5
6
-- 1 4
-- 2 2
-- 2 4
5
4
-- 2 8
-- 3 0
19.5
19
20
E
4
3
18.5
P
18
-- 2 0
-- 2 6
-- 1 8
3
E
-- 1 6
17.5
17
2
2
P
1
1
16.5
16
0
0
-- 1
-- 1
3
4
3
4
2
5
6
7
8
2
5
6
7
8
REAL ()
REAL ()
Figure 35. P3dB Load Pull AM/PM Contours ()
Figure 34. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
16
ALTERNATE CHARACTERIZATION — 728--768 MHz
V
V
DD
GG
C15
C14
C11
C10
C6
C5
C8
R1
Q1
C7*
C9*
C1*
C2
C3
C4
AFT27S010N
Rev. 1
728MHz
C12
C13
D53406
C16
C17
V
DD
*C1, C7 and C9 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heat sink.
Figure 36. AFT27S010NT1 Test Circuit Component Layout — 728--768 MHz
Table 9. AFT27S010NT1 Test Circuit Component Designations and Values — 728--768 MHz
Part
Description
82 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1, C9
C2
ATC100B820JT500XT
3.9 pF Chip Capacitor
1.7 pF Chip Capacitor
2.7 pF Chip Capacitor
33 pF Chip Capacitors
10 F Chip Capacitors
3.9 pF Chip Capacitor
0.5 pF Chip Capacitor
RF Power LDMOS Transistor
10 Chip Resistor
ATC100B3R9JT500XT
ATC100B1R7JT500XT
ATC100B2R7JT500XT
ATC100B330JT500XT
GRM32ER61H106KA12L
ATC100B3R9JT500XT
ATC100B0R5JT500XT
AFT27S010NT1
ATC
C3
ATC
C4
ATC
C5, C10, C11, C12, C13
ATC
C6, C14, C15, C16, C17
Murata
ATC
C7
C8
ATC
Q1
R1
Freescale
Vishay
MTL
CWCR120610R0JNEA
D53406
PCB
Rogers RO4350B, 0.020, = 3.66
r
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
17
TYPICAL CHARACTERISTICS — 728--768 MHz
27
24.7
V
DQ
= 28 Vdc, P = 1.26 W (Avg.)
out
DD
26
24.6
I
= 80 mA, Single--Carrier W--CDMA
25
24.5
24.4
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
D
24
24.3
23
G
ps
-- 11
-- 1 2
-- 1 3
-- 1 4
-- 1 5
-- 1 6
-- 4 0
-- 4 1
-- 4 2
-- 4 3
-- 4 4
-- 4 5
0
24.2
24.1
IRL
-- 0 . 2
-- 0 . 4
-- 0 . 6
-- 0 . 8
-- 1
24
23.9
23.8
23.7
ACPR
PARC
710
720
730
740
750
760
770
780
790
f, FREQUENCY (MHz)
Figure 37. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
28
26
60
-- 1 0
-- 2 0
768 MHz
748 MHz
V
= 28 Vdc, I = 80 mA, Single--Carrier
DQ
DD
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
50
40
30
20
10
0
728 MHz
24
22
-- 3 0
-- 4 0
G
ps
748 MHz
768 MHz
728 MHz
748 MHz
ACPR
20
-- 5 0
-- 6 0
-- 7 0
768 MHz
728 MHz
18
16
D
1
0.3
10
20
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 38. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
28
0
V
P
= 28 Vdc
= 0 dBm
= 80 mA
DD
-- 2
26
24
22
in
I
DQ
Gain
-- 4
-- 6
-- 8
20
18
-- 1 0
-- 1 2
IRL
16
550
650
700
750
800
850
900
950
600
f, FREQUENCY (MHz)
Figure 39. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
18
V
= 28 Vdc, I = 81 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Output Power
P1dB
(1)
Z
load
D
AM/PM
f
Z
Z
in
source
()
(%)
59.8
60.2
60.1
()
Gain (dB)
27.2
(dBm)
41.3
(W)
14
(MHz)
()
()
728
748
768
2.05 + j12.1
2.04 + j11.1
1.94 + j10.5
1.72 - j11.7
1.69 - j11.2
1.69 - j10.8
15.1 + j6.07
14.6 + j5.90
14.6 + j5.49
-15
-15
-14
27.0
41.5
14
26.7
41.5
14
Max Output Power
P3dB
(2)
Z
D
AM/PM
f
Z
Z
in
load
source
()
(%)
61.9
61.7
61.7
()
Gain (dB)
24.7
(dBm)
42.3
(W)
17
(MHz)
()
()
728
748
768
2.05 + j12.1
2.04 + j11.1
1.94 + j10.5
1.53 - j11.7
1.50 - j11.3
1.46 - j10.9
16.1 + j4.43
15.1 + j4.52
14.8 + j4.54
-17
-17
-16
24.6
42.4
17
24.5
42.4
17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Figure 40. Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I = 81 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Drain Efficiency
P1dB
(1)
Z
load
D
AM/PM
f
Z
Z
in
source
()
(%)
68.4
68.5
69.2
()
Gain (dB)
27.9
(dBm)
39.7
(W)
9
(MHz)
()
()
728
748
768
2.05 + j12.1
2.04 + j11.1
1.94 + j10.5
1.97 - j10.7
1.81 - j9.83
1.83 - j9.69
18.5 + j16.4
16.7 + j20.1
17.4 + j18.0
-13
-14
-14
28.6
38.9
8
28.3
39.5
9
Max Drain Efficiency
P3dB
(2)
Z
D
AM/PM
f
Z
Z
in
load
source
()
(%)
73.7
77.4
72.8
()
Gain (dB)
26.1
(dBm)
40.3
(W)
11
(MHz)
()
()
728
748
768
2.05 + j12.1
2.04 + j11.1
1.94 + j10.5
1.69 - j10.8
1.58 - j10.4
1.51 - j9.87
18.3 + j18.6
17.5 + j17.5
15.8 + j19.1
-14
-14
-15
26.4
40.5
11
26.8
40.0
10
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Figure 41. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
19
P1dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz
25
20
15
10
5
25
66
37.5
38
38.5
39
E
E
20
15
10
5
39.5
68
40
40.5
66
41
64
P
P
62
58
60
56
0
0
54
40.5
40
52
-- 5
-- 5
12
14
12
14
10
16
18
20
22
24
10
16
18
20
22
24
REAL ()
REAL ()
Figure 42. P1dB Load Pull Output Power Contours (dBm)
Figure 43. P1dB Load Pull Efficiency Contours (%)
25
25
-- 1 0
-- 1 2
30.5
20
15
10
5
E
20
15
10
5
E
29.5
29
30
-- 2 2
28.5
28
-- 1 8
-- 1 6
-- 2 0
27.5
27
P
P
26.5
-- 1 4
0
0
-- 5
-- 5
12
14
12
14
10
16
18
REAL ()
20
22
24
10
16
18
20
22
24
REAL ()
Figure 45. P1dB Load Pull AM/PM Contours ()
Figure 44. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
20
P3dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz
25
20
15
10
5
25
68
38.5
39
39.5
40
20
15
10
5
40.5
76
E
70
E
74
72
41
41.5
68
66
42
64
P
P
62
60
0
0
41.5
41
-- 5
-- 5
12
14
12
14
10
16
18
20
22
24
10
16
18
20
22
24
REAL ()
REAL ()
Figure 46. P3dB Load Pull Output Power Contours (dBm)
Figure 47. P3dB Load Pull Efficiency Contours (%)
25
28
25
-- 8
27.5
26.5
27
20
15
10
5
20
15
10
5
E
E
-- 1 0
26
-- 2 4
-- 1 2
-- 1 4
-- 2 0
25.5
25
-- 2 2
24.5
P
P
-- 1 8
-- 1 6
24
0
0
-- 5
-- 5
12
14
12
14
10
16
18
REAL ()
20
22
24
10
16
18
20
22
24
REAL ()
Figure 49. P3dB Load Pull AM/PM Contours ()
Figure 48. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
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0.28
7.11
0.165
4.91
0.089
2.26
0.155
3.94
Solder pad with thermal via
structure. All dimensions in mm.
0.085
2.16
Figure 50. PCB Pad Layout for PLD--1.5W
AFS10
N( )B
YYWW
Figure 51. Product Marking
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RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
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RF Device Data
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2013
Initial Release of Data Sheet
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E 2013 Freescale Semiconductor, Inc.
Document Number: AFT27S010N
Rev. 0, 11/2013
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