ATC600F0R6BT250XT [NXP]
RF Power GaN Transistor;型号: | ATC600F0R6BT250XT |
厂家: | NXP |
描述: | RF Power GaN Transistor |
文件: | 总8页 (文件大小:185K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Document Number: A3G20S250--01S
Rev. 0, 09/2018
NXP Semiconductors
Technical Data
RF Power GaN Transistor
This 45 W RF power GaN transistor is designed for cellular base station
applications covering the frequency range of 1800 to 2200 MHz.
A3G20S250--01SR3
This part is characterized and performance is guaranteed for applications
operating in the 1800 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
1800–2200 MHz, 45 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
2000 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQ = 250 mA, Pout = 45 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
1805 MHz
1990 MHz
2170 MHz
(dB)
17.6
17.9
18.2
(%)
34.8
37.2
37.0
6.9
7.0
6.9
–35.1
–34.4
–34.1
–10
–8
NI--400S--2SA
–10
Features
High terminal impedances for optimal broadband performance
Designed for digital predistortion error correction systems
Optimized for Doherty applications
RF /V
in GS
RF /V
out DS
2
1
(Top View)
Figure 1. Pin Connections
2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
DSS
V
–8, 0
GS
DD
V
0 to +55
24
Maximum Forward Gate Current @ T = 25C
I
GMAX
C
Storage Temperature Range
T
stg
–65 to +150
–55 to +150
–55 to +225
275
Case Operating Temperature Range
Operating Junction Temperature Range
T
C
C
T
J
C
(1)
Absolute Maximum Channel Temperature
T
MAX
C
Table 2. Thermal Characteristics
Characteristic
Symbol
(IR)
Value
Unit
(2)
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
R
1.0
C/W
JC
Case Temperature 76C, P = 78 W
D
(3)
Thermal Resistance by Finite Element Analysis, Channel--to--Case
R
CHC
1.32
C/W
Case Temperature 80C, P = 78 W
(FEA)
D
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C3
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
V
150
—
—
Vdc
(BR)DSS
(V = –8 Vdc, I = 24 mAdc)
GS
D
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 24 mAdc)
V
V
–3.8
–3.6
–7.5
–3.0
–2.9
—
–2.3
–2.6
—
Vdc
Vdc
GS(th)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 250 mAdc, Measured in Functional Test)
GS(Q)
DD
D
Gate--Source Leakage Current
(V = 0 Vdc, V = –5 Vdc)
I
mAdc
GSS
DS
GS
1. Reliability tests were conducted at 225C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. R
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by
CHC
[A + B/(T + 273)]
the expression MTTF (hours) = 10
, where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8260.
(continued)
A3G20S250--01SR3
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In NXP Test Fixture, 50 ohm system) V = 48 Vdc, I = 250 mA, P = 45 W Avg., f = 2170 MHz, Single--Carrier
DD
DQ
out
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
G
16.5
33.2
6.3
—
18.2
37.0
6.9
19.5
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
–34.1
–10
–32.0
–5
—
Load Mismatch (In NXP Test Fixture, 50 ohm system) I = 250 mA, f = 1990 MHz, 12 sec(on), 10% Duty Cycle
DQ
VSWR 10:1 at 55 Vdc, 281 W Pulsed CW Output Power
(3 dB Input Overdrive from 229 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In NXP Test Fixture, 50 ohm system) V = 48 Vdc, I = 250 mA, 1805–2170 MHz Bandwidth
DD
DQ
(2)
P
@ 3 dB Compression Point
P3dB
—
—
240
–12
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–2170 MHz bandwidth)
VBW Resonance Point
VBW
—
170
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 365 MHz Bandwidth @ P = 45 W Avg.
G
—
—
0.5
—
—
dB
out
F
Gain Variation over Temperature
G
0.013
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.004
—
dB/C
(–40C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
A3G20S250--01SR3
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
NI--400S--2SA
1. Part internally input matched.
2. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set V to –5 V
GS
2. Turn on V to nominal supply voltage (48 V)
DS
3. Increase V until I current is attained
GS
DS
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce V down to –5 V
GS
3. Reduce V down to 0 V (Adequate time must be allowed
DS
for V to reduce to 0 V to prevent severe damage to device.)
DS
4. Turn off V
GS
A3G20S250--01SR3
RF Device Data
NXP Semiconductors
3
V
GG
V
DD
C11
C10
C5
C9
C4
R2
R1
C2
C1
C8
C6
C3
C7
cut out
area
A3G20S250-01S
Rev. 0
D102278
aaa-031427
Figure 2. A3G20S250--01SR3 Test Circuit Component Layout
Table 6. A3G20S250--01SR3 Test Circuit Component Designations and Values
Part
C1, C2, C4, C8, C9
C3
Description
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Manufacturer
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1.8 pF Chip Capacitor
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C5, C10
C6
10 F Chip Capacitor
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ATC600F0R6BT250XT
ATC600F0R3BT250XT
MCGPR100V227M16X26
CRCW12066R20FKEA
CRCW12063R30FKEA
D102278
TDK
0.6 pF Chip Capacitor
ATC
C7
0.3 pF Chip Capacitor
ATC
C11
R1
220 F, 100 V Electrolytic Capacitor
6.2 , 1/4 W Chip Resistor
3.3 , 1/4 W Chip Resistor
Multicomp
Vishay
Vishay
MTL
R2
PCB
Rogers RO4350B, 0.020, = 3.66
r
A3G20S250--01SR3
RF Device Data
NXP Semiconductors
4
PACKAGE DIMENSIONS
A3G20S250--01SR3
RF Device Data
NXP Semiconductors
5
A3G20S250--01SR3
RF Device Data
NXP Semiconductors
6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2018
Initial release of data sheet
A3G20S250--01SR3
RF Device Data
NXP Semiconductors
7
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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including without limitation consequential or incidental damages. “Typical” parameters
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E 2018 NXP B.V.
Document Number: A3G20S250--01S
Rev. 0, 09/2018
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