BA278 [NXP]
Band-switching diode; 带开关二极管
| 型号： | BA278 |
| 厂家： | 
NXP |
| 描述： | Band-switching diode |
| 文件： | 总5页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BA278
Band-switching diode
Preliminary specification
2001 Jan 15
Philips Semiconductors
Preliminary specification
Band-switching diode
BA278
FEATURES
PINNING
• Small plastic SMD package
PIN
DESCRIPTION
• Continuous reverse voltage: max. 35 V
• Continuous forward current: max. 100 mA
• Low diode capacitance: max. 1.2 pF
• Low diode forward resistance: max. 0.7 Ω.
1
2
cathode
anode
APPLICATIONS
handbook, halfp
2
1
• Low loss band switching in VHF television tuners.
• Surface mount band-switching circuits.
Top view
MBK258
Marking code:
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523V SMD package.
Fig.1 Simplified outline (SOD523V)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
IF
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
−
−
35
100
V
mA
mW
°C
Ptot
Tstg
Tj
Ts = 90 °C
−
715
−65
−65
+150
+150
junction temperature
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IR
IF = 10 mA
VR = 25 V
1
50
1
V
reverse current
nA
µA
pF
Ω
VR = 20 V; Tamb = 75 °C
Cd
rD
diode capacitance
f = 1 MHz; VR = 6 V; note 1; see Fig.2
1.2
0.7
diode forward resistance
IF = 2 mA; f = 100 MHz; note 1; see Fig.3
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering-point
85
2001 Jan 15
2
Philips Semiconductors
Preliminary specification
Band-switching diode
BA278
GRAPHICAL DATA
MGL433
MGL432
10
2.5
handbook, halfpage
handbook, halfpage
r
D
C
d
(pF)
(Ω)
2.0
1.5
1.0
1
0.5
0
−1
10
2
−1
1
10
10
10
1
10
V
(V)
I (mA)
F
R
f = 1 MHz; Tj = 25 °C.
f = 100 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse
voltage; typical values.
Fig.3 Diode forward resistance as a function of
forward current; typical values.
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523V
Package under
development
Philips Semiconductors reserves the
A
right to make changes without notice.
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.34
0.26
0.17
0.11
0.65
0.58
1.25
1.15
0.85
0.75
1.65
1.55
mm
0.1
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
00-12-07
SOD523V
SC-79
2001 Jan 15
3
Philips Semiconductors
Preliminary specification
Band-switching diode
BA278
DATA SHEET STATUS
PRODUCT
STATUS
DATA SHEET STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Jan 15
4
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71
SCA
© Philips Electronics N.V.
2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/ed/pp5
Date of release: 2001 Jan 15
Document order number: 9397 750 07927
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