BA314 [NXP]
Low-voltage stabistor; 低电压限压半导体二极管
| 型号： | BA314 |
| 厂家： | 
NXP |
| 描述： | Low-voltage stabistor |
| 文件： | 总5页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BA314
Low-voltage stabistor
1996 Mar 21
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
Low-voltage stabistor
BA314
FEATURES
DESCRIPTION
• Low-voltage stabilization
Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package.
• Forward voltage range:
610 mV to 940 mV
• Total power dissipation:
max. 400 mW.
handbook, halfpage
k
a
APPLICATIONS
• Low-voltage stabilization e.g.
MAM246
– Bias stabilizer in class-B output
stages
Diodes are type branded.
– Clipping
– Clamping
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
– Meter protection.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
CONDITIONS
MIN.
−
MAX.
5
UNIT
VR
IF
V
−
200
400
+200
200
mA
mW
°C
Ptot
Tstg
Tj
Tamb = 25 °C
−
−65
−
junction temperature
°C
1996 Mar 21
2
Philips Semiconductors
Product specification
Low-voltage stabistor
BA314
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
see Fig.2
MIN.
TYP.
MAX.
UNIT
VF
IF = 0.1 mA
IF = 1 mA
610
680
730
750
850
−
−
−
690
760
810
830
940
5
mV
mV
mV
mV
mV
µA
IF = 5 mA
−
IF = 10 mA
IF = 100 mA
−
−
IR
reverse current
VR = 4 V
−
rdif
differential resistance
IF = 1 mA; f = 1 kHz
IF = 10 mA; f = 1 kHz
IF = 1 mA
−
30
3.5
−1.8
−
−
Ω
−
6
Ω
SF
Cd
temperature coefficient
diode capacitance
−
−
mV/K
pF
VR = 0 V; f = 1 MHz
−
140
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
K/W
thermal resistance from junction to tie-point 8 mm from the body
thermal resistance from junction to ambient lead length 10 mm
Rth j-a
380
1996 Mar 21
3
Philips Semiconductors
Product specification
Low-voltage stabistor
BA314
GRAPHICAL DATA
MBG519
2
10
handbook, halfpage
I
F
(mA)
(1)
(2)
10
1
−1
10
0.2
0.4
0.6
0.8
1.0
1.2
(V)
V
F
Tj = 25 °C.
(1) Minimum values.
(2) Maximum values.
Fig.2 Forward current as a function of
forward voltage.
1996 Mar 21
4
Philips Semiconductors
Product specification
Low-voltage stabistor
BA314
PACKAGE OUTLINE
a
0.56
max
1.85
max
4.25
max
MLA428 - 1
25.4 min
25.4 min
Dimensions in mm.
Diodes are type branded.
Fig.3 SOD27 (DO-35).
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 21
5
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