BA318 [NXP]
High-speed diodes; 高速二极管
| 型号： | BA318 |
| 厂家： | 
NXP |
| 描述： | High-speed diodes |
| 文件： | 总7页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BA316; BA317; BA318
High-speed diodes
Product specification
1996 Sep 03
Supersedes data of April 1996
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage: 10 V,
30 V, 50 V
handbook, halfpage
k
a
• Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
MAM246
• Repetitive peak forward current:
max. 225 mA.
The diodes are type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
−
−
−
BA316
15
40
60
V
V
V
BA317
BA318
VR
continuous reverse voltage
BA316
−
−
−
−
−
10
30
V
V
V
BA317
BA318
50
IF
continuous forward current
repetitive peak forward current
see Fig.2; note 1
100
225
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
4
1
A
A
−
0.5
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
350
+200
200
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 1 mA
−
−
−
700
850
mV
IF = 10 mA
mV
mV
IF = 100 mA
1100
IR
reverse current
BA316
see Fig.5
VR = 10 V
−
−
−
−
−
−
−
−
−
−
200
100
50
nA
µA
nA
nA
µA
nA
nA
µA
pF
ns
VR = 10 V; Tj = 150 °C
VR = 10 V
BA317
BA318
VR = 30 V
200
100
50
VR = 30 V; Tj = 150 °C
VR = 30 V
VR = 50 V
200
100
2
VR = 50 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
4
measured at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
VALUE
240
UNIT
K/W
K/W
Rth j-a
500
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
GRAPHICAL DATA
MBG452
MBG465
200
300
handbook, halfpage
handbook, halfpage
I
F
(mA)
I
F
(mA)
200
(1)
(2)
(3)
100
100
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
MGD008
MGD004
3
10
1.2
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.0
2
10
10
1
0.8
0.6
−1
10
−2
10
0.4
0
0
100
200
o
10
20
T ( C)
j
V
(V)
R
VR = VRmax
.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
5
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
1996 Sep 03
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
PACKAGE OUTLINE
h
0.56
max
1.85
max
4.25
max
MLA428 - 1
25.4 min
25.4 min
Dimensions in mm.
Fig.9 SOD27 (DO-35).
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03
7
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