BA484T/R [NXP]

DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode;
BA484T/R
型号: BA484T/R
厂家: NXP    NXP
描述:

DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode

二极管
文件: 总5页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
k, halfpage  
BA482; BA483; BA484  
Band-switching diodes  
1996 Apr 17  
Product specification  
Supersedes data of January 1982  
Philips Semiconductors  
Product specification  
Band-switching diodes  
BA482; BA483; BA484  
FEATURES  
DESCRIPTION  
Continuous reverse voltage:  
max. 35 V  
Planar high performance band-switching diode in a hermetically sealed glass  
SOD68 (DO-34) package.  
Continuous forward current:  
max. 100 mA  
Low diode capacitance:  
max. 1.0 to 1.6 pF  
k
a
handbook, halfpage  
Low diode forward resistance:  
max. 0.7 to 1.2 .  
MAM156  
The diodes are type branded.  
APPLICATION  
Fig.1 Simplified outline (SOD68; DO-34) and symbol.  
VHF television tuners.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
MIN.  
MAX.  
35  
UNIT  
VR  
IF  
continuous reverse voltage  
continuous forward current  
storage temperature  
V
100  
mA  
°C  
Tstg  
Tj  
65  
+150  
150  
junction temperature  
°C  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
TYP.  
MAX.  
UNIT  
VF  
IR  
IF = 100 mA; see Fig.2  
see Fig.3  
1.2  
V
reverse current  
VR = 20V  
100  
1
nA  
VR = 20 V; Tamb = 75 °C  
f = 1 to 100 MHz; VR = 3 V; see Fig.4  
µA  
Cd  
diode capacitance  
BA482  
0.8  
0.7  
1.0  
1.2  
1.0  
1.6  
pF  
pF  
pF  
BA483  
BA484  
rD  
diode forward resistance  
BA482  
IF = 3 mA; f = 200 MHz; see Fig.5  
0.6  
0.8  
0.8  
0.7  
1.2  
1.2  
BA483  
BA484  
1996 Apr 17  
2
Philips Semiconductors  
Product specification  
Band-switching diodes  
BA482; BA483; BA484  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
lead length 10 mm  
VALUE  
300  
UNIT  
K/W  
K/W  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
lead length 10 mm; note 1  
500  
Note  
1. Device mounted on a FR4 printed-circuit board without metallization pad.  
GRAPHICAL DATA  
MBG304  
MBG303  
5
100  
10  
handbook, halfpage  
handbook, halfpage  
I
R
(nA)  
(1)  
(2)  
(3)  
4
I
10  
F
(mA)  
3
10  
50  
2
10  
10  
0
0
1
0
0.5  
1
1.5  
50  
100  
150  
o
( C)  
V
(V)  
T
j
F
(1) Tj = 75 °C; typical values.  
(2) Tj = 25 °C; typical values.  
(3) Tj = 25 °C; maximum values.  
VR = 20 V.  
Solid line: maximum values.  
Dotted line: typical values.  
Fig.2 Forward current as a function of  
forward voltage.  
Fig.3 Reverse current as a function of  
junction temperature.  
1996 Apr 17  
3
Philips Semiconductors  
Product specification  
Band-switching diodes  
BA482; BA483; BA484  
MBG306  
MBG305  
2
1.5  
handbook, halfpage  
handbook, halfpage  
C
d
(pF)  
r
D
()  
1
BA484  
BA482  
1
0.5  
BA483  
BA483/484  
BA482  
0
1
0
10  
2
1  
2
10  
10  
1
10  
10  
I
(mA)  
V
(V)  
F
R
f = 1 to 100 MHz; Tj = 25 °C.  
f = 200 MHz; Tj = 25 °C.  
Fig.4 Diode capacitance as a function of reverse  
voltage; typical values.  
Fig.5 Diode forward resistance as a function of  
forward current; typical values.  
1996 Apr 17  
4
Philips Semiconductors  
Product specification  
Band-switching diodes  
BA482; BA483; BA484  
PACKAGE OUTLINE  
0.55  
max  
1.6  
max  
3.04  
max  
25.4 min  
25.4 min  
MSA212 - 1  
Dimensions in mm.  
Fig.6 SOD68; DO-34.  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Apr 17  
5

相关型号:

BA489

Silicon PIN Diode
INFINEON

BA4900

System power supply for car stereos
ROHM

BA4903ST-V5

レギュレータLSI
ETC

BA4904A-V11

レギュレータLSI
ETC

BA4905-V3

Regulator
ETC

BA4906-V2

レギュレータLSI
ETC

BA4907FP

Silicon Monolithic Integrated Circuit
ROHM

BA4908

System Regulator for Car Stereo
ROHM

BA491-10

SILICON GENERAL PURPOSE 3.0 AMP DIODES
EDAL

BA491-100

SILICON GENERAL PURPOSE 3.0 AMP DIODES
EDAL

BA491-120

SILICON GENERAL PURPOSE 3.0 AMP DIODES
EDAL

BA491-150

SILICON GENERAL PURPOSE 3.0 AMP DIODES
EDAL