BA592 [NXP]
Band-switching diode; 带开关二极管
| 型号： | BA592 |
| 厂家： | 
NXP |
| 描述： | Band-switching diode |
| 文件： | 总8页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
, halfpage
BA592
Band-switching diode
1998 May 07
Preliminary specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
FEATURES
PINNING SOD323
PIN
• Small plastic SMD package
• Low diode capacitance
• Low diode forward resistance
• Small inductance.
DESCRIPTION
1
2
cathode
anode
APPLICATIONS
ndbook, halfpage
1
2
• Low loss band-switching in VHF television tuners
• Surface mount band-switching circuits.
Top view
DESCRIPTION
Marking code: A2.
Planar, high performance band-switch diode in a small
SMD plastic package (SOD323).
Fig.1 Simplified outline.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
CONDITIONS.
MIN.
MAX.
35
UNIT
VR
IF
−
−
−
V
100
mA
mW
°C
Ptot
Tstg
Tj
TS = 90 °C
500
−65
−65
+150
+150
junction temperature
°C
1998 May 07
2
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA
MIN.
TYP. MAX. UNIT
−
−
1
V
IR
reverse current
VR = 20 V
−
−
20
1.4
1.1
0.7
0.5
−
nA
pF
pF
Ω
Cd
diode capacitance
VR = 1 V; f = 1 MHz; note 1
VR = 3 V; f = 1 MHz; note 1
IF = 3 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
VR = 1 V; f = 100 MHz; note 1
−
0.92
0.85
0.45
0.36
100
2
0.6
−
rD
diode forward resistance
−
Ω
1/gp
LS
reverse resistance
series inductance
−
kΩ
nH
−
−
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
120
UNIT
Rth j-s
thermal resistance from junction to soldering point
K/W
GRAPHICAL DATA
10
rD
2
Cd
(pF)
Ω
(
)
1.6
1.2
0.8
0.4
0
1
0.1
0.1
1
10
100
0
10
20
30
IF (mA)
V
R (V)
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
1998 May 07
3
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
PACKAGE OUTLINE
SOD323
Plastic surface mounted package; 2 leads
Q
A
A
1
c
L
p
v
M
A
H
E
A
D
1
2
b
E
p
(1)
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max.
UNIT
A
b
c
D
E
H
L
p
Q
v
p
E
+ 0.05 0.40
− 0.05 0.25
0.25
0.10
1.1
0.8
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
mm
0.2
Note
1. The marking band indicate the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOD323
97-12-10
1998 May 07
4
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 May 07
5
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
NOTES
1998 May 07
6
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
NOTES
1998 May 07
7
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© Philips Electronics N.V. 1998
SCA59
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Printed in The Netherlands
115104/00/01/pp8
Date of release: 1998 May 07
Document order number: 9397 750 03818
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