BAP51-02,115 [NXP]
BAP51-02 - General purpose PIN diode SOD 2-Pin;
| 型号： | BAP51-02,115 |
| 厂家： | 
NXP |
| 描述： | BAP51-02 - General purpose PIN diode SOD 2-Pin 测试 光电二极管 |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAP51-02
General purpose PIN diode
Rev. 03 — 2 January 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
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sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
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NXP Semiconductors
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-02
FEATURES
PINNING
• Low diode capacitance
PIN
DESCRIPTION
• Low diode forward resistance.
1
2
cathode
anode
APPLICATIONS
• General RF applications.
handbook, halfpage
1
2
DESCRIPTION
Top view
MAM405
General purpose PIN diode in a SOD523 ultra small SMD
plastic package.
Marking code: K1.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
PARAMETER
CONDITIONS
MIN. MAX. UNIT
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
−
60
V
IF
−
50
mA
mW
Ptot
Tstg
Tj
Ts = 90 °C
−
715
−65
−65
+150 °C
+150 °C
junction temperature
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP. MAX. UNIT
IF = 50 mA
IR = 10 µA
VR = 50 V
−
0.95
−
1.1
−
V
VR
IR
reverse voltage
reverse current
diode capacitance
50
−
V
−
100
−
nA
pF
pF
pF
Ω
Cd
VR = 0; f = 1 MHz
−
0.4
0.3
0.2
5.5
3.6
1.5
VR = 1 V; f = 1 MHz
−
0.55
0.35
9
VR = 5 V; f = 1 MHz
−
rD
diode forward resistance
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
−
−
6.5
2.5
Ω
−
Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
85
UNIT
Rth j-s
thermal resistance from junction to soldering point
K/W
Rev. 03 - 2 January 2008
2 of 6
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-02
GRAPHICAL DATA
MGS322
MGS323
10
500
handbook, halfpage
handbook, halfpage
C
d
r
(fF)
400
D
(Ω)
5
300
200
100
2
1
10
0
0
−1
4
8
12
16
20
1
10
I
(mA)
V
(V)
F
R
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
MGT264
MGT265
0
0
handbook, halfpage
2
handbook, halfpage
2
|s
|
|s
|
21
(dB)
−0.5
21
(dB)
−5
(1) (2) (3)
−1
−1.5
−2
−10
−15
−20
−25
−2.5
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
f (GHz)
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA.
(3) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and biased via the
analyzer Tee network.
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Tamb = 25 °C.
Fig.4 Insertion loss (|s21|2) of the diode as a
Fig.5 Isolation (|s21|2) of the diode as a function of
function of frequency; typical values.
frequency; typical values.
Rev. 03 - 2 January 2008
3 of 6
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-02
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.34
0.26
0.17
0.11
0.65
0.58
1.25
1.15
0.85
0.75
1.65
1.55
mm
0.1
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
02-12-13
06-03-16
SOD523
SC-79
Rev. 03 - 2 January 2008
4 of 6
BAP51-02
NXP Semiconductors
General purpose PIN diode
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 03 - 2 January 2008
5 of 6
BAP51-02
NXP Semiconductors
General purpose PIN diode
Revision history
Revision history
Document ID
BAP51-02_N_3
Modifications:
Release date
20080102
Data sheet status
Change notice
Supersedes
Product data sheet
-
BAP51-02_2
• Package outline drawing on page 4 changed
BAP51-02_2
(9397 750 07151)
20000706
Product specification
-
-
BAP51-02_N_1
-
BAP51-02_N_1
19990628
Preliminary specification
(9397 750 06152)
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 January 2008
Document identifier: BAP51-02_N_3
相关型号：
BAP51-03
Low diode capacitance Low diode forward resistance. continuous reverse voltage VR 50 V
TYSEMI
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