BAP63-03T/R [NXP]

DIODE 50 V, SILICON, PIN DIODE, PLASTIC, SMD, SC-76, 2 PIN, PIN Diode;
BAP63-03T/R
型号: BAP63-03T/R
厂家: NXP    NXP
描述:

DIODE 50 V, SILICON, PIN DIODE, PLASTIC, SMD, SC-76, 2 PIN, PIN Diode

衰减器 开关 光电二极管
文件: 总7页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BAP63-03  
Silicon PIN diode  
Product specification  
2004 Feb 11  
Supersedes data of 2001 May 18  
Philips Semiconductors  
Product specification  
Silicon PIN diode  
BAP63-03  
FEATURES  
PINNING  
High speed switching for RF signals  
Low diode capacitance  
PIN  
DESCRIPTION  
1
2
cathode  
anode  
Low diode forward resistance  
Very low series inductance  
For applications up to 3 GHz.  
APPLICATIONS  
1
2
RF attenuators and switches.  
sym006  
Top view  
DESCRIPTION  
Planar PIN diode in a SOD323 small SMD plastic package.  
Marking code: D2.  
The marking bar indicates the cathode.  
Fig.1 Simplified outline (SOD323) and symbol.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
DESCRIPTION  
plastic surface mounted package; 2 leads  
NUMBER  
NAME  
VERSION  
BAP63-03  
SOD323  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VR  
IF  
continuous reverse voltage  
continuous forward current  
total power dissipation  
storage temperature  
50  
V
100  
500  
+150  
+150  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
Ts 90 °C  
65  
65  
junction temperature  
°C  
2004 Feb 11  
2
Philips Semiconductors  
Product specification  
Silicon PIN diode  
BAP63-03  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
VF  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 50 mA  
TYP.  
0.95  
MAX.  
1.1  
UNIT  
V
IR  
reverse leakage current  
diode capacitance  
VR = 35 V  
10  
nA  
pF  
pF  
pF  
Cd  
VR = 0; f = 1 MHz  
VR = 1 V; f = 1 MHz  
VR = 20 V; f = 1 MHz  
0.4  
0.35  
0.27  
0.32  
3.5  
3
rD  
diode forward resistance  
IF = 0.5 mA; f = 100 MHz; note 1 2.5  
IF = 1 mA; f = 100 MHz; note 1  
IF = 10 mA; f = 100 MHz; note 1  
1.95  
1.17  
1.8  
1.5  
IF = 100 mA; f = 100 MHz; note 1 0.9  
2
2
2
2
2
|s21  
|s21  
|s21  
|s21  
|s21  
|
|
|
|
|
isolation  
VR = 0; f = 900 MHz  
15.4  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
ns  
VR = 0; f = 1800 MHz  
10.1  
7.8  
VR = 0; f = 2450 MHz  
insertion loss  
insertion loss  
insertion loss  
insertion loss  
IF = 0.5 mA; f = 900 MHz  
IF = 0.5 mA; f = 1800 MHz  
IF = 0.5 mA; f = 2450 MHz  
IF = 1 mA; f = 900 MHz  
IF = 1 mA; f = 1800 MHz  
IF = 1 mA; f = 2450 MHz  
IF = 10 mA; f = 900 MHz  
IF = 10 mA; f = 1800 MHz  
IF = 10 mA; f = 2450 MHz  
IF = 100 mA; f = 900 MHz  
IF = 100 mA; f = 1800 MHz  
IF = 100 mA; f = 2450 MHz  
0.21  
0.28  
0.38  
0.18  
0.26  
0.35  
0.13  
0.20  
0.30  
0.10  
0.18  
0.28  
τL  
charge carrier life time  
series inductance  
when switched from IF = 10 mA to 310  
IR = 6 mA; RL = 100 ;  
measured at IR = 3 mA  
LS  
1.5  
nH  
Note  
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth(j-s)  
thermal resistance from junction to soldering point  
120  
K/W  
2004 Feb 11  
3
 
Philips Semiconductors  
Product specification  
Silicon PIN diode  
BAP63-03  
GRAPHICAL DATA  
MGW126  
MGW130  
10  
500  
handbook, halfpage  
handbook, halfpage  
C
d
r
D
(fF)  
400  
()  
300  
200  
100  
1
1  
10  
0
0
1  
2
10  
1
10  
10  
4
8
12  
16  
20  
I
(mA)  
F
V
(V)  
R
Tj = 25 °C; f = 100 MHz.  
Tj = 25 °C; f = 1 MHz.  
Fig.2 Forward resistance as a function of forward  
current; typical values.  
Fig.3 Diode capacitance as a function of reverse  
voltage; typical values.  
MGW131  
MGW132  
0
0
handbook, halfpage  
handbook, halfpage  
2
|s  
|
2
21  
(dB)  
0.1  
|s  
|
21  
(dB)  
(1)  
(2)  
10  
(3)  
(4)  
0.2  
0.3  
0.4  
0.5  
20  
30  
40  
0
1
2
3
0
1
2
3
f (GHz)  
f (GHz)  
(1) IF = 100 mA.  
(2) IF = 10 mA.  
(3) IF = 1 mA.  
(4) IF = 0.5 mA.  
Diode inserted in series with a 50 stripline circuit and biased via the  
analyzer Tee network.  
Diode zero biased and inserted in series with a 50 stripline circuit.  
Tamb = 25 °C.  
Tamb = 25 °C.  
Fig.4 Insertion loss (|s21|2) of the diode in on-state  
Fig.5 Isolation (|s21|2) of the diode in off-state as a  
as a function of frequency; typical values.  
function of frequency; typical values.  
2004 Feb 11  
4
Philips Semiconductors  
Product specification  
Silicon PIN diode  
BAP63-03  
PACKAGE OUTLINE  
Plastic surface mounted package; 2 leads  
SOD323  
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)  
c
L
p
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
mm  
b
c
D
E
H
L
p
Q
v
A
p
D
max  
1.1  
0.8  
0.40 0.25  
0.25 0.10  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45 0.25  
0.15 0.15  
0.05  
0.2  
Note  
1. The marking bar indicates the cathode  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
99-09-13  
03-12-17  
SOD323  
SC-76  
2004 Feb 11  
5
Philips Semiconductors  
Product specification  
Silicon PIN diode  
BAP63-03  
DATA SHEET STATUS  
DATA SHEET  
LEVEL  
PRODUCT  
STATUS(2)(3)  
DEFINITION  
STATUS(1)  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Feb 11  
6
 
 
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R77/04/pp7  
Date of release: 2004 Feb 11  
Document order number: 9397 750 12634  

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