BAP64-02 [NXP]
Silicon PIN diode; 硅PIN二极管型号: | BAP64-02 |
厂家: | NXP |
描述: | Silicon PIN diode |
文件: | 总8页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAP64-02
Silicon PIN diode
Preliminary specification
1999 Sep 21
Supersedes data of 1999 Jun 16
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
FEATURES
PINNING
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
PIN
DESCRIPTION
1
2
cathode
anode
• Low diode forward resistance
• Very low series inductance
• For applications up to 3 GHz.
handbook, halfpage
1
2
APPLICATIONS
Top view
MAM405
• RF attenuators and switches.
Marking code: S.
DESCRIPTION
Fig.1 Simplified outline (SOD523) and symbol.
Planar PIN diode in a SOD523 ultra small plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
CONDITIONS
MIN.
MAX.
175
UNIT
VR
IF
−
−
−
V
100
mA
mW
°C
Ptot
Tstg
Tj
Ts = 90 °C
715
−65
−65
+150
+150
junction temperature
°C
1999 Sep 21
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
IF = 50 mA
MIN.
TYP. MAX. UNIT
−
0.95
−
1.1
10
1
V
IR
reverse leakage current
VR =175 V
−
−
−
−
−
−
−
−
−
−
µA
µA
pF
pF
pF
Ω
VR = 20 V
−
Cd
diode capacitance
VR = 0; f = 1 MHz
0.48
0.35
0.23
20
−
VR = 1 V; f = 1 MHz
−
VR = 20 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
IF = 100 mA; f = 100 MHz; note 1
0.35
40
20
3.8
1.35
−
rD
diode forward resistance
10
Ω
2
Ω
0.7
1.55
Ω
τL
charge carrier life time
series inductance
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
µs
LS
−
0.6
−
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
85
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point
1999 Sep 21
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
GRAPHICAL DATA
MGL857
MGL856
2
10
500
handbook, halfpage
handbook, halfpage
C
d
r
(fF)
400
D
(Ω)
10
300
200
100
1
−1
10
0
0
−1
2
10
1
10
10
4
8
12
16
20
I
(mA)
V
(V)
F
R
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
MGL859
MGL858
0
0
handbook, halfpage
handbook, halfpage
2
(2)
(1)
(3)
S
21
(dB)
2
S
21
(dB)
−1
−10
(4)
−2
−3
−20
−30
−4
−5
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
f (GHz)
f (GHz)
(1) IF = 100 mA. (2) IF = 10 mA. (3) IF = 1 mA. (4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and biased
via the analyzer Tee network.
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Tamb = 25 °C.
Fig.4 Insertion loss ( S21 2) of the diode as a
function of frequency; typical values.
Fig.5 Isolation ( S21 2) of the diode as a function
of frequency; typical values.
1999 Sep 21
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.35
0.25
0.2
0.1
0.7
0.5
1.3
1.1
0.9
0.7
1.7
1.5
mm
0.15
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-79
98-11-25
SOD523
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Sep 21
5
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
NOTES
1999 Sep 21
6
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
NOTES
1999 Sep 21
7
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SCA
© Philips Electronics N.V. 1999
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Printed in The Netherlands
125004/04/pp8
Date of release: 1999 Sep 21
Document order number: 9397 750 06418
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