BAP64-05TRL13 [NXP]
DIODE SILICON, PIN DIODE, PIN Diode;
| 型号： | BAP64-05TRL13 |
| 厂家： | 
NXP |
| 描述： | DIODE SILICON, PIN DIODE, PIN Diode 衰减器 高压 开关 光电二极管 |
| 文件： | 总7页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
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BAP64-05
Silicon PIN diode
Preliminary specification
1999 Jun 16
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-05
FEATURES
PINNING
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
PIN
DESCRIPTION
1
2
3
anode (a1)
anode (a2)
• Low diode forward resistance
• Low series inductance
common cathode
• For applications up to 3 GHz.
APPLICATIONS
• RF attenuators and switches.
DESCRIPTION
Two planar PIN diodes in common cathode configuration
in a SOT23 small plastic SMD package.
Marking code: 5Kp.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
IF
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
−
−
−
175
V
100
mA
mW
°C
Ptot
Tstg
Tj
Ts = 90 °C
250
−65
−65
+150
+150
junction temperature
°C
1999 Jun 16
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-05
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per diode
VF
forward voltage
IF = 50 mA
−
0.95
−
1.1
10
1
V
VR = 175 V
−
−
−
−
−
−
−
−
−
−
µA
µA
pF
pF
pF
Ω
IR
reverse leakage current
VR = 20 V
−
VR = 0; f = 1 MHz
0.52
0.37
0.23
20
−
Cd
diode capacitance
VR = 1 V; f = 1 MHz
0.5
0.35
40
20
3.8
1.35
−
VR = 20 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
IF = 100 mA; f = 100 MHz; note 1
10
Ω
rD
diode forward resistance
charge carrier life time
2
Ω
0.7
1.55
Ω
τL
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
µs
measured at IR = 3 mA
LS
series inductance
−
1.4
−
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
220
UNIT
Rth j-s
thermal resistance from junction to soldering point
K/W
1999 Jun 16
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-05
GRAPHICAL DATA
600
CD
(fF)
500
100
rD
Ω
(
)
400
300
200
100
0
10
1
0.1
0
4
8
12
16
20
0.1
1
10
100
IF (mA)
V
R (V)
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
0
|S21|2
|S21|2
(1)
(2)
(dB)
(dB)
-5
-1
(3)
(4)
-10
-15
-20
-25
-30
-2
-3
-4
-5
0.5
1
1.5
2
2.5
f (GHz)
3
0.5
1
1.5
2
2.5
f (GHz)
3
(1) IF = 100 mA.; (2) IF = 10 mA.; (3) IF = 1 mA.; (4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
amb = 25 °C.
biased via the analyzer Tee network.
T
Tamb = 25 °C.
Fig.4 Insertion loss (|S21|2) of the diode as a
Fig.5 Isolation (|S21|2) of the diode as a function
function of frequency; typical values.
of frequency; typical values.
1999 Jun 16
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-05
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 Jun 16
5
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-05
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 16
6
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© Philips Electronics N.V. 1999
SCA65
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Date of release: 1999 Jun 16
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