BAS116T/R [NXP]
0.215A, 85V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3;
| 型号： | BAS116T/R |
| 厂家： | 
NXP |
| 描述： | 0.215A, 85V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 光电二极管 |
| 文件： | 总8页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS116
Low-leakage diode
Product data sheet
2003 Dec 12
Supersedes data of 1999 May 26
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS116
FEATURES
PINNING
• Plastic SMD package
PIN
1
DESCRIPTION
• Low leakage current: typ. 3 pA
anode
• Switching time: typ. 0.8 µs
2
not connected
cathode
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
3
umns
2
1
APPLICATION
• Low leakage current applications in surface mounted
circuits.
2
n.c.
1
3
DESCRIPTION
3
MAM106
Top view
Epitaxial medium-speed switching diode with a low
leakage current in a small SOT23 plastic SMD package.
Marking code:
JVp = made in Hong Kong;
JVt = made in Malaysia;
JVW = Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
BAS116
−
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
CONDITIONS
MIN. MAX. UNIT
−
−
−
−
85
V
75
V
IF
see Fig.2; note 1
215
500
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
250
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
mW
−65
−
+150 °C
150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
2
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS116
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
TYP. MAX. UNIT
VF
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
−
−
−
−
0.9
1
V
V
V
V
1.1
1.25
IR
reverse current
VR = 75 V
0.003
3
5
nA
nA
pF
µs
VR = 75 V; Tj = 150 °C
80
−
Cd
trr
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
0.8
3
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-tp)
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
330
500
K/W
K/W
Rth(j-a)
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
3
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS116
GRAPHICAL DATA
MLB752 - 1
MLB755
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
200
(1)
(2)
(3)
100
100
0
0
0
0
100
200
o
0.4
0.8
1.2
1.6
T
( C)
amb
V
(V)
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Dec 12
4
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS116
MBG526
mlb754
2
2
10
handbook, halfpage
I
R
(nA)
(1)
C
d
10
(pF)
1
1
−1
10
(2)
−2
−3
10
0
0
10
5
10
15
20
0
50
100
150
200
V
(V)
R
T (°C)
j
(1) Maximum values.
(2) Typical values.
V
R = 75 V.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery time test circuit and waveforms.
2003 Dec 12
5
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS116
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2003 Dec 12
6
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS116
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Dec 12
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp8
Date of release: 2003 Dec 12
Document order number: 9397 750 12391
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