BAS12 [NXP]
Controlled avalanche rectifiers; 控制雪崩整流器
| 型号： | BAS12 |
| 厂家： | 
NXP |
| 描述： | Controlled avalanche rectifiers |
| 文件： | 总7页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS11; BAS12
Controlled avalanche rectifiers
1996 Sep 26
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec
technology.
• High maximum operating
temperature
(1)
• Low leakage current
• Excellent stability
(1) Implotec is a trademark of Philips.
• Available in ammo-pack.
a
k
MAM196
Marking code BAS11: S11.
Marking code BAS12: S12.
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
repetitive peak reverse voltage
BAS11
CONDITIONS
MIN.
MAX.
UNIT
VRRM
−
−
300
400
V
V
BAS12
VRWM
working reverse voltage
BAS11
−
−
300
400
V
V
BAS12
VR
continuous reverse voltage
BAS11
−
−
−
300
400
350
V
V
BAS12
IF(AV)
mA
mA
A
average forward current
averaged over any 20 ms period;
Ttp = 75 °C; lead length = 10 mm;
see Figs 2 and 4
−
−
−
300
4
averaged over any 20 ms period;
Tamb = 30 °C; PCB mounting
(see Fig.8); see Figs 3 and 4
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
PRRM
repetitive peak reverse power
dissipation
t = 10 µs square wave; f = 50 Hz;
Tamb = 25 °C
75
W
Tstg
Tj
storage temperature
junction temperature
−65
−65
+150
+150
°C
°C
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
1.0
UNIT
VF
IF = 300 mA; Tj = Tjmax; see Fig.5
IF = 300 mA; see Fig.5
IR = 0.1 mA
−
−
−
−
V
V
1.1
V(BR)R
reverse avalanche
breakdown voltage
BAS11
330
440
−
−
−
−
−
−
−
−
V
V
BAS12
IR
reverse current
VR = VRRMmax; see Fig.6
250
10
1
nA
µA
µs
VR = VRRMmax; Tj = 125 °C; see Fig.6
−
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.9
−
Cd
VR = 0 V; f = 1 MHz; see Fig.7
−
20
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
lead length = 10 mm
note 1
VALUE
180
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
K/W
K/W
340
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.8.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
GRAPHICAL DATA
MGD293
MGD295
0.4
0.6
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
0.3
0.4
0.2
0.1
0.2
0
0
0
0
40
80
120
160
200
40
80
120
160
T
200
(°C)
o
T
( C)
amb
tp
Lead length 10 mm.
a = 1.57; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.8.
a = 1.57; VR = VRRMmax; δ = 0.5.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MGD292
MGD294
0.5
5
handbook, halfpage
handbook, halfpage
I
P
(W)
F
(A)
a = 3 2.5 2 1.57
0.4
4
1.42
3
2
1
0
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
(A)
0
1
2
3
V
(V)
F
I
F(AV)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line: Tj = 25 °C.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Dotted line: Tj = 150 °C.
Fig.5 Forward current as a function of forward
voltage; maximum values.
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
MGD297
MGD296 - 1
2
10
10
handbook, halfpage
handbook, halfpage
I
R
C
d
(pF)
(µA)
10
1
−1
1
10
10
−1
2
3
0
50
100
150
200
1
10
10
10
o
V
(V)
T ( C)
R
j
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
25
7
50
2
3
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1996 Sep 26
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
1996 Sep 26
6
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
PACKAGE OUTLINE
3.5 max
3.0 max
0.55
max
1.7
max
MBC053
29 min
29 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.10 SOD91.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
7
Not recommended for new designs
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