BAS16J [NXP]
Single high-speed switching diode; 单个高速开关二极管型号: | BAS16J |
厂家: | NXP |
描述: | Single high-speed switching diode |
文件: | 总10页 (文件大小:193K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS16J
Single high-speed switching diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I High switching speed: trr ≤ 4 ns
I Low capacitance: Cd ≤ 1.5 pF
I Reverse voltage: VR ≤ 100 V
I Very small and flat lead SMD plastic
package
I Low leakage current
I Repetitive peak reverse voltage:
V
RRM ≤ 100 V
I Excellent coplanarity and improved
thermal behavior
1.3 Applications
I High-speed switching
I Voltage clamping
I General-purpose switching
I Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
Parameter
Symbol
Conditions
Min
Typ
Max
250
1
Unit
mA
µA
V
[1]
[2]
IF
forward current
-
-
-
-
-
-
-
-
IR
VR
trr
reverse current
VR = 75 V
reverse voltage
reverse recovery time
100
4
ns
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAS16J
NXP Semiconductors
Single high-speed switching diode
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
1
2
2
anode
sym006
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOD323F
BAS16J
SC-90
plastic surface-mounted package; 2 leads
4. Marking
Table 4.
Marking codes
Type number
Marking code
BAS16J
AR
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
2 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-
100
V
VR
IF
reverse voltage
forward current
-
-
-
100
250
500
V
[1]
[2]
mA
mA
IFRM
repetitive peak forward
current
tp ≤ 0.5 ms;
δ ≤ 0.25
IFSM
non-repetitive peak forward square wave
current
tp = 100 µs
-
3.3
A
tp = 1 ms
-
2
A
tp = 10 ms
-
1.5
A
[3][4]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
550
150
+150
+150
mW
°C
°C
°C
-
Tamb
Tstg
−65
−65
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] Tj = 25 °C prior to surge.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[4] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1][2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
230
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
55
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
3 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
VF forward voltage
Min
Typ Max
Unit
[1]
IF = 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
mV
mV
V
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V
nA
µA
µA
µA
pF
ns
V
VR = 75 V
1
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
VR = 0 V; f = 1 MHz
30
50
Cd
trr
diode capacitance
1.5
4
[2]
[3]
reverse recovery time
forward recovery voltage
VFR
1.75
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
4 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
mbg382
006aaa308
10
300
I
F
)
(mA
I
FSM
(A)
(1)
(2)
(3)
200
100
0
1
10
−2
−1
0
1
2
10
1
10
V
(V)
F
t
(ms)
p
(1) Tamb = 150 °C; typical values
(2) Tamb = 25 °C; typical values
(3) Tamb = 25 °C; maximum values
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 1. Forward current as a function of forward
voltage
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
mga884
5
0.8
10
C
(pF
d
I
R
)
(nA)
(1)
4
0.6
0.4
10
(2)
(3)
3
10
2
0.2
0
10
10
0
4
8
12
16
0
100
200
T (°C)
j
V (V)
R
(1) VR = 75 V; maximum values
(2) VR = 75 V; typical values
(3) VR = 25 V; typical values
f = 1 MHz; Tamb = 25 °C
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
5 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
t
p
r
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
6 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
9. Package outline
1.35
1.15
0.80
0.65
0.5
0.3
1
2.7 1.8
2.3 1.6
2
0.40
0.25
0.25
0.10
Dimensions in mm
04-09-13
Fig 7. Package outline SOD323F (SC-90)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
-135
BAS16J
SOD323F
4 mm pitch, 8 mm tape and reel
-115
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
3.05
2.80
2.10
1.60
solder lands
solder resist
1.65 0.95
0.50 0.60
001aab169
occupied area
solder paste
0.50
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 8. Reflow soldering footprint SOD323F (SC-90)
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
7 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS16J_1
20070308
Product data sheet
-
-
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
8 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
13.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
9 of 10
BAS16J
NXP Semiconductors
Single high-speed switching diode
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 March 2007
Document identifier: BAS16J_1
相关型号:
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