BAS16VY [NXP]

Triple high-speed switching diodes; 三重高速开关二极管
BAS16VY
型号: BAS16VY
厂家: NXP    NXP
描述:

Triple high-speed switching diodes
三重高速开关二极管

整流二极管 开关 光电二极管 PC
文件: 总12页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS16VV; BAS16VY  
Triple high-speed switching diodes  
Rev. 02 — 10 September 2004  
Product data sheet  
1. Product profile  
1.1 General description  
Three electrically isolated high-speed switching diodes, encapsulated in very small SMD  
plastic packages.  
Table 1:  
Product overview  
Type number  
Package  
Philips  
Configuration  
EIAJ  
-
BAS16VV  
BAS16VY  
SOT666  
SOT363  
triple isolated diode  
triple isolated diode  
SC-88  
1.2 Features  
Very small SMD plastic packages  
High-speed switching  
Three electrically isolated diodes  
Low capacitance.  
1.3 Applications  
General purpose switching in surface mounted circuits.  
1.4 Quick reference data  
Table 2:  
Symbol  
VR  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
450  
4
Unit  
V
reverse voltage  
-
-
-
-
-
-
IFRM  
repetitive peak forward current  
reverse recovery time  
mA  
ns  
trr  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
2. Pinning information  
Table 3:  
Discrete pinning  
Pin  
1
Description  
Simplified outline  
Symbol  
anode (diode 1)  
anode (diode 2)  
anode (diode 3)  
cathode (diode 3)  
cathode (diode 2)  
cathode (diode 1)  
6
5
2
4
6
5
4
2
3
4
1
3
5
sym043  
1
2
3
6
001aab555  
3. Ordering information  
Table 4:  
Ordering information  
Type number Package  
Name  
Description  
Version  
SOT666  
SOT363  
BAS16VV  
BAS16VY  
-
plastic surface mounted package; 6 leads  
plastic surface mounted package; 6 leads  
SC-88  
4. Marking  
Table 5:  
Marking  
Type number  
BAS16VV  
Marking code[1]  
53  
BAS16VY  
16*  
[1] * = p: Made in Hong Kong  
* = t: Made in Malaysia  
* = W: Made in China  
5. Limiting values  
Table 6:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Max  
Unit  
repetitive peak reverse  
voltage  
-
100  
V
VR  
IF  
reverse voltage  
forward current  
-
-
-
100  
200  
450  
V
mA  
mA  
IFRM  
repetitive peak forward  
current  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
2 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
Table 6:  
Limiting values …continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
[1]  
IFSM  
non-repetitive peak forward square wave  
-
-
-
-
current  
tp = 1 µs  
4.5  
1
A
A
A
tp = 1 ms  
tp = 1 s  
0.5  
Ptot  
total power dissipation  
[2] [3]  
[4]  
SOT666  
T
amb 25 °C  
-
180  
mW  
mW  
°C  
SOT363  
Tsp = 85 °C  
-
250  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
Tamb  
Tstg  
65  
65  
+150  
+150  
°C  
°C  
[1] Tj = 25 °C prior to surge; see Figure 2.  
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.  
[3] Single diode loaded.  
[4] Solder points at pins 2, 3, 5 and 6.  
6. Thermal characteristics  
Table 7:  
Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-a)  
thermal resistance from junction in free air  
to ambient  
[1] [2]  
[2] [3]  
SOT666  
-
-
-
-
700  
410  
K/W  
K/W  
Rth(j-s)  
thermal resistance from junction  
to soldering point  
[4]  
SOT363  
-
-
260  
K/W  
[1] Refer to SOT666 standard mounting conditions.  
[2] Reflow soldering is the only recommended soldering method.  
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting  
pad.  
[4] Solder points at pins 2, 3, 5 and 6.  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
3 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
7. Characteristics  
Table 8:  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max  
Unit  
VF  
forward voltage  
see Figure 1  
IF = 1 mA  
-
-
-
-
-
-
-
-
715  
855  
1
mV  
mV  
V
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
1.25  
V
IR  
reverse current  
see Figure 3  
VR = 25 V  
-
-
-
-
-
-
-
-
-
-
30  
1
nA  
µA  
µA  
µA  
pF  
VR = 75 V  
VR = 25 V; Tj = 150 °C  
VR = 75 V; Tj = 150 °C  
30  
50  
1.5  
Cd  
trr  
diode  
capacitance  
VR = 0 V; f = 1 MHz;  
see Figure 4  
[1]  
[2]  
reverse recovery see Figure 5  
time  
-
-
-
-
4
ns  
V
Vfr  
forward recovery see Figure 6  
voltage  
1.75  
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.  
[2] When switched from IF = 10 mA; tr = 20 ns.  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
4 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
mbg382  
mgw103  
10  
300  
I
F
)
(mA  
I
FSM  
(A)  
(1)  
(2)  
(3)  
200  
100  
0
1
1  
10  
2
3
4
0
1
2
1
10  
10  
10  
10  
V
(V)  
F
t
(µs)  
p
(1) Tj = 150 °C; typical values.  
(2) Tj = 25 °C; typical values.  
Based on square wave currents.  
Tj = 25 °C prior to surge.  
(3) Tj = 25 °C; maximum values.  
Fig 1. Forward current as a function of forward  
voltage.  
Fig 2. Maximum permissible non-repetitive peak  
forward current as a function of pulse duration.  
mga884  
mbg446  
5
0.8  
10  
C
d
(pF  
I
R
)
(nA)  
V
= 75 V  
R
4
10  
0.6  
0.4  
max  
75 V  
25 V  
3
10  
2
10  
0.2  
0
typ  
typ  
10  
0
100  
200  
0
4
8
12  
16  
T (°C)  
j
V
R
(V)  
f = 1 MHz; Tj = 25 °C.  
Fig 3. Reverse current as a function of junction  
temperature.  
Fig 4. Diode capacitance as a function of reverse  
voltage; typical values.  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
5 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
8. Test information  
t
t
p
r
t
D.U.T.  
10 %  
I
+ I  
F
t
F
rr  
R
S
= 50  
SAMPLING  
OSCILLOSCOPE  
t
R
i
= 50 Ω  
V = V + I × R  
S
R
F
(1)  
90 %  
V
R
mga881  
input signal  
output signal  
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05.  
Oscilloscope: Rise time tr = 0.35 ns.  
(1) IR = 1 mA.  
Fig 5. Reverse recovery voltage test circuit and waveforms.  
I
1 kΩ  
450 Ω  
I
V
90 %  
R
S
= 50 Ω  
OSCILLOSCOPE  
= 50 Ω  
V
fr  
D.U.T.  
R
i
10 %  
mga882  
t
t
t
t
p
r
input  
signal  
output  
signal  
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor δ ≤ 0.005.  
Fig 6. Forward recovery voltage test circuit and waveforms.  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
6 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
9. Package outline  
Plastic surface mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
01-01-04  
01-08-27  
SOT666  
Fig 7. Package outline SOT666.  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
7 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
Fig 8. Package outline SOT363 (SC-88).  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
8 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
10. Packing information  
Table 9:  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code. [1]  
Type number  
Package  
Description  
Packing quantity  
3000  
-
4000  
-115  
-
10000  
-
BAS16VV  
BAS16VY  
SOT666  
SOT363  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
-115  
-125  
-135  
-165  
[1] For further information and the availability of packing methods, see Section 15.  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
9 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
11. Revision history  
Table 10: Revision history  
Document ID  
Release date Data sheet status  
20040910 Product data sheet  
Change notice Order number  
Supersedes  
BAS16VV_BAS16VY_2  
Modifications:  
-
9397 750 13856 BAS16VY_1  
The format of this data sheet has been redesigned to comply with the new presentation and  
information standard of Philips Semiconductors.  
Type number BAS16VV added.  
Table 2 “Quick reference data”: table added.  
Table 6 “Limiting values”: maximum value of VRRM changed from 85 V to 100 V.  
Table 6 “Limiting values”: maximum value of VR changed from 75 V to 100 V.  
BAS16VY_1  
20030408  
Product specification -  
9397 750 10909  
-
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
10 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
12. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
13. Definitions  
14. Disclaimers  
Short-form specification The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
15. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
9397 750 13856  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 02 — 10 September 2004  
11 of 12  
BAS16VV; BAS16VY  
Philips Semiconductors  
Triple high-speed switching diodes  
16. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Packing information. . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Contact information . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
© Koninklijke Philips Electronics N.V. 2004  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 10 September 2004  
Document order number: 9397 750 13856  
Published in The Netherlands  

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