BAS216T/R [NXP]
0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2;
| 型号： | BAS216T/R |
| 厂家： | 
NXP |
| 描述： | 0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2 二极管 |
| 文件： | 总9页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS216
High-speed switching diode
Product data sheet
2002 May 28
Supersedes data of 1999 Apr 22
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
FEATURES
DESCRIPTION
• Small ceramic SMD package
The BAS216 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
cathode mark
handbook, 4 columns
a
k
k
a
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
bottom view
Marking code: A6.
side view
top view
MAM139
• High-speed switching in e.g.
surface mounted circuits.
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
85
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
75
V
IF
note 1
250
500
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
400
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; see Fig.2; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
2002 May 28
2
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 1 mA
−
−
−
−
715
mV
IF = 10 mA
855
1
mV
V
IF = 50 mA
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
−
−
−
−
−
−
30
1
nA
µA
µA
µA
pF
ns
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
30
50
1.5
4
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
200
UNIT
K/W
K/W
Rth j-a
315
Note
1. Device mounted on an FR4 printed-circuit board.
2002 May 28
3
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
GRAPHICAL DATA
MSA570
MBG382
300
500
handbook, halfpage
I
F
(mA)
P
tot
(1)
(2)
(3)
(mW)
200
250
100
0
0
0
1
2
0
100
200
o
V
(V)
F
T
( C)
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible total power
dissipation as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2002 May 28
4
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
MSA563
MBH285
5
0.6
10
handbook, halfpage
C
d
(pF)
I
R
(nA)
V
= 75 V
75 V
R
4
0.5
10
10
10
3
2
0.4
0.2
25 V
0
0
10
4
8
12
16
(V)
0
100
200
o
V
T
( C)
R
j
Dotted line: maximum values.
Solid lines: typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2002 May 28
5
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
2002 May 28
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
PACKAGE OUTLINE
Very small ceramic rectangular surface mounted package
SOD110
D
E
A
y
cathode
identifier
DIMENSIONS (mm are the original dimensions)
A
UNIT
D
E
y
max.
1
2
2.10
1.90
1.40
1.10
mm
1.6
0.1
0
0.5 1 mm
scale
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-04-14
SOD110
2002 May 28
7
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 May 28
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/05/pp9
Date of release: 2002 May 28
Document order number: 9397 750 09729
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