BAS21PG [NXP]
SIGNAL DIODE;
NXP 
3
5
3
T
O
BAS21PG
Dual isolated high-voltage switching diode
S
9 June 2015
Product data sheet
1. General description
Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns
Low leakage current
Reverse voltage VR ≤ 250 V
Low capacitance: Cd ≤ 2 pF
Very small SMD plastic package
AEC-Q101 qualified
•
•
•
•
•
•
3. Applications
High-speed switching at high voltage
High-voltage general-purpose switching
Voltage clamping
•
•
•
•
Reverse polarity protection
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
IF
forward current
reverse voltage
Tj = 25 °C; single diode loaded
Tj = 25 °C
-
-
-
-
225
250
mA
V
VR
Per diode
IR
trr
reverse current
VR = 200 V; Tj = 25 °C
-
-
25
-
100
50
nA
ns
reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tj = 25 °C
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
5
4
3
1
2
3
4
5
A1
n.c.
A2
K2
K1
anode diode 1
not connected
anode diode 2
cathode diode 2
cathode diode 1
5
4
1
2
TSSOP5 (SOT353)
1
2
3
aaa-018440
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT353
BAS21PG
TSSOP5
plastic surface-mounted package; 5 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
BAS21PG
PG
BAS21PG
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Product data sheet
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
forward current
Tj = 25 °C
-
-
-
-
-
-
-
250
225
125
625
9
V
IF
Tj = 25 °C; single diode loaded
Tj = 25 °C; double diode loaded
mA
mA
mA
A
IFRM
IFSM
repetitive peak forward current tp ≤ 1 ms; δ = 25 %; Tj = 25 °C
non-repetitive peak forward
current
tp = 1 µs; Tj(init) = 25 °C; square wave
tp = 100 µs; Tj(init) = 25 °C; square wave
tp = 10 ms; Tj(init) = 25 °C; square wave
3
A
1.7
A
Per device; one diode loaded
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
[2]
-
255
290
150
150
150
mW
mW
°C
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
BAS21PG
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Product data sheet
9 June 2015
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
495
430
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
[1]
[2]
-
-
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
[3]
-
-
95
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[3] Soldering point of cathode tab.
aaa-018393
3
10
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.01
0.02
10
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS21PG
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Product data sheet
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
aaa-018394
3
10
duty cycle =
Z
1
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.01
0.02
10
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for cathode 1 cm²
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V(BR)R
reverse breakdown
IR = 100 µA; Tj = 25 °C
250
-
-
V
voltage
VF
forward voltage
IF = 100 mA; Tj = 25 °C
IF = 200 mA; Tj = 25 °C
VR = 200 V; Tj = 25 °C
-
-
-
-
-
-
-
1
V
-
1.25
100
-
V
IR
reverse current
25
40
0.8
-
nA
µA
pF
ns
VR = 200 V; Tj = 150 °C
VR = 0 V; f = 1 MHz; Tj = 25 °C
Cd
trr
diode capacitance
2
reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tj = 25 °C
50
BAS21PG
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Product data sheet
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BAS21PG
Dual isolated high-voltage switching diode
aaa-018395
aaa-018396
-4
-5
-6
-7
-8
-9
1
10
10
10
10
10
10
I
R
(1)
(2)
(A)
I
F
(A)
-1
-2
-3
-4
10
(3)
(4)
(1)
(2)
10
10
10
(3) (4)
(5)
-10
-11
10
(5)
10
-12
10
0.0
0.4
0.8
1.2
1.6
0
50
100
150
200
250
V
(V)
V (V)
R
F
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
Fig. 3. Forward current as a function of forward
voltage; typical values
Fig. 4. Reverse current as a function of reverse
voltage; typical values
mbg703
aaa-018397
2
10
1.0
C
d
(pF)
I
FSM
(A)
0.8
10
0.6
0.4
0.2
0.0
1
- 1
10
2
3
4
1
10
10
10
10
0
2
4
6
8
t
(µs)
V (R)
R
p
Based on square wave currents.
Tj(init) = 25 °C
f = 1MHz; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
Fig. 5. Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAS21PG
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Product data sheet
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
aaa-018398
3
I
F(AV)
(A)
(1)
(2)
2
1
0
(3)
(4)
0
25
50
75
100
125
150
(°C)
175
T
amb
FR4 PCB, standard footprint; one diode loaded
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 7. Average forward current as a function of ambient temperature; typical values
11. Test information
t
r
t
p
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
t
OSCILLOSCOPE
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Fig. 8. Reverse recovery time: test circuit and waveforms
t
p
P
duty cycle δ =
t
cy
t
cy
t
p
t
006aac658
Fig. 9. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
BAS21PG
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
7 / 13
NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
5
4
2.2
2.0 1.15
1.35
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
04-11-16
Fig. 10. Package outline TSSOP5 (SOT353)
13. Soldering
2.65
0.5 0.6
(4×) (4×)
0.75
2.35
solder lands
solder resist
0.4
0.75
solder paste
occupied area
0.5
(4×)
0.6
Dimensions in mm
0.6
(4×)
0.9
0.9
sot353_fr
Fig. 11. Reflow soldering footprint for TSSOP5 (SOT353)
BAS21PG
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Product data sheet
9 June 2015
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
4.9
2.25
1.5
solder lands
solder resist
1
0.85
4.5
2.5
occupied area
0.85
1
Dimensions in mm
1.5
preferred transport
direction during soldering
1.3
1.3
1.225
1.225
sot353_fw
Fig. 12. Wave soldering footprint for TSSOP5 (SOT353)
BAS21PG
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAS21PG v.1
20150609
Product data sheet
-
-
BAS21PG
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
10 / 13
NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BAS21PG
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
11 / 13
NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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Product data sheet
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NXP Semiconductors
BAS21PG
Dual isolated high-voltage switching diode
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................5
11
Test information .....................................................7
11.1
Quality information ............................................... 8
12
13
14
Package outline ..................................................... 8
Soldering ................................................................ 8
Revision history ...................................................10
15
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
15.1
15.2
15.3
15.4
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 June 2015
BAS21PG
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
9 June 2015
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