BAS21W [NXP]
High-voltage switching diodes; 高压开关二极管
| 型号： | BAS21W |
| 厂家： | 
NXP |
| 描述： | High-voltage switching diodes |
| 文件： | 总11页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS21W series
High-voltage switching diodes
Rev. 01 — 9 October 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a very small Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Type number
Configuration
Package
NXP
Package
configuration
JEDEC
BAS21W
single
SOT323
SC-70
very small
BAS21AW
BAS21SW
dual common anode
dual series
1.2 Features
I High switching speed: trr ≤ 50 ns
I Low leakage current
I Low capacitance: Cd ≤ 2 pF
I Very small SMD plastic package
I AEC-Q101 qualified
I High reverse voltage: VR ≤ 250 V
1.3 Applications
I High-speed switching
I Voltage clamping
I General-purpose switching
I Reverse polarity protection
1.4 Quick reference data
Table 2.
Quick reference data
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Per diode
[1]
[2]
IF
forward current
-
-
-
-
-
-
-
-
225
100
250
50
mA
nA
V
IR
VR
trr
reverse current
VR = 200 V
reverse voltage
reverse recovery time
ns
[1] Single diode loaded.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAS21W series
NXP Semiconductors
High-voltage switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BAS21W
1
2
3
anode
3
3
not connected
cathode
1
2
006aaa764
1
2
BAS21AW
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
3
3
1
2
1
2
006aab099
BAS21SW
1
2
3
anode (diode 1)
3
3
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
2
1
2
006aaa763
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
plastic surface-mounted package; 3 leads
Version
BAS21W
SC-70
SOT323
BAS21AW
BAS21SW
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
2 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
4. Marking
Table 5.
Marking codes
Type number
BAS21W
Marking code[1]
X4*
X6*
X5*
BAS21AW
BAS21SW
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
forward current
-
-
-
-
250
225
125
625
V
[1]
[2]
IF
mA
mA
mA
IFRM
IFSM
repetitive peak forward
current
[3]
non-repetitive peak forward square wave
current
tp = 1 µs
-
-
-
9
A
A
A
tp = 100 µs
3
tp = 10 ms
1.7
Per device
[4]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
200
mW
°C
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 °C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
3 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
6. Thermal characteristics
Table 7.
Symbol
Per device
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from
junction to ambient
in free air
-
-
-
-
625
300
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max Unit
VF
forward voltage
IF = 100 mA
-
-
-
-
-
-
-
-
-
-
-
-
1.0
1.25
100
100
2
V
IF = 200 mA
V
IR
reverse current
VR = 200 V
nA
µA
pF
ns
VR = 200 V; Tj = 150 °C
f = 1 MHz; VR = 0 V
Cd
trr
diode capacitance
[1]
reverse recovery time
50
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
4 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
mbg703
006aab212
2
10
600
I
FSM
(A)
I
F
(mA)
10
400
(2)
(3)
(4)
1
200
(1)
−1
10
0
2
3
4
1
10
10
10
10
0
0.4
0.8
1.2
1.6
t
(µs)
V
(V)
p
F
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
006aab213
2
10
R
(µA)
(1)
(2)
I
10
1
−1
10
10
10
10
10
(3)
−2
−3
−4
−5
(4)
0
50
100
150
200
250
(V)
V
R
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 3. Reverse current as a function of reverse voltage; typical values
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
5 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
mbg447
006aab214
300
1.0
C
d
I
F
(pF)
(1)
(2)
(mA)
0.8
200
0.6
100
0.4
0.2
0
0
2
4
6
8
0
50
100
150
200
(°C)
V
R
(V)
T
amb
f = 1 MHz; Tamb = 25 °C
FR4 PCB, standard footprint
(1) Single diode loaded.
(2) Double diode loaded.
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
Fig 5. Forward current as a function of ambient
temperature; derating curve
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
6 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
9. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 7. Package outline SOT323 (SC-70)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
BAS21W
SOT323
4 mm pitch, 8 mm tape and reel
-115
-135
BAS21AW
BAS21SW
[1] For further information and the availability of packing methods, see Section 14.
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
7 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
11. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
(3×)
solder paste
occupied area
1.3
2.35
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 8. Reflow soldering footprint SOT323 (SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig 9. Wave soldering footprint SOT323 (SC-70)
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
8 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
12. Revision history
Table 10. Revision history
Document ID
Release date
20091009
Data sheet status
Change notice
Supersedes
BAS21W_SER_1
Product data sheet
-
-
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
9 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
10 of 11
BAS21W series
NXP Semiconductors
High-voltage switching diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 October 2009
Document identifier: BAS21W_SER_1
相关型号：
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