BAS28-T [NXP]

DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode;
BAS28-T
型号: BAS28-T
厂家: NXP    NXP
描述:

DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode

光电二极管
文件: 总12页 (文件大小:256K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS28  
High-speed double diode  
Rev. 3 — 22 July 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a  
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not  
connected.  
1.2 Features and benefits  
„ High switching speed: trr 4 ns  
„ Reverse voltage: VR 75 V  
„ Repetitive peak reverse voltage: VRRM 85 V  
„ Repetitive peak forward current: IFRM 500 mA  
„ AEC-Q101 qualified  
„ Small SMD package  
1.3 Applications  
„ High-speed switching in e.g. surface-mounted circuits  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
[1]  
[2]  
IF  
forward current  
-
-
-
-
-
-
-
-
215  
1
mA  
μA  
V
IR  
VR  
trr  
reverse current  
VR = 75 V  
reverse voltage  
reverse recovery time  
75  
4
ns  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).  
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.  
BAS28  
NXP Semiconductors  
High-speed double diode  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
Simplified outline  
Graphic symbol  
cathode (diode 1)  
cathode (diode 2)  
anode (diode 2)  
anode (diode 1)  
4
3
4
3
2
3
4
1
2
1
2
006aab100  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
BAS28  
plastic surface-mounted package; 4 leads  
SOT143B  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code[1]  
BAS28  
JT*  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
2 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Max  
Unit  
repetitive peak  
reverse voltage  
-
85  
V
VR  
IF  
reverse voltage  
forward current  
-
-
-
75  
V
[1]  
[3]  
215  
500  
mA  
mA  
IFRM  
repetitive peak  
forward current  
IFSM  
non-repetitive peak  
forward current  
square wave  
tp = 1 μs  
-
-
-
4
A
A
A
tp = 1 ms  
tp = 1 s  
1
0.5  
Per device  
[1][2]  
Ptot  
Tj  
total power dissipation  
junction temperature  
storage temperature  
Tamb = 25 °C  
-
250  
mW  
°C  
-
150  
Tstg  
65  
+150  
°C  
[1] Device mounted on an FR4 PCB.  
[2] One diode loaded.  
[3] Tj = 25 °C prior to surge.  
6. Thermal characteristics  
Table 6.  
Symbol  
Per device; one diode loaded  
Rth(j-a) thermal resistance from  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
in free air  
-
-
-
-
500  
360  
K/W  
K/W  
junction to ambient  
Rth(j-t)  
thermal resistance from  
junction to tie-point  
[1] Device mounted on an FR4 PCB.  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
3 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
7. Characteristics  
Table 7.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max Unit  
VF  
forward voltage  
IF = 1 mA  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715  
855  
1
mV  
mV  
V
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
1.25  
30  
V
IR  
reverse current  
VR = 25 V  
nA  
μA  
μA  
μA  
pF  
ns  
V
VR = 75 V  
1
VR = 25 V; Tj = 150 °C  
VR = 75 V; Tj = 150 °C  
f = 1 MHz; VR = 0 V  
30  
50  
Cd  
trr  
diode capacitance  
1.5  
4
[1]  
[2]  
reverse recovery time  
forward recovery voltage  
VFR  
1.75  
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.  
[2] When switched from IF = 10 mA; tr = 20 ns.  
mbg704  
mbg382  
2
10  
300  
I
I
F
FSM  
(A)  
)
(mA  
(1)  
(2)  
(3)  
10  
200  
100  
0
1
1  
10  
2
3
4
0
1
2
1
10  
10  
10  
10  
V
F
(V)  
t
p
(μs)  
(1) Tj = 150 °C; typical values  
(2) Tj = 25 °C; typical values  
Based on square wave currents.  
Tj = 25 °C; prior to surge  
(3) Tj = 25 °C; maximum values  
Fig 1. Forward current as a function of forward  
voltage  
Fig 2. Non-repetitive peak forward current as a  
function of pulse duration; maximum values  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
4 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
mbg446  
mga884  
5
0.8  
10  
C
(pF  
d
I
R
)
(nA)  
(1)  
4
0.6  
0.4  
10  
(2)  
(3)  
3
10  
2
0.2  
0
10  
10  
0
4
8
12  
16  
0
100  
200  
V
R
(V)  
T (°C)  
j
VR = VRmax  
f = 1 MHz; Tj = 25 °C  
(1) VR = 75 V; maximum values  
(2) VR = 75 V; typical values  
(3) VR = 25 V; typical values  
Fig 3. Reverse current as a function of junction  
temperature  
Fig 4. Diode capacitance as a function of reverse  
voltage; typical values  
msa562  
250  
I
F
(mA)  
200  
150  
100  
50  
0
0
50  
100  
150  
200  
(°C)  
T
amb  
Fig 5. Forward current as a function of ambient temperature; derating curve  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
5 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
8. Test information  
t
r
t
p
t
D.U.T.  
10 %  
I
F
+ I  
F
t
rr  
R
S
= 50 Ω  
SAMPLING  
OSCILLOSCOPE  
t
R
= 50 Ω  
V = V + I × R  
S
i
R
F
(1)  
90 %  
V
R
mga881  
input signal  
output signal  
(1) IR = 1 mA  
Fig 6. Reverse recovery time test circuit and waveforms  
I
1 kΩ  
450 Ω  
I
V
90 %  
R
S
= 50 Ω  
OSCILLOSCOPE  
= 50 Ω  
V
FR  
D.U.T.  
R
i
10 %  
t
t
t
r
t
p
input signal  
output signal  
mga882  
Fig 7. Forward recovery voltage test circuit and waveforms  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
6 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
9. Package outline  
3.0  
2.8  
1.1  
0.9  
1.9  
4
3
0.45  
0.15  
2.5 1.4  
2.1 1.2  
1
2
0.88  
0.78  
0.48  
0.38  
0.15  
0.09  
1.7  
Dimensions in mm  
04-11-16  
Fig 8. Package outline BAS28 (SOT143B)  
10. Packing information  
Table 8.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
10000  
BAS28  
SOT143B  
4 mm pitch, 8 mm tape and reel  
-215  
-235  
[1] For further information and the availability of packing methods, see Section 14.  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
7 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
11. Soldering  
3.25  
1.9  
0.6  
(3×)  
0.5  
(3×)  
solder lands  
solder resist  
0.7 0.6  
(3×) (3×)  
2
solder paste  
occupied area  
3
0.7 0.6  
Dimensions in mm  
0.75  
0.95  
0.9  
1
sot143b_fr  
Fig 9. Reflow soldering footprint BAS28 (SOT143B)  
4.45  
2.2  
1.2  
(3×)  
1.425  
(3×)  
solder lands  
solder resist  
2.575  
4.6  
occupied area  
Dimensions in mm  
1.425  
preferred transport direction during soldering  
1
1.2  
sot143b_fw  
Fig 10. Wave soldering footprint BAS28 (SOT143B)  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
8 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
12. Revision history  
Table 9.  
Revision history  
Document ID  
BAS28 v.3  
Release date  
Data sheet status  
Change notice  
Supersedes  
20100722  
Product data sheet  
-
BAS28_2  
Modifications:  
The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
Legal texts have been adapted to the new company name where appropriate.  
Section 1.1 “General description”: amended  
Section 4 “Marking”: updated  
Table 1 “Quick reference data”: added  
Section 8 “Test information”: added  
Figure 8: superseded by minimized package outline drawing  
Section 10 “Packing information”: added  
Section 11 “Soldering”: added  
Section 13 “Legal information”: updated  
BAS28_2  
BAS28_1  
19960910  
Product specification  
-
-
BAS28_1  
-
19960403  
Product specification  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
9 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
13.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
10 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BAS28  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 22 July 2010  
11 of 12  
BAS28  
NXP Semiconductors  
High-speed double diode  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Quality information . . . . . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Packing information . . . . . . . . . . . . . . . . . . . . . 7  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 11  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 22 July 2010  
Document identifier: BAS28  

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