BAS321.115 [NXP]
BAS321 General purpose diode; BAS321通用二极管
| 型号： | BAS321.115 |
| 厂家： | 
NXP |
| 描述： | BAS321 General purpose diode |
| 文件： | 总9页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAS321
General purpose diode
Product data sheet
2004 Jan 26
Supersedes data of 1999 Feb 09
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
FEATURES
PINNING
• Small plastic SMD package
PIN
1
DESCRIPTION
• Switching speed: max. 50 ns
cathode
• General application
2
anode
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA.
handbook, halfpage
1
2
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
MAM406
Marking code: A7
DESCRIPTION
The marking bar indicates the cathode.
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
Fig.1 Simplified outline (SOD323) and symbol.
ORDERING INFORMATION
TYPE
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
NUMBER
NAME
VERSION
BAS321
−
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
250
200
250
625
V
V
IF
see Fig.2; note 1
tp < 0.5 ms; δ ≤ 0.25
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
−
−
9
A
t = 100 µs
t = 10 ms
3
A
1.7
300
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed circuit-board.
2004 Jan 26
2
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
CONDITIONS
MAX.
UNIT
forward voltage
see Fig.3
IF = 100 mA
1
V
V
IF = 200 mA
1.25
IR
reverse current
see Fig.5
VR = 200 V
100
100
2
nA
µA
pF
ns
VR = 200 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-s)
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
VALUE
130
UNIT
Ts = 90°C; note 1
K/W
K/W
Rth(j-a)
note 2
366
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit board.
2004 Jan 26
3
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
GRAPHICAL DATA
MBK927
MBG384
600
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
400
200
200
100
0
0
0
1
2
0
50
100
150
T
200
(°C)
V
(V)
F
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous
forward current as a function of
ambient temperature.
Fig.3 Forward current as a function of
forward voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 26
4
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
MBG381
MBG447
2
10
1.0
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.8
(µA)
10
(1)
(2)
1
1
0.6
0.4
10
10
2
0.2
0
o
0
100
200
2
4
6
8
T ( C)
j
V
(V)
R
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
MBK926
300
handbook, halfpage
V
R
(V)
200
100
0
0
50
100
150
T
200
(°C)
amb
Fig.7 Maximum permissible continuous
reverse voltage as a function of the
ambient temperature.
2004 Jan 26
5
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns;
Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance)
Fig.8 Reverse recovery time and waveforms.
2004 Jan 26
6
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
03-12-17
06-03-16
SOD323
SC-76
2004 Jan 26
7
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 26
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp9
Date of release: 2004 Jan 26
Document order number: 9397 750 12589
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