BAS35-T [NXP]
DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode;
| 型号： | BAS35-T |
| 厂家： | 
NXP |
| 描述： | DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode 局域网 光电二极管 |
| 文件： | 总9页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product data sheet
2003 Mar 20
Supersedes data of 2001 Oct 10
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
FEATURES
PINNING
• Small plastic SMD package
DESCRIPTION
PIN
• Switching speed: max. 50 ns
BAS29
anode
not connected cathode
BAS31
BAS35
• General application
1
2
3
anode
cathode (k1)
cathode (k2)
• Continuous reverse voltage: max. 90 V
• Repetitive peak reverse voltage: max. 110 V
• Repetitive peak forward current: max. 600 mA
• Repetitive peak reverse current: max. 600 mA.
cathode
common
connection
common
anode
handbook, page
APPLICATIONS
2
1
• General purpose switching in e.g. surface mounted
2
1
circuits.
3
DESCRIPTION
3
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
a. Simplified outline.
c. BAS31 diode.
2
1
2
1
n.c.
MARKING
3
3
TYPE NUMBER
BAS29
MARKING CODE(1)
b. BAS29 diode.
d. BAS35 diode.
MAM233
L20 or ∗A8
L21 or ∗V1
L22 or ∗V2
BAS31
BAS35
Fig.1 Simplified outline (SOT23) and symbols.
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
2003 Mar 20
2
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
110
V
V
90
IF
single diode loaded; see Fig.2;
note 1
250
mA
mA
mA
double diode loaded; see Fig.2;
note 1
−
−
150
600
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 1 s
−
−
−
−
−
−
10
A
4
A
0.75
250
600
5
A
Ptot
total power dissipation
Tamb = 25 °C; note 1
mW
mA
mJ
°C
°C
IRRM
ERRM
Tstg
Tj
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C
−65
+150
150
junction temperature
−
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 10 mA
IF = 50 mA
−
−
−
−
−
750
mV
840
900
1
mV
mV
V
IF = 100 mA
IF = 200 mA
IF = 400 mA
see Fig.5
1.25
V
IR
reverse current
VR = 90 V
−
−
100
100
170
nA
µA
V
VR = 90 V; Tj = 150 °C
IR = 1 mA
V(BR)R
reverse avalanche breakdown
voltage
120
Cd
trr
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
−
35
50
pF
ns
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured
at IR = 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
360
UNIT
K/W
K/W
Rth j-a
500
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
4
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
GRAPHICAL DATA
MBG440
MBH280
300
600
handbook, halfpage
handbook, halfpage
I
IF
(mA)
F
(mA)
(1)
200
400
200
(1)
(2)
(3)
100
(2)
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
(2) Double diode loaded.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBH327
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
MBH282
MGD003
2
10
40
handbook, halfpage
handbook, halfpage
I
C
d
(pF)
R
(µA)
10
30
(1)
(2)
1
20
10
−1
10
10
−2
0
0
o
0
100
200
T ( C)
j
10
20
30
V
(V)
R
(1) VR = 90 V; maximum values.
(2) VR = 90 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
6
2003 Mar 20
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Mar 20
7
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2003 Mar 20
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/05/pp9
Date of release: 2003 Mar 20
Document order number: 9397 750 10962
相关型号：
BAS35T/R
DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
NXP
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