BAS4 [NXP]
Low-leakage diode; 低漏电二极管
| 型号： | BAS4 |
| 厂家： | 
NXP |
| 描述： | Low-leakage diode |
| 文件： | 总8页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS45AL
Low-leakage diode
1999 May 28
Product specification
Supersedes data of 1999 May 04
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
FEATURES
DESCRIPTION
• Continuous reverse voltage:
max. 125 V
Epitaxial medium-speed switching diode with a low leakage current in a small
SOD80C glass SMD package.
• Repetitive peak forward current:
max. 625 mA
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 µs.
k
a
handbook, 4 columns
MAM061
APPLICATION
• Low leakage current applications.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
125
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
125
250
625
V
IF
note 1; see Fig.2
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
tp = 1 µs
tp = 1 ms
tp = 1 s
−
−
−
−
4
A
1
A
0.5
400
+175
175
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
−
−
−
780
mV
860
mV
mV
IF = 100 mA
1000
IR
reverse current
see Fig.5
VR = 125 V; Emax = 100 lx
VR = 30 V; Tj = 125 °C; Emax = 100 lx
VR = 125 V; Tj = 125 °C; Emax = 100 lx
VR = 125 V; Tj = 150 °C; Emax = 100 lx
f = 1 MHz; VR = 0; see Fig.6
−
−
−
−
−
1
nA
nA
nA
µA
pF
µs
300
500
2
Cd
trr
diode capacitance
4
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
1.5
−
measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
K/W
K/W
300
375
Rth j-a
note 1
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28
3
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
GRAPHICAL DATA
MBG523
MBG522
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2) (3)
200
200
100
100
0
0
0
o
0.5
1.0
1.5
0
100
200
T
( C)
V
(V)
amb
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on a FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage; typical values.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 28
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
MBD456
MBG524
4
10
3
handbook, halfpage
handbook, halfpage
I
R
(nA)
C
d
(pF)
2
3
10
max
2
10
typ
10
1
1
1
0
0
10
0
50
100
150
5
10
15
20
o
V
(V)
T
( C)
R
j
VR = 125 V.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
5
1999 May 28
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package; 2 connectors
SOD80C
k
a
(1)
D
L
L
H
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
L
D
H
UNIT
scale
1.60
1.45
3.7
3.3
mm
0.3
Note
1. The marking band indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-20
SOD80C
100H01
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 28
6
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
NOTES
1999 May 28
7
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© Philips Electronics N.V. 1999
SCA65
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Printed in The Netherlands
115002/04/pp8
Date of release: 1999 May 28
Document order number: 9397 750 06041
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