BAS55-T [NXP]
DIODE 0.2 A, 60 V, SILICON, SIGNAL DIODE, Signal Diode;
| 型号： | BAS55-T |
| 厂家： | 
NXP |
| 描述： | DIODE 0.2 A, 60 V, SILICON, SIGNAL DIODE, Signal Diode 二极管 |
| 文件： | 总7页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS55
High-speed diode
1996 Sep 10
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
High-speed diode
BAS55
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
DESCRIPTION
• High switching speed: max. 6 ns
1
2
3
anode
• Continuous reverse voltage:
max. 60 V
not connected
cathode
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
handbookpa2ge
1
2
n.c.
1
APPLICATIONS
• High-speed switching in surface
3
mounted circuits.
3
MAM185
Marking code: L5p.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
60
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
60
IF
see Fig.2; note 1
250
600
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
9
3
A
t = 100 µs
t = 10 ms
A
−
1.7
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
250
+150
150
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed diode
BAS55
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3; IF = 200 mA; DC value;
note 1
−
1.0
V
IR
reverse current
see Fig.5
VR = 60 V
−
−
−
−
100
100
2.5
6
nA
µA
pF
ns
VR = 60 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 400 mA to
IR = 400 mA; RL = 100 Ω;
measured at IR = 40 mA; see Fig.7
Vfr
forward recovery voltage
when switched to IF = 400 mA;
tr = 30 ns; see Fig.8
−
−
2
V
V
when switched to IF = 400 mA;
tr = 100 ns; see Fig.8
1.5
Note
1. Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
330
UNIT
K/W
K/W
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Rth j-a
500
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
3
Philips Semiconductors
Product specification
High-speed diode
BAS55
GRAPHICAL DATA
MBG441
MBH279
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
200
100
100
0
0
0
0
o
100
200
1
2
T
( C)
V
(V)
amb
F
Tj = 25 °C.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of forward
voltage; typical values.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
4
Philips Semiconductors
Product specification
High-speed diode
BAS55
MBH283
MBH282
2
10
2.0
handbook, halfpage
handbook, halfpage
I
C
d
R
(µA)
(pF)
1.5
10
(1)
(2)
1
1.0
0.5
−1
10
−2
10
0
0
o
0
100
200
10
20
30
T ( C)
j
V
(V)
R
(1) VR = 60 V; maximum values.
(2) VR = 60 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 10
5
Philips Semiconductors
Product specification
High-speed diode
BAS55
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 40 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Input signal: forward pulse duration tp = 300 ns; duty factor δ = 0.01.
Fig.8 Forward recovery voltage test circuit and waveforms.
6
1996 Sep 10
Philips Semiconductors
Product specification
High-speed diode
BAS55
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
3
1.1
max
0.48
0.38
0.1 M
A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.9 SOT23.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 10
7
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