BAS70 [NXP]
Schottky barrier double diodes; 肖特基势垒二极管双
| 型号： | BAS70 |
| 厂家： | 
NXP |
| 描述： | Schottky barrier double diodes |
| 文件： | 总8页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
age
BAS70 series
Schottky barrier (double) diodes
1999 Jun 01
Product specification
Supersedes data of 1996 Oct 01
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
FEATURES
PINNING
• Low forward current
DESCRIPTION
SOT23
BAS70-04 BAS70-05
• High breakdown voltage
• Guard ring protected
SOT143B
PIN
BAS70
BAS70-06
BAS70-07
• Small plastic SMD package
• Low diode capacitance.
(see Fig.1b) (see Fig.1c) (see Fig.1d) (see Fig.1e) (see Fig.2)
1
2
3
4
a1
n.c.
k1
a1
k2
a1
a2
k1
k2
k1
k2
a2
a1
APPLICATIONS
k1, a2
−
k1, k2
−
a1, a2
−
• Ultra high-speed switching
• Voltage clamping
−
• Protection circuits.
3
3
1
DESCRIPTION
2
Planar Schottky barrier diodes with an
integrated guard ring for stress
protection. Single diodes and double
diodes with different pinning are
available.
MGC485
c. BAS70-04
1
2
3
1
Top view
MGC482
The diodes BAS70, BAS70-04,
BAS70-05 and BAS70-06 are
encapsulated in a SOT23 small
plastic SMD package. The BAS70-07
is encapsulated in a SOT143B small
plastic SMD package.
2
a. Simplified outline SOT23.
MGC484
d. BAS70-05.
3
3
MARKING
2
n.c.
1
2
1
MARKING
TYPE NUMBER
MGC483
MGC486
CODE(1)
b. BAS70 single diode.
e. BAS70-06.
BAS70
73p
74p
75p
76p
77p
BAS70-04
BAS70-05
BAS70-06
BAS70-07
Fig.1 Simplified outline (SOT23) and symbols.
Note
1.
handbook, halfp
4
3
2
= -: Made in Hong Kong.
= t: Made in Malaysia.
4
3
2
1
1
Top view
MAM194
Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.
2
1999 Jun 01
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
70
V
−
−
−
−
IF
70
mA
mA
mA
°C
IFRM
IFSM
Tstg
tp ≤ 1 s; δ ≤ 0.5
70
tp < 10 ms
100
+150
150
+150
−65
−
Tj
junction temperature
°C
Tamb
operating ambient temperature
°C
−65
ELECTRICAL CHARACTERISTICS
amb = 25 °C unless otherwise specified.
T
SYMBOL PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 15 mA
410
750
1
mV
mV
V
IR
reverse current
VR = 50 V; note 1; see Fig.4
VR = 70 V; note 1; see Fig.4
IF = 5 mA
nA
µA
ps
100
10
τ
charge carrier life time (Krakauer
method)
100
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
K/W
Rth j-a
500
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
1999 Jun 01
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
GRAPHICAL DATA
MRA803
MRA805
2
2
10
10
I
R
I
(1)
F
(µA)
(mA)
10
10
(2)
(3)
1
1
1
10
1
10
2
3
10
(1)
(2) (3) (4)
2
10
10
0
0.2
0.4
0.6
0.8
1
0
20
40
60
80
V
(V)
V
(V)
R
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
MRA804
MGL762
3
10
2
C
d
r
dif
(pF)
(Ω)
1.5
2
10
1
0.5
0
10
1
10
−1
2
0
20
40
60
80
1
10
10
I
(mA)
V
(V)
F
R
f = 10 kHz.
f = 1 MHz.
Fig.5 Differential forward resistance as a function
of forward current; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 Jun 01
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 Jun 01
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 Jun 01
6
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 01
7
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© Philips Electronics N.V. 1999
SCA65
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Printed in The Netherlands
115002/05/pp8
Date of release: 1999 Jun 01
Document order number: 9397 750 05968
相关型号：
BAS70-
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
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