BAS85,135 [NXP]
BAS85 - Schottky barrier diode MELF 2-Pin;
| 型号： | BAS85,135 |
| 厂家： | 
NXP |
| 描述： | BAS85 - Schottky barrier diode MELF 2-Pin 二极管 |
| 文件： | 总9页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS85
Schottky barrier diode
Rev. 05 — 25 March 2009
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
Device SMD package with tin-plated metal discs at each end. It is suitable for
“automatic placement” and as such it can withstand immersion soldering.
1.2 Features
I Low forward voltage
I High breakdown voltage
I Guard-ring protected
I Hermetically sealed glass SMD package
1.3 Applications
I Ultra high-speed switching
I Voltage clamping
I Protection circuits
I Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
IF
Quick reference data
Parameter
Conditions
Min
Typ
Max
200
30
Unit
mA
V
forward current
reverse voltage
forward voltage
-
-
-
-
-
-
VR
VF
IF = 100 mA
800
mV
BAS85
NXP Semiconductors
Schottky barrier diode
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Graphic symbol
[1]
1
2
k
a
2
anode
sym001
[1] The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
BAS85
-
hermetically sealed glass surface-mounted package; SOD80C
2 connectors
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
BAS85
marking band
[1] grey: made in Philippines
purple: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
30
Unit
V
VR
reverse voltage
-
-
-
-
IF
forward current
200
200
300
mA
mA
mA
[1]
IF(AV)
IFRM
average forward current
repetitive peak forward
current
tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak
forward current
tp = 10 ms
-
5
A
Tj
junction temperature
ambient temperature
storage temperature
-
125
°C
°C
°C
Tamb
Tstg
−65
−65
+125
+150
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAS85_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 25 March 2009
2 of 9
BAS85
NXP Semiconductors
Schottky barrier diode
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from
junction to ambient
in free air
-
-
320
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
240
320
400
500
800
2.3
Unit
VF
forward voltage
IF = 0.1 mA
IF = 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mV
mV
mV
mV
mV
µA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V
[1]
IR
reverse current
Cd
diode capacitance VR = 1 V; f = 1 MHz
10
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BAS85_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 25 March 2009
3 of 9
BAS85
NXP Semiconductors
Schottky barrier diode
mld358
mra540
3
2
10
250
I
F(AV)
(mA)
I
F
(1) (2) (3)
(mA)
200
10
150
100
50
10
(1)
(2) (3)
1
−1
10
0
0
0.4
0.8
1.2
0
50
100
150
V
F
(V)
T
(°C)
amb
FR4 PCB, standard footprint
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig 1. Average forward current as a function of
ambient temperature; derating curve
Fig 2. Forward current as a function of forward
voltage; typical values
mgc681
mgc682
5
12
10
I
R
(1)
(2)
(nA)
C
(pF)
d
4
10
8
3
10
10
2
10
4
0
1
(3)
−1
10
0
10
20
30
0
10
20
30
V
R
(V)
V
(V)
R
(1) Tamb = 85 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
f = 1 MHz; Tamb = 25 °C
Fig 3. Reverse current as a function of reverse
voltage; typical values
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS85_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 25 March 2009
4 of 9
BAS85
NXP Semiconductors
Schottky barrier diode
8. Package outline
1.60
1.45
0.3
0.3
3.7
3.3
Dimensions in mm
06-03-16
Fig 5. Package outline SOD80C
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
2500
10000
BAS85
SOD80C 4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 13.
BAS85_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 25 March 2009
5 of 9
BAS85
NXP Semiconductors
Schottky barrier diode
10. Soldering
4.55
4.30
2.30
solder lands
solder paste
2.25 1.70 1.60
solder resist
occupied area
Dimensions in mm
0.90
(2x)
sod080c
Fig 6. Reflow soldering footprint SOD80C
6.30
4.90
2.70
1.90
solder lands
solder resist
occupied area
tracks
2.90 1.70
Dimensions in mm
sod080c
Fig 7. Wave soldering footprint SOD80C
BAS85_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 25 March 2009
6 of 9
BAS85
NXP Semiconductors
Schottky barrier diode
11. Revision history
Table 9.
Revision history
Document ID
BAS85_5
Release date
Data sheet status
Change notice
Supersedes
20090325
Product data sheet
-
BAS85_4
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 1 “Quick reference data”: added
• Section 4 “Marking”: enhanced
• Figure 5: superseded by minimized package outline drawing
• Section 9 “Packing information”: added
• Section 10 “Soldering”: added
• Section 12 “Legal information”: updated
BAS85_4
BAS85_3
BAS85_2
20000525
19961001
19960320
Product specification
Product specification
Product specification
-
-
-
BAS85_3
BAS85_2
-
BAS85_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 25 March 2009
7 of 9
BAS85
NXP Semiconductors
Schottky barrier diode
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS85_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 25 March 2009
8 of 9
BAS85
NXP Semiconductors
Schottky barrier diode
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Packing information. . . . . . . . . . . . . . . . . . . . . . 5
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . . 8
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 March 2009
Document identifier: BAS85_5
相关型号：
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DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
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