BAS86 [NXP]
Schottky barrier diode; 肖特基二极管
| 型号： | BAS86 |
| 厂家： | 
NXP |
| 描述： | Schottky barrier diode |
| 文件： | 总6页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
BAS86
Schottky barrier diode
1996 Oct 01
Product specification
Supersedes data of 1996 Mar 20
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
FEATURES
DESCRIPTION
• Low forward voltage
• High breakdown voltage
• Guard ring protected
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
• Hermetically-sealed small SMD
package.
APPLICATIONS
k
a
handbook, halfpage
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
MAM190
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
PARAMETER
continuous reverse voltage
continuous forward current
average forward current
CONDITIONS
MIN.
MAX.
50
UNIT
V
−
−
−
−
IF
200
200
500
5
mA
mA
mA
A
IF(AV)
IFRM
IFSM
Tstg
see Fig.2
repetitive peak forward current
non-repetitive peak forward current
storage temperature
tp ≤ 1 sec.; δ ≤ 0.5
tp = 10 ms
+150
125
+125
°C
°C
°C
−65
−
Tj
junction temperature
Tamb
operating ambient temperature
−65
1996 Oct 01
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
ELECTRICAL CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
see Fig.3
IF = 0.1 mA
IF = 1 mA
300
mV
380
450
600
900
5
mV
mV
mV
mV
µA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
trr
reverse current
VR = 40 V; see Fig.4; note 1
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
4
ns
RL = 100 Ω; measured at IR = 1 mA; see Fig.6
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
8
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
K/W
Rth j-a
320
Note
1. Refer to SOD80 standard mounting conditions.
1996 Oct 01
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
GRAPHICAL DATA
MSA892
MRA540
3
250
10
handbook, halfpage
handbook, halfpage
I
F(AV)
I
(1) (2) (3)
F
(mA)
200
(mA)
2
10
150
100
50
10
(1)
1
(2) (3)
1
0
10
0
50
100
150
0
0.4
0.8
1.2
o
V
(V)
T
( C)
F
amb
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.2 Derating curve.
MGC686
MGC687
5
12
10
handbook, halfpage
R
(nA)
handbook, halfpage
(1)
(2)
I
C
4
d
(pF)
10
3
8
4
0
10
2
10
10
1
(3)
−1
10
0
10
20
30
40
50
0
10
20
30
40
50
V
(V)
V
(V)
R
R
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
f = 1 MHz.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1996 Oct 01
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
andbook, halfpage
I
F
dI
F
dt
t
10%
90%
Q
r
I
R
t
MRC129 - 1
f
Fig.6 Reverse recovery definitions.
1996 Oct 01
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAS86
PACKAGE OUTLINE
1.60
1.45
O
0.3
0.3
3.7
3.3
MBA390 - 2
Dimensions in mm.
Cathode indicated by a grey band.
Fig.7 SOD80C.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 01
6
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