BAT120_03 [NXP]

Schottky barrier double diodes; 肖特基势垒二极管双
BAT120_03
型号: BAT120_03
厂家: NXP    NXP
描述:

Schottky barrier double diodes
肖特基势垒二极管双

二极管
文件: 总7页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
halfpage  
BAT120 series  
Schottky barrier double diodes  
Product specification  
2003 Aug 04  
Supersedes data of 2001 Aug 27  
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
BAT120 series  
FEATURES  
PINNING  
PIN  
Low switching losses  
BAT120  
Capability of absorbing very high surge current  
Fast recovery time  
A
C
S
1
2
3
4
k1  
n.c.  
k2  
a1  
n.c.  
a2  
a1  
n.c.  
k2  
Guard ring protected  
Plastic SMD package.  
a1, a2  
k1, k2  
k1, a2  
APPLICATIONS  
Low power switched-mode power supplies  
Rectification  
handbook, halfpage  
4
Polarity protection.  
DESCRIPTION  
Planar Schottky barrier double diodes encapsulated in a  
SOT223 plastic SMD package.  
MARKING  
1
2
3
MSB002 - 1  
Top view  
TYPE NUMBER  
MARKING CODE  
BAT120A  
BAT120C  
BAT120S  
AT120A  
AT120C  
AT120S  
Fig.1 Simplified outline (SOT223) and pin  
configuration.  
4
4
4
1
3
1
3
1
3
MGL172  
MGL173  
2 n.c.  
2 n.c.  
MGL171  
2 n.c.  
a. BAT120A.  
b. BAT120C.  
Fig.2 BAT120 diode configurations and symbols.  
c. BAT120S.  
2003 Aug 04  
2
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
BAT120 series  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
Per diode  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VR  
IF  
continuous reverse voltage  
continuous forward current  
25  
V
1
A
A
IFSM  
non-repetitive peak forward current  
tp < 10 ms; half sinewave;  
10  
JEDEC method  
IRSM  
Tstg  
Tj  
non-repetitive peak reverse current  
storage temperature  
tp = 100 µs  
0.5  
A
65  
+150  
125  
°C  
°C  
°C  
junction temperature  
Tamb  
operating ambient temperature  
65  
+125  
ELECTRICAL CHARACTERISTICS  
amb = 25 °C unless otherwise specified.  
T
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
reverse current  
see Fig.3  
IF = 100 mA  
260  
400  
80  
300  
450  
500  
1
mV  
mV  
µA  
IF = 1 A  
IR  
VR = 20 V; note 1; see Fig.4  
VR = 25 V; note 1; see Fig.4  
VR = 20 V; Tj = 100 °C; note 1  
f = 1 MHz; VR = 4 V; see Fig.5  
mA  
mA  
pF  
10  
Cd  
diode capacitance  
100  
Note  
1. Pulse test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient  
CONDITIONS  
VALUE  
100  
UNIT  
Rth j-a  
note 1  
K/W  
Note  
1. Refer to SOT223 standard mounting conditions.  
2003 Aug 04  
3
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
BAT120 series  
GRAPHICAL DATA  
MHB970  
MBL886  
5
handbook, halfpage  
4
10  
10  
handbook, halfpage  
I
(1)  
R
(µA)  
I
F
(mA)  
(2)  
(3)  
4
10  
3
10  
3
10  
(1)  
(2)  
2
10  
(3)  
(4)  
(4)  
2
10  
10  
10  
1
0
1
0
10  
20  
30  
V
(V)  
200  
400  
600  
800  
R
V
(mV)  
F
(1) Tamb = 125 °C.  
(2) Tamb = 100 °C.  
(3) Tamb = 75 °C.  
(4) Tamb = 25 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 100 °C.  
(3) Tamb = 75 °C.  
(4) Tamb = 25 °C.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
Fig.4 Reverse current as a function of reverse  
voltage; typical values.  
MBK571  
3
10  
handbook, halfpage  
C
d
(pF)  
2
10  
10  
0
10  
20  
30  
V
(V)  
R
f = 1 MHz; Tamb = 25 °C.  
Fig.5 Diode capacitance as a function of reverse  
voltage; typical values.  
2003 Aug 04  
4
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
BAT120 series  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
99-09-13  
SOT223  
SC-73  
2003 Aug 04  
5
Philips Semiconductors  
Product specification  
Schottky barrier double diodes  
BAT120 series  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2003 Aug 04  
6
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2003  
SCA75  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/04/pp7  
Date of release: 2003 Aug 04  
Document order number: 9397 750 11054  

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