BAT160STRL13 [NXP]
DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 4 PIN, Signal Diode;
| 型号： | BAT160STRL13 |
| 厂家： | 
NXP |
| 描述： | DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 4 PIN, Signal Diode 瞄准线 开关 光电二极管 |
| 文件： | 总8页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
BAT160 series
Schottky barrier double diodes
1998 Dec 08
Product specification
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
FEATURES
PINNING
PIN
• Low switching losses
BAT160
C
4
• Capability of absorbing very high
A
S
page
surge current
1
2
3
4
k1
n.c.
k2
a1
n.c.
a2
a1
n.c.
k2
1
3
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
MGL171
2 n.c.
a1, a2
k1, k2
k1, a2
Fig.2 BAT160A diode
configuration (symbol).
APPLICATIONS
• Low power switched-mode power
supplies
age
4
• Rectification
4
• Polarity protection.
page
1
3
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
MGL172
2 n.c.
Fig.3 BAT160C diode
configuration (symbol).
1
2
3
MSB002 - 1
Top view
MARKING
MARKING
TYPE NUMBER
CODE
4
page
BAT160A
BAT160C
BAT160S
AT160A
AT160C
AT160S
Fig.1 Simplified outline
(SOT223) and pin
configuration.
1
3
MGL173
2 n.c.
Fig.4 BAT160S diode
configuration (symbol).
1998 Dec 08
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
IF
continuous reverse voltage
continuous forward current
60
V
−
−
−
1
A
A
IFSM
non-repetitive peak forward current
tp = 8.3 ms; half sinewave;
JEDEC method
10
IRSM
Tstg
Tj
non-repetitive peak reverse current
storage temperature
tp = 100 µs
0.5
A
−
+150
150
°C
°C
−65
junction temperature
−
ELECTRICAL CHARACTERISTICS
amb = 25 °C unless otherwise specified.
T
SYMBOL PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
reverse current
see Fig.5
IF = 100 mA
IF = 1 A
400
650
850
350
8
mV
mV
mV
µA
IF = 2 A
IR
VR = 60 V; note 1; see Fig.6
VR = 60 V; Tj = 100 °C; note 1;
mA
see Fig.6
Cd
diode capacitance
f = 1 MHz; VR = 4 V; see Fig.7
60
pF
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
100
UNIT
Rth j-a
K/W
Note
1. Refer to SOT223 standard mounting conditions.
1998 Dec 08
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
GRAPHICAL DATA
MGL515
MGL514
4
5
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
I
F
(mA)
4
10
(1)
(2)
3
10
3
10
(3)
2
2
10
10
10
1
(1)
(2) (3)
(4)
(4)
10
1
−1
10
0
10
20
30
0
20
40
60
V
(V)
V
(V)
F
R
(1) Tamb = 125 °C.
(2) amb = 100 °C.
(3) Tamb = 75 °C.
(4) amb = 25 °C.
(1) Tamb = 125 °C.
(3) Tamb = 75 °C.
(4) amb = 25 °C.
T
T
(2)
Tamb = 100 °C.
T
Fig.5 Forward current as a function of forward
voltage; typical values.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
MGL513
3
10
handbook, halfpage
C
d
(pF)
2
10
10
0
20
40
60
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
1998 Dec 08
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
96-11-11
97-02-28
SOT223
1998 Dec 08
5
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Dec 08
6
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
NOTES
1998 Dec 08
7
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135106/00/01/pp8
Date of release: 1998 Dec 08
Document order number: 9397 750 04638
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