BAT46WH,115 [NXP]
BAT46WH - Single Schottky barrier diode SOD-123 2-Pin;
| 型号： | BAT46WH,115 |
| 厂家： | 
NXP |
| 描述： | BAT46WH - Single Schottky barrier diode SOD-123 2-Pin 测试 光电二极管 |
| 文件： | 总12页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT46WH
SOD123F
Single Schottky barrier diode
Rev. 2 — 28 November 2011
Product data sheet
1. Product profile
1.1 General description
Single planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small and flat lead SOD123F Surface-Mounted Device (SMD) plastic
package.
1.2 Features and benefits
Low forward voltage
Low capacitance
Reverse voltage VR 100 V
Small and flat lead SMD plastic package
AEC-Q101 qualified
1.3 Applications
High-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
VR
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
850
4
Unit
V
reverse voltage
forward voltage
reverse current
-
-
-
-
-
-
[1]
[1]
VF
IF = 250 mA
VR = 75 V
mV
A
IR
[1] Pulse test: tp 300 s; 0.02.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Graphic symbol
[1]
1
2
2
anode
1
2
sym001
[1] The marking bar indicates the cathode.
BAT46WH
NXP Semiconductors
Single Schottky barrier diode
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BAT46WH
plastic surface-mounted package; 2 leads
SOD123F
4. Marking
Table 4.
Marking codes
Type number
Marking code
BAT46WH
DB
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
Min
Max
100
250
2.5
Unit
V
reverse voltage
forward current
-
-
-
IF
mA
A
[1]
IFSM
non-repetitive peak
forward current
square wave;
tp < 10 ms
[2][4]
[3][4]
Ptot
total power dissipation
Tamb 25 C
-
440
mW
mW
C
-
780
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
55
65
+150
+150
C
C
[1] Tj = 25 C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1][3]
[2][3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
285
160
K/W
K/W
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
2 of 12
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Single Schottky barrier diode
Table 6.
Thermal characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max Unit
25 K/W
[4]
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Reflow soldering is the only recommended soldering method.
[4] Soldering point of cathode tab.
006aac394
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.5
2
10
0.33
0.2
0.25
0.1
0.05
0.01
10
0.02
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac395
3
10
Z
th(j-a)
duty cycle =
1
(K/W)
2
0.75
10
0.5
0.33
0.2
0.25
0.1
10
0.05
0.01
0.02
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
3 of 12
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NXP Semiconductors
Single Schottky barrier diode
7. Characteristics
Table 7.
Characteristics
T
amb = 25 C unless otherwise specified.
Symbol Parameter
VF forward voltage
Conditions
Min
Typ
Max Unit
[1]
IF = 0.1 mA
-
-
-
-
-
-
175
315
-
200
350
470
475
560
850
mV
mV
mV
mV
mV
mV
IF = 10 mA
IF = 10 mA; Tj = 40 C
IF = 50 mA
415
-
IF = 50 mA; Tj = 40 C
IF = 250 mA
710
[1]
IR
reverse current
VR = 1.5 V
-
-
-
-
-
-
-
-
-
-
-
0.2
0.5
12
0.8
20
2
A
A
A
A
A
A
A
A
A
A
A
VR = 1.5 V; Tj = 60 C
VR = 10 V
-
0.3
VR = 10 V; Tj = 60 C
VR = 50 V
-
0.7
VR = 50 V; Tj = 60 C
VR = 75 V
-
44
4
1
-
VR = 75 V; Tj = 60 C
VR = 100 V
80
9
2
-
VR = 100 V; Tj = 60 C
VR = 100 V; Tj = 85 C
f = 1 MHz
120
600
-
Cd
diode capacitance
VR = 0 V
-
-
-
-
39
21
-
pF
pF
ns
VR = 1 V
-
[2]
trr
reverse recovery time
5.9
[1] Pulse test: tp 300 s; 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
4 of 12
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NXP Semiconductors
Single Schottky barrier diode
006aac396
006aac397
−2
−3
−4
−5
−6
−7
−8
−9
1
10
(3)
(5)
I
R
(4)
I
(A)
10
F
(1)
(A)
−1
10
(1)
(2)
(2)
(3)
10
10
10
10
10
10
−2
10
(4)
(4)
(3)
(5)
−3
10
10
(5)
−4
0.0
0.4
0.8
1.2
0
20
40
60
80
R
100
V
(V)
V (V)
F
(1) Tamb = 150 C
(2) Tamb = 125 C
(3) Tamb = 85 C
(1)
T
amb = 125 C
(2) Tamb = 85 C
(3) Tamb = 60 C
(4)
T
amb = 25 C
(4)
Tamb = 25 C
(5) Tamb = 40 C
(5) Tamb = 40 C
Fig 3. Forward current as a function of forward
voltage; typical values
Fig 4. Reverse current as a function of reverse
voltage; typical values
006aac398
35
C
d
(pF)
30
25
20
15
10
5
0
0
20
40
60
80
100
V
(V)
R
f = 1 MHz; Tamb = 25 C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
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Single Schottky barrier diode
006aac399
006aac400
0.25
0.3
P
R(AV)
(W)
(1)
(2)
I
F(AV)
(A)
0.20
0.15
0.10
0.05
0.0
0.2
(1)
(2)
(3)
(3)
(4)
0.1
0.0
(4)
0
20
40
60
80
100
0
25
50
75
100
125
150
T (°C)
amb
175
V
(V)
R
Tj = 125 C
FR4 PCB, standard footprint
(1) = 1
Tj = 150 C
(2) = 0.9
(3) = 0.8
(4) = 0.5
(1) = 1; DC
(2) = 0.5; f = 20 kHz
(3) = 0.2; f = 20 kHz
(4) = 0.1; f = 20 kHz
Fig 6. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig 7. Average forward current as a function of
ambient temperature; typical values
006aac401
006aac402
0.3
0.3
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
0.2
0.2
(2)
(2)
(3)
(4)
(3)
(4)
0.1
0.0
0.1
0.0
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
sp
175
T
amb
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 C
(1) = 1; DC
Tj = 150 C
(1) = 1; DC
(2) = 0.5; f = 20 kHz
(3) = 0.2; f = 20 kHz
(4) = 0.1; f = 20 kHz
(2) = 0.5; f = 20 kHz
(3) = 0.2; f = 20 kHz
(4) = 0.1; f = 20 kHz
Fig 8. Average forward current as a function of
ambient temperature; typical values
Fig 9. Average forward current as a function of
solder point temperature; typical values
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
6 of 12
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NXP Semiconductors
Single Schottky barrier diode
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
F
t
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 10. Reverse recovery time test circuit and waveforms
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 11. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are
calculated according to the equations: IFAV = IM with IM defined as peak current,
IRMS = IFAV at DC, and
with IRMS defined as RMS current.
IRMS = IM
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
7 of 12
BAT46WH
NXP Semiconductors
Single Schottky barrier diode
9. Package outline
1.7
1.5
1.2
1.0
1
0.55
0.35
3.6 2.7
3.4 2.5
2
0.70
0.55
0.25
0.10
Dimensions in mm
04-11-29
Fig 12. Package outline SOD123F
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
10000
BAT46WH
SOD123F 4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 13. Reflow soldering footprint SOD123F
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
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NXP Semiconductors
Single Schottky barrier diode
12. Revision history
Table 9.
Revision history
Document ID
BAT46WH v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20111128
Product data sheet
-
BAT46WH v.1
• Table 7: unit for reverse current IR at VR = 50 V corrected to A
• Table 7: conditions of reverse voltage VR corrected
• Section 13 “Legal information”: updated
BAT46WH v.1
20100727
Product data sheet
-
-
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
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NXP Semiconductors
Single Schottky barrier diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
10 of 12
BAT46WH
NXP Semiconductors
Single Schottky barrier diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAT46WH
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 November 2011
11 of 12
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Single Schottky barrier diode
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 November 2011
Document identifier: BAT46WH
相关型号：
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