BAT54CWT/R [NXP]
0.2A, 30V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3;
| 型号： | BAT54CWT/R |
| 厂家： | 
NXP |
| 描述： | 0.2A, 30V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3 光电二极管 |
| 文件： | 总5页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BAT54W series
Schottky barrier (double) diodes
1996 Mar 19
Product specification
Supersedes data of October 1993
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
FEATURES
PINNING
PIN
• Low forward voltage
• Guard ring protected
• Very small SMD package.
BAT54
W
AW
CW
a1
SW
a1
3
1
2
3
a
n.c.
k
k1
k2
1
2
a2
k2
APPLICATIONS
MLC360
a1, a2 k1, k2 k1, a2
• Ultra high-speed switching
• Voltage clamping
Fig.3 BAT54AW diode
configuration (symbol).
3
• Protection circuits
• Blocking diodes.
DESCRIPTION
3
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
1
2
1
2
MBC870
Top view
MLC359
Fig.1 Simplified outline
(SOT323) and pin
configuration.
Fig.4 BAT54CW diode
configuration (symbol).
MARKING
MARKING
TYPE NUMBER
CODE
BAT54W
BAT54AW
BAT54CW
BAT54SW
L4
42
43
44
3
3
1
2
n.c.
1
2
MLC357
MLC358
Fig.2 BAT54W single diode
configuration (symbol).
Fig.5 BAT54SW diode
configuration (symbol).
1996 Mar 19
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
30
V
−
−
−
−
−
IF
200
300
mA
mA
mA
mW
°C
IFRM
IFSM
Ptot
tp ≤ 1 s; δ ≤ 0.5
tp < 10 ms
amb ≤ 25 °C
600
T
200
Tstg
+150
125
−65
−
Tj
junction temperature
°C
Tamb
operating ambient temperature
+125
°C
−65
ELECTRICAL CHARACTERISTICS
amb = 25 °C unless otherwise specified.
T
SYMBOL PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.6
IF = 0.1 mA
IF = 1 mA
240
320
400
500
800
2
mV
mV
mV
mV
mV
µA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
trr
reverse current
VR = 25 V; note 1; see Fig.7
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA: see Fig.9
5
ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.8
10
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
625
UNIT
Rth j-a
K/W
Note
1. Refer to SOT323 standard mounting conditions.
1996 Mar 19
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
GRAPHICAL DATA
MSA892
MSA893
(1)
3
2
3
10
10
handbook, halfpage
I
I
(1) (2) (3)
R
(µA)
F
(mA)
2
10
10
(2)
10
10
1
(1)
(2) (3)
1
1
(3)
1
10
10
0
0.4
0.8
1.2
0
10
20
30
V
(V)
V
(V)
R
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MSA891
15
C
d
(pF)
andbook, halfpage
I
F
10
dI
F
dt
5
0
t
10%
90%
Q
r
I
R
t
0
10
20
30
MRC129 - 1
f
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Reverse recovery definitions.
1996 Mar 19
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
PACKAGE OUTLINE
2.2
1.8
1.35
1.15
A
B
X
0.25
0.10
2.2
2.0
M
0.2
B
3
0.2
1.0
0.8
1.1
max
0.1
0.0
0.40
0.30
1
2
0.2 M
A
0.3
0.1
0.65
detail X
MBC871
1.3
Dimensions in mm.
Fig.10 SOT323.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 19
5
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