BAT721 [NXP]
Schottky barrier double diodes; 肖特基势垒二极管双型号: | BAT721 |
厂家: | NXP |
描述: | Schottky barrier double diodes |
文件: | 总8页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
age
BAT721 series
Schottky barrier (double) diodes
1999 May 06
Product specification
Supersedes data of 1998 Jan 21
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
FEATURES
PINNING
PIN
• Ultra high switching speed
• Low forward voltage
BAT721
3
A
C
S
• Guard ring protected
1
2
1
2
3
a
n.c.
k
k1
k2
a1
a2
a1
k2
• Small plastic SMD package.
MLC360
a1, a2 k1, k2 k1, a2
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
Fig.3 BAT721A diode
configuration (symbol).
3
• Protection circuits.
DESCRIPTION
3
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
1
2
1
2
MLC359
Top view
MGC421
Fig.1 Simplified outline
(SOT23) and pin
configuration.
Fig.4 BAT721C diode
configuration (symbol).
MARKING
TYPE
NUMBER
MARKING
CODE(1)
BAT721
L7
L8
L9
L0
BAT721A
BAT721C
BAT721S
3
3
1
2
1
2
n.c.
MLC357
MLC358
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
Fig.5 BAT721S diode
configuration (symbol).
Fig.2 BAT721 single diode
configuration (symbol).
1999 May 06
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
CONDITIONS
MIN.
MAX.
40
UNIT
V
−
−
−
IF
200
1
mA
A
IFSM
tp = 8.3 ms half sinewave;
JEDEC method
Tstg
Tj
storage temperature
junction temperature
+150
125
°C
°C
−65
−
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
continuous forward voltage
see Fig.6
IF = 10 mA
−
300
420
550
15
mV
mV
mV
µA
IF = 100 mA
−
IF = 200 mA
−
IR
continuous reverse current
diode capacitance
VR = 30 V; see Fig.7
VR = 30 V; Tj = 100 °C; see Fig.7
f = 1 MHz; VR = 0; see Fig.8
−
mA
pF
−
3
Cd
40
50
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
500
UNIT
Rth j-a
note 1
K/W
Note
1. Refer to SOT23 standard mounting conditions.
1999 May 06
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
GRAPHICAL DATA
MBK575
MBK576
3
10
1
handbook, halfpage
handbook, halfpage
I
I
F
R
(mA)
(mA)
2
10
(1)
−1
10
(1)
(2)
10
(2)
(3)
−2
10
(3)
1
−1
−3
10
10
150
250
350
450
550
0
10
20
30
40
(V)
V
R
V
(mV)
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MBK574
2
10
handbook, halfpage
C
d
(pF)
10
1
0
10
20
30
40
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 06
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 06
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 06
6
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT721 series
NOTES
1999 May 06
7
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SCA64
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Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 May 06
Document order number: 9397 750 05916
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