BAT74V [NXP]

Schottky barrier double diode; 肖特基势垒二极管双
BAT74V
型号: BAT74V
厂家: NXP    NXP
描述:

Schottky barrier double diode
肖特基势垒二极管双

整流二极管 测试 光电二极管
文件: 总8页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BAT74V  
Schottky barrier double diode  
Product specification  
2002 Sep 02  
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74V  
FEATURES  
PINNING  
PIN  
Low forward voltage  
DESCRIPTION  
Low capacitance  
1
2
3
4
5
6
anode 1  
Ultra small SMD plastic package  
not connected  
cathode 2  
anode 2  
Flat leads: excellent coplanarity and improved thermal  
behaviour.  
not connected  
cathode 1  
APPLICATIONS  
Ultra high-speed switching  
Voltage clamping  
handbook, halfpage  
6
5
4
Line termination  
6
1
4
3
Inverse polarity protection.  
DESCRIPTION  
Planar Schottky barrier double diode with an integrated  
guard ring for stress protection.  
1
Top view  
Marking code: 74.  
2
3
MAM461  
Two separate dies encapsulated in a SOT666 ultra small  
SMD plastic package.  
Fig.1 Simplified outline (SOT666) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
30  
UNIT  
VR  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
non-repetitive peak forward current  
total power dissipation  
V
IF  
200  
mA  
mA  
mA  
mW  
°C  
IFRM  
IFSM  
Ptot  
Tstg  
Tj  
tp 1 s; δ ≤ 0.5  
tp < 10 ms  
300  
600  
T
amb 25 °C  
230  
storage temperature  
65  
+150  
125  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
+125  
°C  
2002 Sep 02  
2
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74V  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IF = 0.1 mA  
MAX.  
UNIT  
VF  
continuous forward voltage  
240  
320  
400  
500  
800  
2
mV  
mV  
mV  
mV  
mV  
µA  
IF = 1 mA  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA; note 1; see Fig.2  
VR = 25 V; note 1; see Fig.3  
VR = 1 V; f = 1 MHz; see Fig.4  
IR  
reverse current  
Cd  
diode capacitance  
10  
pF  
Note  
1. Pulse test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
note 1  
416  
K/W  
Note  
1. Refer to SOT666 standard mounting conditions.  
Soldering  
The only recommended soldering method is reflow soldering.  
2002 Sep 02  
3
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74V  
GRAPHICAL DATA  
MSA892  
MSA893  
(1)  
3
2
10  
3
10  
handbook, halfpage  
I
I
R
(µA)  
(1) (2) (3)  
F
(mA)  
2
10  
10  
(2)  
10  
10  
(1)  
1
(2) (3)  
1
1
(3)  
10  
1
10  
0
10  
20  
30  
0
0.4  
0.8  
1.2  
V
(V)  
R
V
(V)  
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3)  
Tamb = 25 °C.  
(3) Tamb = 25 °C.  
Fig.2 Forward current as a function of forward  
voltage; typical values.  
Fig.3 Reverse current as a function of reverse  
voltage; typical values.  
MSA891  
15  
handbook, halfpage  
C
d
(pF)  
10  
5
0
0
10  
20  
30  
V
(V)  
R
f = 1 MHz; Tamb = 25 °C.  
Fig.4 Diode capacitance as a function of reverse  
voltage; typical values.  
2002 Sep 02  
4
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74V  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
01-01-04  
01-08-27  
SOT666  
2002 Sep 02  
5
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74V  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise spec  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Sep 02  
6
Philips Semiconductors  
Product specification  
Schottky barrier double diode  
BAT74V  
NOTES  
2002 Sep 02  
7
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/01/pp8  
Date of release: 2002 Sep 02  
Document order number: 9397 750 10101  

相关型号:

BAT74V,115

BAT74V - Schottky barrier double diode SOT 6-Pin
NXP

BAT74VT/R

ARRAY OF INDEPENDENT DIODES,SOT-666
NXP

BAT74_01

Schottky barrier double diode
NXP

BAT750

0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

BAT750

Schottky barrier diode
BL Galaxy Ele

BAT750

Surface Mount Schottky Barrier Rectifier
WEITRON

BAT750

SOT23 Schottky barrier diode
ZETEX

BAT750

SCHOTTKY BARRIER DIODE
PANJIT

BAT750

Very Low Forward Voltage Drop, High Conductance
TYSEMI

BAT750-7

Rectifier Diode, Schottky, 1 Element, 0.75A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3
DIODES

BAT750-7-F

0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

BAT750-GS08

DIODE 0.75 A, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
VISHAY