BAT854SW,115 [NXP]

BAT854W series - Schottky barrier (double) diodes SC-70 3-Pin;
BAT854SW,115
型号: BAT854SW,115
厂家: NXP    NXP
描述:

BAT854W series - Schottky barrier (double) diodes SC-70 3-Pin

光电二极管
文件: 总7页 (文件大小:63K)
中文:  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
halfpage  
M
BAT854W series  
Schottky barrier (double) diodes  
Product data sheet  
2001 Feb 27  
NXP Semiconductors  
Product data sheet  
Schottky barrier (double) diodes  
BAT854W series  
FEATURES  
PINNING  
PIN  
Very low forward voltage  
Very low reverse current  
Guard ring protected  
SYMBOL  
3
BAT854W  
1
2
n.c.  
1
2
3
a
Very small SMD plastic package.  
MLC357  
n.c.  
k
Fig.2 BAT854W single diode  
configuration (symbol).  
APPLICATIONS  
BAT854AW  
Ultra high-speed switching  
Voltage clamping  
1
2
3
k1  
k2  
Protection circuits  
Blocking diodes  
a1,a2  
3
BAT854CW  
Low power consumption  
applications (e.g. hand-held  
applications).  
1
2
3
a1  
1
2
a2  
MLC360  
k1, k2  
Fig.3 BAT854AW diode  
configuration (symbol).  
BAT854SW  
DESCRIPTION  
1
2
3
a1  
Planar Schottky barrier diodes  
encapsulated in a SOT323 very small  
SMD plastic package. Single diodes  
and double diodes with different  
pinning are available.  
k2  
k1, a2  
3
1
2
MARKING  
MLC359  
MARKING  
TYPE NUMBER  
3
CODE  
Fig.4 BAT854CW diode  
configuration (symbol).  
BAT854W  
81  
82  
83  
84  
BAT854AW  
BAT854CW  
BAT854SW  
1
2
3
MBC870  
Top view  
1
2
MLC358  
Fig.1 Simplified outline  
SOT323 and pin  
Fig.5 BAT854SW diode  
configuration (symbol).  
configuration.  
2001 Feb 27  
2
NXP Semiconductors  
Product data sheet  
Schottky barrier (double) diodes  
BAT854W series  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
Per diode  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VR  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
40  
V
IF  
200  
300  
1
mA  
mA  
A
IFRM  
IFSM  
tp 1 s; δ ≤ 0.5  
non-repetitive peak forward current t = 8.3 ms half sinewave;  
JEDEC method  
Tstg  
Tj  
storage temperature  
65  
+150  
150  
°C  
°C  
°C  
junction temperature  
Tamb  
operating ambient temperature  
65  
+150  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Per diode  
VF  
continuous forward voltage  
see Fig.6  
IF = 0.1 mA  
200  
260  
340  
mV  
mV  
mV  
mV  
mV  
μA  
IF = 1 mA  
IF = 10 mA  
IF = 30 mA  
420  
550  
0.5  
20  
IF = 100 mA  
IR  
continuous reverse current  
diode capacitance  
VR = 25 V; note 1; see Fig.7  
VR = 1 V; f = 1 MHz; see Fig.8  
Cd  
pF  
Note  
1. Pulse test: tp = 300 μs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient note 1  
625  
K/W  
Note  
1. Refer to SOT323 standard mounting conditions.  
2001 Feb 27  
3
 
 
NXP Semiconductors  
Product data sheet  
Schottky barrier (double) diodes  
BAT854W series  
GRAPHICAL DATA  
MLD547  
MLD546  
3
3
10  
10  
handbook, halfpage  
handbook, halfpage  
I
I
F
R
(1)  
(2)  
(mA)  
(μA)  
2
2
10  
10  
10  
10  
1
(1)  
(2) (3)  
1
(3)  
1  
1  
10  
10  
0
0.4  
0.8  
1.2  
0
10  
20  
30  
40  
V
(V)  
V
(V)  
R
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3)  
T
amb = 25 °C.  
(3) Tamb = 25 °C.  
Fig.6 Forward current as a function of forward  
voltage; typical values.  
Fig.7 Reverse current as a function of reverse  
voltage; typical values.  
MLD548  
20  
handbook, halfpage  
C
d
(pF)  
16  
12  
8
4
0
0
10  
20  
30  
40  
V
(V)  
R
f = 1 MHz; Tamb = 25 °C.  
Fig.8 Diode capacitance as a function of reverse  
voltage; typical values.  
2001 Feb 27  
4
NXP Semiconductors  
Product data sheet  
Schottky barrier (double) diodes  
BAT854W series  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT323  
D
B
E
A
X
H
y
v M  
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B  
1
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1  
0.8  
0.4  
0.3  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT323  
SC-70  
97-02-28  
2001 Feb 27  
5
NXP Semiconductors  
Product data sheet  
Schottky barrier (double) diodes  
BAT854W series  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2001 Feb 27  
6
 
 
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/01/pp7  
Date of release: 2001 Feb 27  
Document order number: 9397 750 07935  

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