BAT854SW,115 [NXP]
BAT854W series - Schottky barrier (double) diodes SC-70 3-Pin;型号: | BAT854SW,115 |
厂家: | NXP |
描述: | BAT854W series - Schottky barrier (double) diodes SC-70 3-Pin 光电二极管 |
文件: | 总7页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M
BAT854W series
Schottky barrier (double) diodes
Product data sheet
2001 Feb 27
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
FEATURES
PINNING
PIN
• Very low forward voltage
• Very low reverse current
• Guard ring protected
SYMBOL
3
BAT854W
1
2
n.c.
1
2
3
a
• Very small SMD plastic package.
MLC357
n.c.
k
Fig.2 BAT854W single diode
configuration (symbol).
APPLICATIONS
BAT854AW
• Ultra high-speed switching
• Voltage clamping
1
2
3
k1
k2
• Protection circuits
• Blocking diodes
a1,a2
3
BAT854CW
• Low power consumption
applications (e.g. hand-held
applications).
1
2
3
a1
1
2
a2
MLC360
k1, k2
Fig.3 BAT854AW diode
configuration (symbol).
BAT854SW
DESCRIPTION
1
2
3
a1
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
SMD plastic package. Single diodes
and double diodes with different
pinning are available.
k2
k1, a2
3
1
2
MARKING
MLC359
MARKING
TYPE NUMBER
3
CODE
Fig.4 BAT854CW diode
configuration (symbol).
BAT854W
81
82
83
84
BAT854AW
BAT854CW
BAT854SW
1
2
3
MBC870
Top view
1
2
MLC358
Fig.1 Simplified outline
SOT323 and pin
Fig.5 BAT854SW diode
configuration (symbol).
configuration.
2001 Feb 27
2
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
40
V
IF
200
300
1
mA
mA
A
IFRM
IFSM
tp ≤ 1 s; δ ≤ 0.5
non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
Tstg
Tj
storage temperature
−65
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
+150
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
continuous forward voltage
see Fig.6
IF = 0.1 mA
200
260
340
−
−
mV
mV
mV
mV
mV
μA
IF = 1 mA
−
IF = 10 mA
−
IF = 30 mA
420
550
0.5
20
IF = 100 mA
−
IR
continuous reverse current
diode capacitance
VR = 25 V; note 1; see Fig.7
VR = 1 V; f = 1 MHz; see Fig.8
−
Cd
−
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
625
K/W
Note
1. Refer to SOT323 standard mounting conditions.
2001 Feb 27
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
GRAPHICAL DATA
MLD547
MLD546
3
3
10
10
handbook, halfpage
handbook, halfpage
I
I
F
R
(1)
(2)
(mA)
(μA)
2
2
10
10
10
10
1
(1)
(2) (3)
1
(3)
−1
−1
10
10
0
0.4
0.8
1.2
0
10
20
30
40
V
(V)
V
(V)
R
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3)
T
amb = 25 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MLD548
20
handbook, halfpage
C
d
(pF)
16
12
8
4
0
0
10
20
30
40
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
2001 Feb 27
4
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
2001 Feb 27
5
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
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infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Feb 27
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2001 Feb 27
Document order number: 9397 750 07935
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