BAV199T/R [NXP]
DIODE 0.16 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode;
| 型号： | BAV199T/R |
| 厂家： | 
NXP |
| 描述： | DIODE 0.16 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode 二极管 |
| 文件： | 总8页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BAV199
Low-leakage double diode
Product data sheet
2001 Oct 12
Supersedes data of 1999 May 11
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
FEATURES
MARKING
PINNING
• Plastic SMD package
MARKING
CODE(1)
PIN
1
DESCRIPTION
TYPE NUMBER
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
anode
BAV199
JY∗
2
cathode
• Continuous reverse voltage:
max. 75 V
3
anode; cathode
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATION
handbook, 4 columns
2
1
• Low-leakage current applications in
surface mounted circuits.
2
1
DESCRIPTION
3
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
3
MAM107
Top view
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
−
−
85
V
75
V
IF
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
160
140
500
mA
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
−
−
−
−
4
A
tp = 1 ms
1
A
tp = 1 s
0.5
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
2
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
−
−
−
−
900
mV
1000
1100
1250
mV
mV
mV
IF = 150 mA
IR
reverse current
see Fig.5
VR = 75 V
0.003
3
5
nA
nA
pF
µs
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
80
−
Cd
trr
diode capacitance
2
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
0.8
3
measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
K/W
K/W
360
500
Rth j-a
note 1
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
3
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
GRAPHICAL DATA
MLB752 - 1
MLB756
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
200
(1)
(2)
(3)
single diode loaded
100
100
double diode loaded
0
0
0
0
100
200
o
0.4
0.8
1.2
1.6
T
( C)
amb
V
(V)
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on a FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage; per diode.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
2001 Oct 12
4
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
MLB754
MBG526
2
10
2
handbook, halfpage
handbook, halfpage
I
R
(nA)
(1)
10
C
d
(pF)
1
1
1
10
(2)
2
10
0
0
3
10
5
10
15
20
0
50
100
150
200
V
(V)
R
o
T
( C)
j
VR = 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature; per diode.
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
5
2001 Oct 12
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2001 Oct 12
6
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Oct 12
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp8
Date of release: 2001 Oct 12
Document order number: 9397 750 08764
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