BAV23S [NXP]
General purpose double diode; 通用双二极管型号: | BAV23S |
厂家: | NXP |
描述: | General purpose double diode |
文件: | 总8页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAV23S
General purpose double diode
1999 May 05
Product specification
Supersedes data of 1998 Jan 08
Philips Semiconductors
Product specification
General purpose double diode
BAV23S
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
The BAV23S consists of two general
purpose diodes connected in series
fabricated in planar technology, and
encapsulated in the small SOT23
plastic SMD package.
DESCRIPTION
1
2
3
anode
cathode
• Continuous reverse voltage:
max. 200 V
common connection
• Repetitive peak reverse voltage:
max. 250 V
handbookpage
2
1
• Repetitive peak forward current:
max. 625 mA.
2
1
APPLICATIONS
3
• General purpose where high
breakdown voltages are required.
3
MAM232
Marking code: L31.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse
voltage
−
−
250
V
V
VRRM
repetitive peak reverse
voltage
series connection
500
VR
VR
IF
continuous reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
−
−
200
400
225
125
625
V
V
series connection
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
mA
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge;
see Fig.4
t = 1 µs
−
−
−
−
9
A
t = 100 µs
3
A
t = 10 ms
1.7
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05
2
Philips Semiconductors
Product specification
General purpose double diode
BAV23S
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 100 mA
1.0
V
V
IF = 200 mA
1.25
VF
forward voltage
reverse current
reverse current
series connection; see Fig.3
IF = 100 mA
2.0
2.5
V
V
IF = 200 mA
IR
see Fig.5
VR = 200 V
100
100
nA
VR = 200 V; Tj = 150 °C
series connection
VR = 400 V
mA
IR
100
100
5
nA
mA
pF
ns
VR = 400 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured
at IR = 3 mA; see Fig.7
50
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
360
500
K/W
K/W
Rth j-a
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05
3
Philips Semiconductors
Product specification
General purpose double diode
BAV23S
GRAPHICAL DATA
MBG384
MBD033
600
300
F
handbook, halfpage
I
I
F
(mA)
(mA)
(1)
(2)
(3)
400
200
single diode loaded
double diode loaded
200
100
0
0
0
1
2
V
(V)
0
100
200
o
F
T
( C)
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 05
4
Philips Semiconductors
Product specification
General purpose double diode
BAV23S
MBG381
MBG447
2
1.0
10
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.8
(µA)
10
(1)
(2)
1
0.6
0.4
1
10
2
10
0.2
0
o
0
100
200
2
4
6
8
T ( C)
j
V
(V)
R
(1) VR = 200 V; maximum values.
(2) R = 200 V; typical values.
f = 1 MHz; Tj = 25 °C.
V
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
5
1999 May 05
Philips Semiconductors
Product specification
General purpose double diode
BAV23S
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 05
6
Philips Semiconductors
Product specification
General purpose double diode
BAV23S
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 05
7
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© Philips Electronics N.V. 1999
SCA64
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115002/00/04/pp8
Date of release: 1999 May 05
Document order number: 9397 750 05935
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