BAV23 [NXP]
General purpose double diode; 通用双二极管
| 型号： | BAV23 |
| 厂家： | 
NXP |
| 描述： | General purpose double diode |
| 文件： | 总7页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAV23
General purpose double diode
1996 Sep 17
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
General purpose double diode
BAV23
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
The BAV23 consists of two general
purpose diodes fabricated in planar
technology, and encapsulated in the
small plastic SMD SOT143 package.
The diodes are not connected.
DESCRIPTION
1
2
3
4
cathode (k1)
cathode (k2)
anode (a2)
anode (a1)
• Continuous reverse voltage:
max. 200 V
• Repetitive peak reverse voltage:
max. 250 V
• Repetitive peak forward current:
max. 625 mA.
handbook, hge
4
3
2
4
3
2
APPLICATIONS
• General purpose where high
breakdown voltages are required.
1
1
MAM059
Top view
Marking code: L30.
Fig.1 Simplified outline (SOT143) and symbol.
1996 Sep 17
2
Philips Semiconductors
Product specification
General purpose double diode
BAV23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
500
200
400
225
UNIT
VRRM
VRRM
VR
repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
continuous reverse voltage
continuous forward current
−
V
V
V
V
series connection
−
−
−
VR
series connection
IF
single diode loaded; see Fig.2;
note 1
mA
mA
mA
double diode loaded; see Fig.2;
note 1
−
−
125
625
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
9
3
A
t = 100 µs
t = 10 ms
A
−
1.7
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
250
+150
150
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
3
Philips Semiconductors
Product specification
General purpose double diode
BAV23
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 100 mA
−
−
1.0
V
V
IF = 200 mA
1.25
VF
forward voltage
reverse current
reverse current
series connection; see Fig.3
IF = 100 mA
−
−
2.0
2.5
V
V
IF = 200 mA
IR
see Fig.5
VR = 200 V
−
−
−
−
−
−
−
100
100
nA
VR = 200 V; Tj = 150 °C
series connection
VR = 400 V
µA
IR
100
100
5
nA
µA
pF
pF
VR = 400 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
diode capacitance
series connection; f = 1 MHz;
VR = 0; see Fig.6
2.5
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
−
50
ns
measured at IR = 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
360
UNIT
Rth j-tp
Rth j-a
K/W
K/W
500
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
4
Philips Semiconductors
Product specification
General purpose double diode
BAV23
GRAPHICAL DATA
MBD033
MBG384
300
F
600
handbook, halfpage
I
I
F
(mA)
(mA)
(1)
(2)
(3)
200
400
single diode loaded
double diode loaded
100
200
0
0
0
1
2
0
100
200
o
V
(V)
T
( C)
F
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
5
Philips Semiconductors
Product specification
General purpose double diode
BAV23
MBG381
MBG447
2
10
1.0
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.8
(µA)
10
(1)
(2)
1
1
0.6
0.4
10
10
2
0.2
0
o
0
100
200
2
4
6
8
T ( C)
j
V
(V)
R
(1) VR = 200 V; maximum values.
(2) VR = 200 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
6
1996 Sep 17
Philips Semiconductors
Product specification
General purpose double diode
BAV23
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.8 SOT143.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 17
7
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