BAV45 [NXP]

Picoampere diode; Picoampere二极管
BAV45
型号: BAV45
厂家: NXP    NXP
描述:

Picoampere diode
Picoampere二极管

二极管
文件: 总6页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BAV45  
Picoampere diode  
1996 Mar 13  
Product specification  
Supersedes data of July 1986  
Philips Semiconductors  
Product specification  
Picoampere diode  
BAV45  
FEATURES  
DESCRIPTION  
Extremely low leakage current:  
max. 5 pA  
Silicon diode in a metal TO-18 can. It has an extremely low leakage current over  
a wide temperature range combined with a low capacitance and is not sensitive  
to light.  
Low diode capacitance  
Light insensitive.  
APPLICATION  
a
Clamping  
Holding  
k
MAM207  
Peak follower  
Time delay circuits  
Logarithmic amplifiers  
Fig.1 Simplified outline (SOT18/15; TO-18 except for the two leads)  
and symbol.  
Protection of insulated gate  
field-effect transistors.  
CAUTION  
Handle the device with care whilst soldering into the circuit. The extremely  
low leakage current can only be guaranteed when the bottom is free from  
solder flux or other contaminations.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
VR  
repetitive peak reverse voltage  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
total power dissipation  
35  
20  
V
V
IF  
see Fig.2  
50  
mA  
mA  
mW  
°C  
IFRM  
Ptot  
Tstg  
Tj  
100  
200  
+125  
125  
Tamb = 25 °C; note 1  
storage temperature  
65  
junction temperature  
°C  
Note  
1. Device mounted on a FR4 printed-circuit board.  
1996 Mar 13  
2
Philips Semiconductors  
Product specification  
Picoampere diode  
BAV45  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 10 mA; see Figs 3 and 4  
MAX.  
UNIT  
VF  
IR  
1
V
reverse current  
see Fig.5  
VR = 5 V  
5
250  
10  
pA  
pA  
pA  
VR = 5 V; Tj = 80 °C  
VR = 20 V  
Cd  
trr  
diode capacitance  
f = 1 MHz; VR = 0; see Fig.6  
1.3 pF  
600 ns  
reverse recovery time  
when switched from IF = 10 mA to IR = 10 mA;  
RL = 100 ; measured at IR = 1 mA; see Fig.7  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
K/W  
Rth j-a  
thermal resistance from junction to ambient; note 1  
500  
Note  
1. Device mounted on a FR4 printed-circuit board.  
GRAPHICAL DATA  
MBG528  
MBG530  
100  
100  
handbook, halfpage  
handbook, halfpage  
I
F
(mA)  
80  
I
F
(mA)  
60  
40  
20  
50  
0
0
0
o
0
50  
100  
150  
0.5  
1.0  
1.5  
V
(V)  
T
( C)  
amb  
F
Tj = 25 °C.  
Fig.2 Maximum permissible continuous forward  
current as a function of ambient  
temperature.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
1996 Mar 13  
3
Philips Semiconductors  
Product specification  
Picoampere diode  
BAV45  
MBG529  
4
10  
handbook, halfpage  
I
MBG527  
R
10  
10  
handbook, halfpage  
(pA)  
I
F
3
10  
(pA)  
9
10  
(1)  
(2) (3)  
(4)  
2
10  
8
10  
10  
7
10  
1
0
o
50  
100  
150  
T ( C)  
j
6
10  
(1) VR = 20 V; maximum values.  
(2) VR = 5 V; maximum values.  
(3)  
VR = 20 V; typical values.  
5
10  
(4) VR = 5 V; typical values.  
Fig.5 Reverse current as a function of junction  
temperature.  
4
10  
3
10  
MBG531  
1.0  
handbook, halfpage  
2
C
d
10  
(pF)  
0.9  
10  
1
0.8  
0.7  
1  
10  
0
0.25  
0.50  
0.75  
1.00  
(V)  
V
F
1  
2
10  
1
10  
10  
V
(V)  
R
Tj = 25 °C.  
f = 1 MHz; Tj = 25 °C.  
Fig.4 Forward current as a function of forward  
voltage; typical values.  
Fig.6 Diode capacitance as a function of reverse  
voltage; typical values.  
1996 Mar 13  
4
Philips Semiconductors  
Product specification  
Picoampere diode  
BAV45  
t
t
p
r
t
D.U.T.  
10%  
I
F
I
t
R
= 50  
F
rr  
S
SAMPLING  
t
OSCILLOSCOPE  
R = 50 Ω  
V = V  
I x R  
F S  
R
i
(1)  
90%  
V
R
MGA881  
input signal  
output signal  
Fig.7 Reverse recovery time test circuit and waveforms.  
1996 Mar 13  
5
Philips Semiconductors  
Product specification  
Picoampere diode  
BAV45  
PACKAGE OUTLINE  
1.16  
max  
o
45  
1
O 0.51  
max  
O 4.8  
max  
1.17  
max  
2
2.54  
5.8 max  
5.3 max  
12.7 min  
MBA509  
Dimensions in mm.  
Fig.8 SOT18/15; TO-18 (except for the two leads).  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Mar 13  
6

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