BAV99,235 [NXP]
BAV99 series - High-speed switching diodes TO-236 3-Pin;
| 型号： | BAV99,235 |
| 厂家： | 
NXP |
| 描述： | BAV99 series - High-speed switching diodes TO-236 3-Pin |
| 文件： | 总13页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV99 series
High-speed switching diodes
Rev. 05 — 20 August 2008
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
NXP
Configuration
Package
configuration
JEITA
-
JEDEC
TO-236AB dual series
BAV99
SOT23
SOT363
SOT323
small
BAV99S
BAV99W
SC-88
SC-70
-
-
quadruple; 2 series very small
dual series
very small
1.2 Features
I High switching speed: trr ≤ 4 ns
I Low leakage current
I Low capacitance: Cd ≤ 1.5 pF
I Reverse voltage: VR ≤ 100 V
I Small SMD plastic packages
1.3 Applications
I High-speed switching
I Reverse polarity protection
I General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
IR
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
reverse current
VR = 80 V
-
-
-
-
-
-
0.5
100
4
µA
V
VR
reverse voltage
[1]
trr
reverse recovery time
ns
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAV99 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BAV99; BAV99W
1
2
3
anode (diode 1)
3
3
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
2
006aaa144
1
2
006aaa763
BAV99S
1
2
3
anode (diode 1)
6
1
5
2
4
3
6
5
2
4
cathode (diode 2)
cathode (diode 3),
anode (diode 4)
4
5
6
anode (diode 3)
cathode (diode 4)
1
3
006aab101
cathode (diode 1),
anode (diode 2)
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
SOT23
BAV99
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
BAV99S
BAV99W
SC-88
SC-70
SOT363
SOT323
4. Marking
Table 5.
Marking codes
Type number
BAV99
Marking code[1]
A7*
K1*
A7*
BAV99S
BAV99W
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
2 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
-
100
100
V
V
VR
IF
reverse voltage
forward current
BAV99
[1]
[2]
[1]
[1]
[2]
-
-
-
-
-
-
215
125
200
150
130
500
mA
mA
mA
mA
mA
mA
BAV99S
BAV99W
IFRM
IFSM
repetitive peak forward
current
[3]
non-repetitive peak
forward current
square wave
tp = 1 µs
-
-
-
4
A
A
A
tp = 1 ms
tp = 1 s
1
0.5
[1][4]
[5]
Ptot
total power dissipation
BAV99
T
T
T
amb ≤ 25 °C
amb ≤ 85 °C
amb ≤ 25 °C
-
-
-
250
250
200
mW
mW
mW
BAV99S
BAV99W
Per device
Tj
junction temperature
ambient temperature
storage temperature
-
150
°C
°C
°C
Tamb
Tstg
−65
−65
+150
+150
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 °C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[5] Soldering points at pins 2, 3, 5 and 6.
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
3 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1][2]
thermal resistance from
junction to ambient
in free air
BAV99
-
-
-
-
500
625
K/W
K/W
BAV99W
Rth(j-sp)
thermal resistance from
junction to solder point
BAV99
-
-
-
-
-
-
360
260
300
K/W
K/W
K/W
[3]
BAV99S
BAV99W
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering points at pins 2, 3, 5 and 6.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max Unit
VF
forward voltage
IF = 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
mV
mV
V
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V
nA
µA
µA
µA
pF
ns
V
VR = 80 V
0.5
30
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
f = 1 MHz; VR = 0 V
50
Cd
trr
diode capacitance
1.5
4
[1]
[2]
reverse recovery time
forward recovery voltage
VFR
1.75
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 10 mA; tr = 20 ns.
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
4 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
006aab132
006aab133
3
2
10
10
I
R
(1)
I
F
(µA)
10
(mA)
2
10
(2)
(3)
1
−1
10
10
−2
−3
−4
−5
10
10
10
10
(1) (2) (3) (4)
1
(4)
−1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
1.4
(V)
0
20
40
60
80
100
V (V)
R
F
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
mbg446
mbg704
2
10
0.8
C
(pF
d
I
FSM
(A)
)
0.6
0.4
10
1
0.2
0
−1
10
2
3
4
1
10
10
10
10
0
4
8
12
16
V
(V)
R
t
(µs)
p
f = 1 MHz; Tamb = 25 °C
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
Fig 4. Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
5 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
t
p
r
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
6 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
2.2
1.8
1.1
0.8
3.0
2.8
1.1
0.9
0.45
0.15
6
5
4
3
0.45
0.15
2.2 1.35
2.0 1.15
2.5 1.4
2.1 1.2
pin 1
index
1
2
1
2
3
0.25
0.10
0.3
0.2
0.48
0.38
0.15
0.09
0.65
1.9
1.3
Dimensions in mm
06-03-16
Dimensions in mm
04-11-04
Fig 7. Package outline BAV99 (SOT23/TO-236AB)
Fig 8. Package outline BAV99S (SOT363/SC-88)
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 9. Package outline BAV99W (SOT323/SC-70)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
-215
-115
-115
-125
10000
-235
-135
-135
-165
BAV99
SOT23
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
BAV99S
BAV99W
SOT323
SOT363
[2]
[3]
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
7 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 10. Reflow soldering footprint BAV99 (SOT23/TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 11. Wave soldering footprint BAV99 (SOT23/TO-236AB)
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
8 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
sot363_fr
1.8
Fig 12. Reflow soldering footprint BAV99S (SOT363/SC-88)
1.5
solder lands
solder resist
2.5
0.3
4.5
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 13. Wave soldering footprint BAV99S (SOT363/SC-88)
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
9 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
(3×)
solder paste
occupied area
1.3
2.35
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 14. Reflow soldering footprint BAV99W (SOT323/SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig 15. Wave soldering footprint BAV99W (SOT323/SC-70)
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
10 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID
Release date
20080820
Data sheet status
Change notice
Supersedes
BAV99_SER_5
Product data sheet
-
BAV99_4
BAV99S_3
BAV99W_4
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1.1 “General description”: amended
• Table 1 “Product overview”: added
• Table 2 “Quick reference data”: added
• Table 6 “Limiting values”: change of VRRM maximum value from 85 V to 100 V
• Table 6 “Limiting values”: change of VR maximum value from 75 V to 100 V
• Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 25 °C
• Table 8 “Characteristics”: change of IR maximum value from 1 µA to 0.5 µA for VR = 80 V
and Tj = 25 °C condition
• Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 150 °C
• Section 8 “Test information”: added
• Figure 7, 8 and 9: superseded by minimized package outline drawings
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BAV99_4
20011015
20010514
19990511
Product specification
Product specification
Product specification
-
-
-
BAV99_3
BAV99S_3
BAV99W_4
BAV99S_N_2
BAV99W_3
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
11 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BAV99_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 20 August 2008
12 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 August 2008
Document identifier: BAV99_SER_5
相关型号：
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