BAW101S,115 [NXP]
BAW101S - High voltage double diode TSSOP 6-Pin;
| 型号： | BAW101S,115 |
| 厂家： | 
NXP |
| 描述： | BAW101S - High voltage double diode TSSOP 6-Pin 测试 光电二极管 |
| 文件： | 总9页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAW101S
High voltage double diode
Product data sheet
2003 May 13
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
FEATURES
PINNING
PIN
• Small plastic SMD package
DESCRIPTION
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Electrically insulated diodes.
1
2
3
4
5
6
anode 1
n.c.
cathode 2
anode 2
n.c.
APPLICATIONS
cathode 1
• High voltage switching
• Automotive
• Communication.
DESCRIPTION
handbook, halfpage
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
6
5
4
6
5
2
4
3
MARKING
1
MARKING CODE(1)
1
2
3
TYPE NUMBER
BAW101S
Top view
MBL892
K2∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
Fig.1 Simplified outline (SOT363) and symbol.
2003 May 13
2
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
−
−
−
−
300
V
series connection
600
300
600
250
140
625
4.5
V
VRRM
V
series connection
V
IF
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
mA
mA
mA
A
IFRM
IFSM
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge;
t = 1 µs
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb = 25 °C; note 1
−
350
mW
°C
−65
−
+150
150
junction temperature
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VBR(R)
VF
reverse breakdown voltage
forward voltage
IR = 100 µA
300
−
−
V
IF = 100 mA; note 1
VR = 250 V
1.1
150
50
50
V
IR
reverse current
−
nA
µA
ns
VR = 250 V; Tamb = 150 °C
−
trr
reverse recovery time
diode capacitance
when switched from IF = 30 mA to IR = 30 mA;
RL = 100 Ω; measured at IR = 3 mA
−
Cd
VR = 0 V; f = 1 MHz
−
2
pF
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
2003 May 13
3
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point note 1
thermal resistance from junction to ambient note 2
CONDITIONS
VALUE
UNIT
K/W
K/W
255
357
Rth j-a
Notes
1. One or more diodes loaded.
2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
GRAPHICAL DATA
MLE057
MBG384
600
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
400
200
(1)
(2)
200
100
0
0
0
0
1
2
50
100
150
200
(°C)
V
(V)
F
T
amb
(1) Single diode loaded.
(2) Double diode loaded.
Device mounted on an FR4 printed-circuit board.
Cathode-lead mounting pad = 1 cm2.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
2003 May 13
4
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MLE058
MLE059
2
10
0.6
handbook, halfpage
handbook, halfpage
I
R
C
d
(pF)
(µA)
10
0.5
(1)
(2)
1
0.4
0.3
−1
10
−2
10
0.2
0
0
50
100
150
200
2
4
6
8
10
T (°C)
V
(V)
j
R
(1) VR = VRMAX: maximum values.
(2) R = VRMAX: typical values.
f = 1 MHz; Tj = 25 °C.
V
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2003 May 13
5
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
MLE060
400
handbook, halfpage
V
R
(V)
300
200
100
0
0
50
100
150
200
(°C)
T
amb
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
2003 May 13
6
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2003 May 13
7
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 May 13
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp9
Date of release: 2003 May 13
Document order number: 9397 750 11148
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