BAW56T [NXP]
High-speed double diode; 高速双二极管
| 型号： | BAW56T |
| 厂家： | 
NXP |
| 描述： | High-speed double diode |
| 文件： | 总12页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAW56T
High-speed double diode
1997 Dec 19
Product specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
FEATURES
DESCRIPTION
PINNING
PIN
• Very small plastic SMD package
• High switching speed: max. 4 ns
Two high-speed switching diodes in a
common anode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.
DESCRIPTION
1
2
3
cathode 1
• Continuous reverse voltage:
max. 75 V
cathode 2
common anode
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
handbook, halfpage
3
3
1
2
APPLICATIONS
1
2
MAM369
• High-speed switching in e.g.
surface mounted circuits.
Marking code: A1.
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS
Per diode (unless otherwise specified)
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
85
V
V
75
IF
Ts = 90 °C; see Fig.2
single diode loaded
both diodes loaded
−
−
−
150
75
mA
mA
mA
IFRM
IFSM
repetitive peak forward current
500
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
170
+150
+150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Ts = 90 °C; one diode loaded
mW
°C
°C
−65
−
1997 Dec 19
2
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
0.715
V
V
V
V
0.855
1
1.25
IR
reverse current
30
1
nA
µA
µA
µA
pF
ns
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
30
50
2
Cd
trr
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
reverse recovery time
switching from IF = 10 mA to IR = 10 mA;
4
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
switched to IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point one diode loaded
350
1997 Dec 19
3
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
GRAPHICAL DATA
MBK249
MBG382
300
300
handbook, halfpage
handbook, halfpage
(1)
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
200
200
(2)
100
100
0
0
0
1
2
0
100
200
V
(V)
F
T
(°C)
s
(1) One diode loaded.
(2) Both diodes loaded.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current per diode as a function of
Fig.3 Forward current as a function of
forward voltage.
soldering point temperature.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1997 Dec 19
4
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
MGA884
MBH191
5
2.5
10
handbook, halfpage
C
d
I
R
(pF)
2.0
(nA)
V
= 75 V
R
4
3
10
1.5
1.0
max
75 V
25 V
10
2
10
0.5
typ
typ
0
0
10
0
100
200
5
10
15
20
25
o
( C)
T
V
(V)
j
R
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1997 Dec 19
5
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
1997 Dec 19
6
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
1
b
p
w
M
B
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT416
SC-75
1997 Dec 19
7
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 19
8
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
NOTES
1997 Dec 19
9
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
NOTES
1997 Dec 19
10
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
NOTES
1997 Dec 19
11
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© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
117027/00/02/pp12
Date of release: 1997 Dec 19
Document order number: 9397 750 02873
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