BAW56W [NXP]
High-speed double diode; 高速双二极管
| 型号： | BAW56W |
| 厂家： | 
NXP |
| 描述： | High-speed double diode |
| 文件： | 总12页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAW56W
High-speed double diode
1999 May 11
Product specification
Supersedes data of 1996 Sep 17
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
FEATURES
DESCRIPTION
PINNING
PIN
• Very small plastic SMD package
• High switching speed: max. 4 ns
The BAW56W consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
very small SOT323 plastic SMD
package.
DESCRIPTION
1
2
3
cathode (k1)
cathode (k2)
common anode
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
2
1
APPLICATIONS
• High-speed switching in e.g.
2
1
surface mounted circuits.
3
3
MAM092
Top view
Marking code: A1.
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
85
V
V
75
IF
single diode loaded; note 1;
see Fig.2
150
mA
mA
mA
double diode loaded; note 1;
see Fig.2
−
−
130
500
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
−
−
4
A
t = 1 ms
1
A
t = 1 s
0.5
200
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11
2
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
715
855
1
mV
mV
V
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
30
1
nA
µA
µA
µA
pF
ns
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
30
50
2
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
4
measured at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
300
625
K/W
K/W
Rth j-a
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11
3
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
GRAPHICAL DATA
MBG382
MGA889
300
200
handbook, halfpage
I
F
(mA)
single diode loaded
I
F
(1)
(2)
(3)
(mA)
double diode loaded
200
100
100
0
0
0
1
2
V
(V)
0
100
200
o
F
T
( C)
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 11
4
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
MGA884
MBH191
5
2.5
10
handbook, halfpage
C
d
I
R
(pF)
2.0
(nA)
V
= 75 V
R
4
3
10
1.5
1.0
max
75 V
25 V
10
2
10
0.5
typ
typ
0
0
10
5
10
15
20
25
0
100
200
o
( C)
T
V
(V)
j
R
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 11
5
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
1999 May 11
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 May 11
7
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 11
8
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
NOTES
1999 May 11
9
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
NOTES
1999 May 11
10
Philips Semiconductors
Product specification
High-speed double diode
BAW56W
NOTES
1999 May 11
11
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© Philips Electronics N.V. 1999
SCA64
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Printed in The Netherlands
115002/00/04/pp12
Date of release: 1999 May 11
Document order number: 9397 750 05949
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