BAX14 [NXP]

General purpose diode; 通用二极管
BAX14
型号: BAX14
厂家: NXP    NXP
描述:

General purpose diode
通用二极管

整流二极管
文件: 总7页 (文件大小:40K)
中文:  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BAX14  
General purpose diode  
1996 Sep 17  
Product specification  
Supersedes data of April 1996  
Philips Semiconductors  
Product specification  
General purpose diode  
BAX14  
FEATURES  
DESCRIPTION  
Hermetically sealed leaded glass  
SOD27 (DO-35) package  
The BAX14 is a general purpose switching diode fabricated in planar  
technology, and encapsulated in the hermetically sealed leaded glass SOD27  
(DO-35) package.  
Switching speed: max. 50 ns  
General application  
Continuous reverse voltage:  
max. 20 V  
Repetitive peak reverse voltage:  
max. 40 V  
handbook, halfpage  
k
a
Repetitive peak forward current:  
max. 2 A.  
MAM246  
APPLICATIONS  
The diode is type branded.  
Low-voltage switching  
Rectifier applications  
Low-voltage stabilizing.  
Fig.1 Simplified outline (SOD27; DO-35) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
VR  
repetitive peak reverse voltage  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
40  
20  
V
V
IF  
see Fig.2; note 1  
500  
mA  
mA  
IFRM  
IFSM  
2000  
non-repetitive peak forward current square wave; Tj = 25 °C prior to  
surge; see Fig.4  
t = 1 µs  
55  
15  
A
t = 100 µs  
t = 10 ms  
A
9
A
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1  
450  
+200  
200  
mW  
°C  
°C  
65  
Note  
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.  
1996 Sep 17  
2
Philips Semiconductors  
Product specification  
General purpose diode  
BAX14  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VF  
see Fig.3  
IF = 1 mA  
520  
750  
600  
mV  
IF = 300 mA  
1000  
mV  
IR  
reverse current  
see Fig.5  
VR = 20 V  
100  
100  
35  
nA  
µA  
pF  
ns  
VR = 20 V; Tj = 150 °C  
f = 1 MHz; VR = 0; see Fig.6  
Cd  
trr  
diode capacitance  
reverse recovery time  
when switched from IF = 30 mA to  
IR = 30 mA; RL = 100 ;  
50  
measured at IR = 3 mA; see Fig.7  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point lead length 10 mm  
240  
375  
K/W  
K/W  
thermal resistance from junction to ambient lead length 10 mm; note 1  
Note  
1. Device mounted on a printed circuit-board without metallization pad.  
1996 Sep 17  
3
Philips Semiconductors  
Product specification  
General purpose diode  
BAX14  
GRAPHICAL DATA  
MBG455  
MBG462  
500  
600  
handbook, halfpage  
handbook, halfpage  
I
F
I
(mA)  
F
(mA)  
400  
(1) (2)  
(3)  
400  
300  
200  
100  
0
200  
0
0
o
0
100  
200  
1
2
T
( C)  
V
(V)  
amb  
F
(1) Tj = 175 °C; typical values.  
(2) Tj = 25 °C; typical values.  
(3) Tj = 25 °C; maximum values.  
Device mounted on an FR4 printed-circuit board; lead length 10 mm.  
Fig.2 Maximum permissible continuous forward  
current as a function of ambient  
temperature.  
Fig.3 Forward current as a function of forward  
voltage.  
MBG702  
2
10  
I
FSM  
(A)  
10  
1
1  
10  
2
3
4
1
10  
10  
10  
10  
t
(µs)  
p
Based on square wave currents.  
Tj = 25 °C prior to surge.  
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.  
1996 Sep 17  
4
Philips Semiconductors  
Product specification  
General purpose diode  
BAX14  
MBG696  
7
10  
I
R
(nA)  
6
10  
5
10  
4
10  
3
10  
2
10  
10  
0
100  
o
200  
T ( C)  
j
VR = 20 V.  
Solid line; maximum values. Dotted line; typical values.  
Fig.5 Reverse current as a function of junction temperature.  
MGD003  
40  
handbook, halfpage  
C
d
(pF)  
30  
20  
10  
0
0
10  
20  
30  
V
(V)  
R
f = 1 MHz; Tj = 25 °C.  
Fig.6 Diode capacitance as a function of reverse  
voltage; typical values.  
1996 Sep 17  
5
Philips Semiconductors  
Product specification  
General purpose diode  
BAX14  
t
t
p
r
t
D.U.T.  
I
10%  
I
t
R
= 50  
F
F
rr  
S
SAMPLING  
t
OSCILLOSCOPE  
R = 50 Ω  
V = V  
I x R  
F S  
R
i
(1)  
90%  
V
R
MGA881  
input signal  
output signal  
(1) IR = 3 mA.  
Fig.7 Reverse recovery voltage test circuit and waveforms.  
1996 Sep 17  
6
Philips Semiconductors  
Product specification  
General purpose diode  
BAX14  
PACKAGE OUTLINE  
n
0.56  
max  
1.85  
max  
4.25  
max  
MLA428 - 1  
25.4 min  
25.4 min  
Dimensions in mm.  
Fig.8 SOD27 (DO-35).  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Sep 17  
7

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