BB146 [NXP]
UHF variable capacitance diode; 超高频可变电容二极管
| 型号： | BB146 |
| 厂家： | 
NXP |
| 描述： | UHF variable capacitance diode |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
BB146
UHF variable capacitance diode
1996 Sep 20
Product specification
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB146
FEATURES
• Ultra high ratio
• Excellent matching to 1.6% DMA
handbook, 4 columns
k
a
(Direct Matching Assembly)
• Very small plastic SMD package
• C28: 1.9 pF; ratio 20.
MAM130
APPLICATIONS
• Electronic tuning in television
Marking code: P6.
tuners with extended UHF range
Cathode side indicated by a bar.
• Voltage controlled oscillators
(VCO).
Fig.1 Simplified outline (SOD323) and symbol.
DESCRIPTION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
The BB146 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
storage temperature
MIN.
MAX.
30
UNIT
VR
IF
V
−
−
20
mA
°C
The excellent matching performance
is achieved by gliding matching and a
direct matching assembly procedure.
Tstg
Tj
+150
+125
−55
−55
operating junction temperature
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
reverse current
CONDITIONS
MIN.
MAX.
UNIT
IR
VR = 30 V; see Fig.3
−
nA
nA
Ω
10
VR = 30 V; Tj = 85 °C; see Fig.3
f = 470 MHz; note 1
−
200
1.4
43
rs
diode series resistance
diode capacitance
−
Cd
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
VR = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
35
1.7
17.5
pF
pF
2.1
23
capacitance ratio
Cd (0.5V)
---------------------
Cd (28V)
capacitance matching
VR = 0.5 to 28 V; in a sequence of 8 diodes
(gliding)
−
1.6
%
∆ C d
----------
C d
Note
1. VR is the value at which Cd = 9 pF.
1996 Sep 20
2
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB146
GRAPHICAL DATA
MBH584
50
C
d
(pF)
40
30
20
10
0
10
−1
2
1
10
10
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MLC816
MLC815
3
10
3
10
handbook, halfpage
handbook, halfpage
TC
d
(K )
I
R
−1
(nA)
4
2
10
10
5
10
10
0
1
2
50
100
10
1
10
10
o
V
(V)
T
( C)
R
j
Tj = 0 to 85 °C.
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
Fig.3 Reverse current as a function of junction
temperature; maximum values.
1996 Sep 20
3
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB146
PACKAGE OUTLINE
0.55
0.40
1.00
0.25
max
0.10
0.05
max
MBC672 - 1
A
1.35
1.15
0.40
0.25
1.8
1.6
2.7
2.3
0.2
A
M
Dimensions in mm.
The marking bar indicates the cathode.
Fig.5 SOD323.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 20
4
相关型号：
BB146T/R
DIODE UHF BAND, 39 pF, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-2, Variable Capacitance Diode
NXP
BB148-T
DIODE VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SC-76, 2 PIN, Variable Capacitance Diode
NXP
BB148/T3
DIODE VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SC-76, 2 PIN, Variable Capacitance Diode
NXP
BB148T/R
DIODE VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SC-76, 2 PIN, Variable Capacitance Diode
NXP
©2020 ICPDF网 联系我们和版权申明