BB190 [NXP]

UHF variable capacitance diode; 超高频可变电容二极管
BB190
型号: BB190
厂家: NXP    NXP
描述:

UHF variable capacitance diode
超高频可变电容二极管

二极管 变容二极管 光电二极管
文件: 总6页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BB190  
UHF variable capacitance diode  
Product specification  
2004 Mar 26  
Supersedes data of 2000 Nov 07  
Philips Semiconductors  
Product specification  
UHF variable capacitance diode  
BB190  
FEATURES  
PINNING  
PIN  
Excellent linearity  
DESCRIPTION  
Very small plastic SMD package  
Very low series resistance  
Very low capacitance spread.  
1
2
cathode  
anode  
1
2
APPLICATIONS  
Electronic tuning in UHF radio tuners  
VCO.  
Top view  
sym008  
Marking code: PN.  
DESCRIPTION  
Cathode side indicated by a bar.  
The BB190 is a variable capacitance diode, fabricated in  
planar technology, and encapsulated in the SOD323  
(SC-76) very small plastic SMD package.  
Fig.1 Simplified outline (SOD323; SC-76) and  
symbol.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
DESCRIPTION  
plastic surface mounted package; 2 leads  
NUMBER  
NAME  
VERSION  
BB190  
SOD323  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER  
VR  
MIN.  
MAX.  
UNIT  
continuous reverse voltage  
storage temperature  
10  
V
Tstg  
Tj  
55  
+125  
125  
°C  
°C  
operating junction temperature  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
VR  
PARAMETER  
reverse voltage  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
IR = 1 µA  
10  
V
IR  
rs  
reverse current  
VR = 10 V; see Fig.3  
3
nA  
diode series resistance  
diode capacitance  
f = 470 MHz; VR = 1 V  
0.26  
0.4  
20  
Cd  
VR = 1 V; f = 1 MHz; see Figs 2 and 4  
VR = 2 V; f = 1 MHz; see Figs 2 and 4  
VR = 4 V; f = 1 MHz; see Figs 2 and 4  
VR = 10 V; f = 1 MHz; see Figs 2 and 4  
f = 1 MHz  
18  
pF  
pF  
pF  
pF  
15  
10.1  
11.6  
6
capacitance ratio  
1.55  
Cd(1V)  
----------------  
Cd(4V)  
2004 Mar 26  
2
Philips Semiconductors  
Product specification  
UHF variable capacitance diode  
BB190  
GRAPHICAL DATA  
MGT564  
25  
C
d
(pF)  
20  
15  
10  
5
0
10  
1  
2
1
10  
10  
V
(V)  
R
Fig.2 Diode capacitance as a function of reverse voltage; typical values.  
MGT565  
MGS352  
3  
3
10  
10  
handbook, halfpage  
handbook, halfpage  
I
R
TC  
d
(nA)  
1  
(K  
)
2
10  
10  
4  
10  
1
0
1  
10  
1
10  
20  
40  
60  
80  
100  
T (°C)  
V
(V)  
R
j
Fig.4 Temperature coefficient of diode  
capacitance as a function of reverse  
voltage; typical values.  
Fig.3 Reverse current as a function of junction  
temperature; maximum values.  
2004 Mar 26  
3
Philips Semiconductors  
Product specification  
UHF variable capacitance diode  
BB190  
PACKAGE OUTLINE  
Plastic surface mounted package; 2 leads  
SOD323  
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)  
c
L
p
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
mm  
b
c
D
E
H
L
p
Q
v
A
p
D
max  
1.1  
0.8  
0.40 0.25  
0.25 0.10  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45 0.25  
0.15 0.15  
0.05  
0.2  
Note  
1. The marking bar indicates the cathode  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
99-09-13  
03-12-17  
SOD323  
SC-76  
2004 Mar 26  
4
Philips Semiconductors  
Product specification  
UHF variable capacitance diode  
BB190  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Mar 26  
5
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R77/02/pp6  
Date of release: 2004 Mar 26  
Document order number: 9397 750 12659  

相关型号:

BB190T/R

DIODE UHF BAND, 15 pF, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SC-76, 3 PIN, Variable Capacitance Diode
NXP

BB198

Variable capacitance diode for VCO and VCXO Small plastic SMD package
NXP

BB198,115

BB198 - Low voltage variable capacitance diode SOD 2-Pin
NXP

BB199

Variable capacitance diode for VCO and VCXO Small plastic SMD package
NXP

BB1A3M

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
NEC

BB1A3M-A

700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
RENESAS

BB1A4A

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
NEC

BB1A4A-A

暂无描述
NEC

BB1A4A-A

BB1A4A-A
RENESAS

BB1A4M

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
NEC

BB1A4M

700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
RENESAS

BB1A4M-A

暂无描述
NEC