BC177 [NXP]
PNP general purpose transistor; PNP通用晶体管
| 型号： | BC177 |
| 厂家： | 
NXP |
| 描述： | PNP general purpose transistor |
| 文件： | 总8页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
*
BC177
PNP general purpose transistor
1997 Jun 04
Product specification
Supersedes data of 1997 May 01
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
DESCRIPTION
1
2
3
emitter
base
APPLICATIONS
collector, connected to the case
• General purpose switching and amplification.
DESCRIPTION
3
1
handbook, halfpa1ge
2
PNP transistor in a TO-18; SOT18 metal package.
NPN complement: BC107.
2
3
MAM263
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−50
UNIT
VCBO
VCEO
ICM
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
open emitter
open base
−
−
−
−
V
V
−45
−200
300
500
−
mA
Ptot
hFE
fT
Tamb ≤ 25 °C
mW
IC = −2 mA; VCE = −5 V
125
100
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
MHz
1997 Jun 04
2
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−45
open collector
−5
−100
−200
−200
300
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C
−65
−
+150
175
°C
Tamb
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
K/mW
K/mW
thermal resistance from junction to ambient note 1
thermal resistance from junction to case
0.5
0.2
Rth j-c
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jun 04
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −20 V
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
−
−1
−
−15
−10
50
nA
µA
nA
IE = 0; VCB = −20 V; Tj = 150 °C
IC = 0; VEB = −5 V
−
IEBO
hFE
hFE
emitter cut-off current
DC current gain
DC current gain
BC177A
−
−
IC = −2 mA; VCE = −5 V
IC = −2 mA; VCE = −5 V
125
140
500
125
240
−
180
260
500
BC177B
290
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
−75
−300 mV
−
−250
−700
−850
−
−
−
mV
mV
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−
IC = −100 mA; IB = −5 mA
−
VBE
Cc
fT
base-emitter voltage
collector capacitance
transition frequency
noise figure
IC = −2 mA; VCE = −5 V; note 1
IE = ie = 0; VCB = −10 V; f = 1 MHz
−600 −650 −750 mV
−
4
−
−
6
pF
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
MHz
dB
F
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
−
10
f = 1 kHz; B = 200 Hz
Note
1. VBE decreases by about −2 mV/K with increasing temperature.
1997 Jun 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
seating plane
α
j
B
w
M
M
M
B
A
1
b
k
D
1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D
j
k
L
w
α
1
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
mm
0.40
2.54
45°
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
B11/C7 type 3
JEDEC
EIAJ
SOT18/13
TO-18
97-04-18
1997 Jun 04
5
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 04
6
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
NOTES
1997 Jun 04
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/03/pp8
Date of release: 1997 Jun 04
Document order number: 9397 750 02374
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