BC517,112 [NXP]
TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal;
| 型号： | BC517,112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC517
NPN Darlington transistor
Product specification
2004 Nov 05
Supersedes data of 2003 Oct 16
Philips Semiconductors
Product specification
NPN Darlington transistor
BC517
FEATURES
PINNING
PIN
• High current (max. 500 mA)
• Low voltage (max. 30 V)
DESCRIPTION
1
2
3
emitter
base
• Very high DC current gain (min. 30000).
collector
APPLICATIONS
• Where very high amplification is required.
2
3
handbook, halfpage
1
2
3
DESCRIPTION
TR1
TR2
NPN Darlington transistor in a TO-92; SOT54 plastic
package. PNP complement: BC516.
1
MAM302
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
BC517
SC-43A
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
VEBO
IC
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
−
−
−
−
−
−
−
V
VBE = 0 V
30
V
open collector
10
V
500
800
100
625
+150
150
+150
mA
mA
mA
mW
°C
°C
°C
ICM
IB
Ptot
total power dissipation
storage temperature
junction temperature
ambient temperature
Tamb ≤ 25 °C; note 1
Tstg
−65
−
Tj
Tamb
−65
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Nov 05
2
Philips Semiconductors
Product specification
NPN Darlington transistor
BC517
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
UNIT
Rth(j-a)
200
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
VCB = 30 V; IE = 0 A
VEB = 10 V; IC = 0 A
MIN.
TYP. MAX. UNIT
−
−
100
100
−
nA
nA
−
−
VCE = 2 V; IC = 20 mA; see Fig.2 30000
−
VCEsat
VBEsat
VBEon
fT
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA
−
−
−
−
−
1
V
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
IC = 100 mA; IB = 0.1 mA
VCE = 5 V; IC = 10 mA
−
1.5
1.4
−
V
−
V
VCE = 5 V; IC = 30 mA;
f = 100 MHz
220
MHz
MGD837
80000
h
FE
60000
40000
20000
0
10
−1
2
3
1
10
10
10
I
(mA)
C
VCE = 2 V.
Fig.2 DC current gain; typical values.
2004 Nov 05
3
Philips Semiconductors
Product specification
NPN Darlington transistor
BC517
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
97-02-28
04-06-28
SOT54
TO-92
SC-43A
2004 Nov 05
4
Philips Semiconductors
Product specification
NPN Darlington transistor
BC517
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Nov 05
5
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/06/pp6
Date of release: 2004 Nov 05
Document order number: 9397 750 13567
相关型号：
BC517,116
TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
NXP
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