BC53-10PAS [NXP]
SMALL SIGNAL TRANSISTOR;
| 型号： | BC53-10PAS |
| 厂家： | 
NXP |
| 描述： | SMALL SIGNAL TRANSISTOR |
| 文件： | 总15页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC51PAS; BC52PAS; BC53PAS
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ꢂ
'
ꢁ
ꢀ
ꢁ
ꢀ
1
)
45 V/60 V/80 V, 1 A PNP medium power transistors
'
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3
(SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability and visible and solderable side pads.
Table 1.
Product overview
Type number[1]
Package
NPN complement
BC54PAS
BC51PAS
DFN2020D-3
SOT1061D
BC52PAS
BC55PAS
BC53PAS
BC56PAS
[1] Valid for all available selection groups.
1.2 Features and benefits
High collector current capability
Three current gain selections
IC and ICM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter Conditions
Min Typ Max Unit
VCEO
collector-emitter voltage open base
BC51PAS series
-
-
-
-
-
-
45
60
80
V
V
V
BC52PAS series
BC53PAS series
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
Table 2.
Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter Conditions
Min Typ Max Unit
IC
collector current
-
-
-
-
-
-
1
A
A
ICM
hFE
peak collector current
DC current gain
single pulse; tp 1 ms
-
2
[1]
[1]
[1]
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 150 mA
63
63
100
250
160
250
hFE selection -10
hFE selection -16
[1] Pulse test: tp 300 ms; 0.02.
2. Pinning information
Table 3.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
ꢃ
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2
emitter
3
collector
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3. Ordering information
Table 4.
Ordering information
Type number[1]
Package
Name
Description
Version
BC51PAS series
BC52PAS series
BC53PAS series
DFN2020D-3 plastic thermal enhanced ultra thin small
outline package; no leads; 3 terminals;
body 2 2 0.65 mm.
SOT1061D
[1] Valid for all available selection groups.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
2 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
4. Marking
Table 5.
Marking codes
Type number
BC51PAS
Marking code
C4
C5
C6
C7
C8
C9
CA
CB
CC
BC51-10PAS
BC51-16PAS
BC52PAS
BC52-10PAS
BC52-16PAS
BC53PAS
BC53-10PAS
BC53-16PAS
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
BC51PAS series
BC52PAS series
BC53PAS series
collector-emitter voltage
BC51PAS series
BC52PAS series
BC53PAS series
emitter-base voltage
collector current
peak collector current
base current
open emitter
-
-
-
45
V
V
V
60
100
VCEO
open base
-
-
-
-
-
-
-
45
60
80
5
V
V
V
V
A
A
A
VEBO
IC
ICM
IB
open collector
1
single pulse; tp 1 ms
2
0.3
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
3 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
0.42
0.81
0.83
1.10
1.65
150
Unit
W
[1]
[2]
[3]
[4]
[5]
Ptot
total power dissipation
Tamb 25 C
-
-
W
-
W
-
W
-
W
Tj
junction temperature
ambient temperature
storage temperature
-
C
C
C
Tamb
Tstg
55
65
150
150
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.
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(1) FR4 PCB, 4-layer copper, 1 cm2
(2) FR4 PCB, single-sided copper, 6 cm2
(3) FR4 PCB, single-sided copper, 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1. Power derating curves
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
4 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Max
298
154
151
114
76
Unit
K/W
K/W
K/W
K/W
K/W
K/W
[1]
[2]
[3]
[4]
[5]
thermal resistance from junction to ambient
in free air
Rth(j-sp)
thermal resistance from junction to solder point
in free air
20
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2
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FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
5 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
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FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
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FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
6 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
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FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
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FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
7 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min
-
Typ
Max Unit
ICBO
collector-base cut-off current
VCB = 30 V; IE = 0 A
-
-
-
-
-
-
-
-
-
100 nA
VCB = 30 V; IE = 0 A; Tj = 150 C
VEB = 5 V; IC = 0 A
-
10
A
IEBO
hFE
emitter-base cut-off current
DC current gain
-
100 nA
VCE = 2 V; IC = 5 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 150 mA
IC = 500 mA; IB = 50 mA
63
63
40
63
100
-
-
[1]
[1]
[1]
[1]
[1]
250
-
hFE selection -10
hFE selection -16
160
250
VCEsat
collector-emitter saturation
voltage
500 mV
[1]
VBE
Cc
fT
base-emitter voltage
collector capacitance
transition frequency
VCE = 2 V; IC = 500 mA
-
-
-
-
1
-
V
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
VCE = 5 V; IC = 50 mA; f = 100 MHz
15
145
pF
-
MHz
[1] Pulse test: tp 300 ms; 0.02.
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VCE = 2 V
amb = 100 C
Tamb = 25 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 7. DC current gain as a function of collector
current; typical values
Fig 8. Collector current as a function of
collector-emitter voltage; typical values
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
8 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
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VCE = 2 V
IC/IB = 10
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 9. Base-emitter voltage as a function of collector
current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
9 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
9. Package outline
0.65
max
1.3
0.45
0.35
0.35
0.25
0.04
max
1
2
2.1
1.9
1.1
0.9
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
14-03-18
Fig 11. Package outline DFN2020D-3 (SOT1061D)
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
10 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
10. Soldering
Footprint information for reflow soldering of DFN2020D-3 package
SOT1061D
2.1
1.7
1.3
0.4 (2x)
0.3 (2x)
0.5 (2x)
0.5 (2x) 0.6 (2x) 0.7 (2x)
0.25
1.1
0.35
0.3
0.25
2.5 2.3
0.25
1
1.1 1.2
0.35
0.35
0.35
0.3
0.4
0.5
1.5
1.6
1.7
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
14-03-05
14-03-12
Issue date
sot1061d_fr
Fig 12. Reflow soldering footprint DFN2020D-3 (SOT1061D)
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
11 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC51_52_53PAS_SER v.1
20150619
Product data sheet
-
-
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
12 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
12.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
13 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
14 of 15
BC51PAS; BC52PAS; BC53PAS
NXP Semiconductors
45 V/60 V/80 V, 1 A PNP medium power transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 June 2015
Document identifier: BC51_52_53PAS_SER
相关型号：
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