BC550C-T/R [NXP]

TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal;
BC550C-T/R
型号: BC550C-T/R
厂家: NXP    NXP
描述:

TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal

晶体 晶体管
文件: 总7页 (文件大小:209K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BC549; BC550  
NPN general purpose transistors  
Product data sheet  
2004 Oct 11  
Supersedes data of 1999 Apr 22  
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC549; BC550  
FEATURES  
PINNING  
Low current (max. 100 mA)  
Low voltage (max. 45 V).  
PIN  
1
DESCRIPTION  
emitter  
base  
2
APPLICATIONS  
3
collector  
Low noise stages in audio frequency equipment.  
DESCRIPTION  
1
handbook, halfpage  
3
1
2
3
NPN transistor in a TO-92; SOT54 plastic package.  
PNP complements: BC559 and BC560.  
2
MAM182  
Fig.1 Simplified outline (TO-92; SOT54)  
and symbol.  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
plastic single-ended leaded (through hole) package; 3 leads  
VERSION  
BC549C  
BC550C  
SC-43A  
SOT54  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
collector-base voltage  
BC549  
30  
V
V
BC550  
50  
VCEO  
collector-emitter voltage  
BC549  
open base  
30  
V
BC550  
45  
V
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
ambient temperature  
open collector  
5
V
100  
200  
200  
500  
+150  
150  
+150  
mA  
mA  
mA  
mW  
°C  
°C  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
Tamb  
65  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2004 Oct 11  
2
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC549; BC550  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
250  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
VCB = 30 V; IE = 0 A  
MIN. TYP. MAX. UNIT  
collector-base cut-off current  
15  
5
nA  
μA  
nA  
VCB = 30 V; IE = 0 A; Tj = 150 °C  
VEB = 5 V; IC = 0 A  
VCE = 5 V; see Fig.2  
IC = 10 μA  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
100  
270  
520  
90  
IC = 2 mA  
420  
800  
250  
600  
VCEsat  
VBEsat  
VBE  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA  
mV  
mV  
mV  
mV  
mV  
mV  
pF  
200  
700  
900  
660  
base-emitter saturation voltage  
IC = 10 mA; IB = 0.5 mA; note 1  
IC = 100 mA; IB = 5 mA; note 1  
VCE = 5 V; IC = 2 mA; note 2  
VCE = 5 V; IC = 10 mA; note 2  
base-emitter voltage  
580  
700  
770  
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
1.5  
VEB = 0.5 V; IC = ic = 0 A;  
f = 1 MHz  
11  
4
4
pF  
VCE = 5 V; IC = 10 mA;  
f = 100 MHz  
100  
MHz  
dB  
F
VCE = 5 V; IC = 200 μA;  
RS = 2 kΩ; f = 10 Hz to 15.7 kHz  
VCE = 5 V; IC = 200 μA;  
dB  
RS = 2 kΩ; f = 1 kHz; B = 200 Hz  
Notes  
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.  
2. VBE decreases by about 2 mV/K with increasing temperature.  
2004 Oct 11  
3
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC549; BC550  
MBH725  
600  
V
= 5 V  
CE  
h
FE  
400  
200  
0
10  
2  
1  
2
3
10  
1
10  
10  
10  
I
(mA)  
C
BC549C; BC550C.  
Fig.2 DC current gain; typical values.  
2004 Oct 11  
4
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC549; BC550  
PACKAGE OUTLINE  
Plastic single-ended leaded (through hole) package; 3 leads  
SOT54  
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
1
UNIT  
A
b
b
c
D
d
E
e
e
L
1
1
max.  
5.2  
5.0  
0.48  
0.40  
0.66  
0.55  
0.45  
0.38  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
mm  
2.54  
1.27  
2.5  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
04-06-28  
04-11-16  
SOT54  
TO-92  
SC-43A  
2004 Oct 11  
5
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC549; BC550  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
operation of the device at these or any other conditions  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
2004 Oct 11  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/04/pp7  
Date of release: 2004 Oct 11  
Document order number: 9397 750 13569  

相关型号:

BC550C/D75Z

45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
TI

BC550C/L34Z

45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
TI

BC550C/RR

TRANSISTOR SOT-54
ETC

BC550CBU

NPN外延硅晶体管
ONSEMI

BC550CBU

Switching and Applications
FAIRCHILD

BC550CD

TRANSISTOR,BJT,NPN,45V V(BR)CEO,CHIP / DIE
ZETEX

BC550CD26Z

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD

BC550CD27Z

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD

BC550CD74Z

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD

BC550CD75Z

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD

BC550CG

Low Noise Transistors NPN Silicon
ONSEMI

BC550CJ05Z

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
FAIRCHILD