BC69PAS_技术文档

BC69PAS series

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20 V, 2 A PNP medium power transistors

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Rev. 1 — 19 June 2015

Product data sheet

1. Product profile

1.1 General description

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small

Surface-Mounted Device (SMD) plastic package with medium power capability and visible

and solderable side pads.

NPN complement: BC68PAS series

1.2 Features and benefits

 High collector current capability

 Three current gain selections

I_Cand I_CM

 Reduced Printed-Circuit Board (PCB)

 Leadless very small SMD plastic

area requirements

package with medium power capability

 Exposed heat sink for excellent thermal  Suitable for Automatic Optical

and electrical conductivity

Inspection (AOI) of solder joint

 AEC-Q101 qualified

1.3 Applications

 Linear voltage regulators

 Battery driven devices

 MOSFET drivers

 High-side switches

 Power management

 Amplifiers

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 C unless otherwise specified

Symbol Parameter Conditions

collector-emitter voltage open base

Min Typ Max Unit

V_CEO

-

20

V

I_C

collector current

peak collector current

DC current gain

-

2

A

I_CM

h_FE

single pulse; t_p 1 ms

-

3

[1]

V_CE= 1 V; I_C= 500 mA

85

100

160

375

250

375

h_FEselection -16

h_FEselection -25

[1] Pulse test: t_p 300 ms;   0.02.

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

2. Pinning information

Table 2.

Pinning

1

Description

base

Simplified outline

Graphic symbol

ꢃ

2

emitter

3

collector

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3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BC69PAS

DFN2020D-3 plastic thermal enhanced ultra thin small outline

package; no leads; 3 terminals; body

2  2  0.65 mm.

SOT1061D

BC69-16PAS

BC69-25PAS

4. Marking

Table 4.

Marking codes

Type number

BC69PAS

Marking code

C1

C2

C3

BC69-16PAS

BC69-25PAS

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

32

20

5

Unit

V

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

-

V

open collector

V

2

A

I_CM

peak collector current

single pulse;

3

A

t_p 1 ms

I_B

base current

-

0.4

A

BC69PAS_SER

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Product data sheet

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BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

420

830

1.1

Unit

mW

W

[1]

[2]

[3]

[4]

[5]

P_tot

total power dissipation

T_amb 25 C

-

810

1.65

150

mW

W

-

T_j

junction temperature

ambient temperature

storage temperature

-

C

T_amb

T_stg

55

65

C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm².

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm².

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3

WRW

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ꢄꢂꢅ

ꢄ:ꢅ

ꢁꢉꢈ

ꢁꢉꢊ

ꢊꢉꢈ

ꢊꢉꢊ

ꢄꢃꢅ

ꢄꢋꢅ

ꢄꢈꢅ

ꢆꢇꢈ

ꢆꢂꢈ

ꢂꢈ

ꢇꢈ

ꢁꢂꢈ

ꢁꢇꢈ

ꢀꢄ&ꢅ

7

DPE

(1) FR4 PCB, 4-layer copper, 1 cm²

(2) FR4 PCB, single-sided copper, 6 cm²

(3) FR4 PCB, single-sided copper, 1 cm²

(4) FR4 PCB, 4-layer copper, standard footprint

(5) FR4 PCB, single-sided copper, standard footprint

Fig 1. Power derating curves

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Product data sheet

Rev. 1 — 19 June 2015

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BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

6. Thermal characteristics

Table 6.

Symbol

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Max

298

151

114

154

76

Unit

K/W

[1]

[2]

[3]

[4]

[5]

thermal resistance from junction to ambient

in free air

R_th(j-sp)

thermal resistance from junction to solder point

in free air

20

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm².

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm²

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=

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ꢄ.ꢌ:ꢅ

ꢊꢉꢇꢈ

ꢊꢉꢈ

ꢂ

ꢁꢊ

ꢊꢉꢃꢃ

ꢊꢉꢂꢈ

ꢊꢉꢂ

ꢊꢉꢁ

ꢊꢉꢊꢈ

ꢁꢊ

ꢊꢉꢊꢂ

ꢊꢉꢊꢁ

ꢁ

ꢊ

ꢆ ꢁ

ꢁꢊ

ꢆ ꢈ

ꢆ ꢋ

ꢆ ꢃ

ꢆ ꢂ

ꢆ ꢁ

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ꢁꢊ

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S

FR4 PCB, single-sided copper, tin-plated and standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

BC69PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

4 of 15

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

006aac684

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

2

10

0.75

0.5

0.33

0.25

0.2

0.1

10

0.05

0.02

0

0.01

1

–1

10

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm²

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

006aac685

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

2

10

0.75

0.5

0.33

0.25

0.2

0.1

10

0.05

0.02

1

0

0.01

–1

10

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm²

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

BC69PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

5 of 15

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

006aac686

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

0.75

2

10

0.5

0.33

0.25

0.2

0.1

10

0.05

0.02

0.01

0

1

–1

10

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, 4-layer copper, tin-plated and standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

006aac687

3

10

Z

th(j-a)

(K/W)

2

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

10

0.1

0.05

0.02

1

0.01

0

–1

10

–5

–4

–3

–2

–1

2

3

10

1

10

t

p

(s)

FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm²

Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values

BC69PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

6 of 15

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

7. Characteristics

Table 7.

Characteristics

T_amb= 25 C unless otherwise specified

Symbol

Parameter

Conditions

Min

-

Typ

Max Unit

I_CBO

collector-base cut-off current

V_CB= 25 V; I_E= 0 A

-

100 nA

V_CB= 25 V; I_E= 0 A; T_j= 150 C

V_EB= 5 V; I_C= 0 A

-

10

A

I_EBO

h_FE

emitter-base cut-off current

DC current gain

-

100 nA

V_CE= 10 V; I_C= 5 mA

V_CE= 1 V; I_C= 500 mA

V_CE= 1 V; I_C= 1 A

50

85

60

40

100

160

-

[1]

-

375

-

V_CE= 1 V; I_C= 2 A

-

h_FEselection-16

h_FEselection-25

V_CE= 1 V; I_C= 500 mA

I_C= 1 A; I_B= 100 mA

I_C= 2 A; I_B= 200 mA

I_C= 5 mA; V_CE= 10 V

I_C= 1 A; V_CE= 1 V

-

250

375

-

V_CEsat

collector-emitter saturation

voltage

-

0.5

0.6

0.7

1

V

-

V

V_BE

base-emitter voltage

-

V

-

V

f_T

transition frequency

collector capacitance

V_CE= 5 V; I_C= 50 mA; f = 100 MHz

V_CB= 10 V; I_E= i_e= 0 A; f = 1 MHz

40

-

140

28

-

MHz

pF

C_c

-

[1] Pulse test: t_p 300 ms;   0.02

006aac697

006aab403

300

−2.4

C

I

(A)

h

FE

(1)

(2)

−2.0

I

(mA) = −18.0

B

−16.2

−12.6

−14.4

−10.8

200

−1.6

−1.2

−0.8

−9.0

−5.4

−7.2

−3.6

100

(3)

−0.4

−1.8

0

-10

-4

-3

-2

-1

-10

-1

-10

0

−1

−2

−3

−4

−5

I

(A)

V

CE

(V)

C

V_CE= 1 V

(1) T_amb= 100 C

(2) _amb= 25 C

(3) T_amb= 55 C

T_amb= 25 C

T

Fig 7. h_FEselection -16: DC current gain as a

function of collector current; typical values

Fig 8. h_FEselection -16: Collector current as a

function of collector-emitter voltage; typical

values

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Product data sheet

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BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

006aac698

006aac699

-1.2

-1

V

(V)

CEsat

(V)

BE

(1)

-1

-0.8

-10

(1)

(2)

(3)

-2

(3)

-0.4

-10

-3

0.0

-1

-10

2

3

4

-1

2

3

4

-10

-1

-10

(mA)

-10

-1

-10

I (mA)

C

I

C

V_CE= 1 V

I_C/I_B= 10

(1) T_amb= 55 C

(2) T_amb= 25 C

(1) T_amb= 100 C

(2) T_amb= 25 C

(3)

T_amb= 100 C

(3) T_amb= 55 C

Fig 9. h_FEselection -16: Base-emitter voltage as a

function of collector current; typical values

Fig 10. h_FEselection -16: Collector-emitter saturation

voltage as a function of collector current;

typical values

006aac707

006aab404

400

−2.4

I

C

(1)

h

(A)

FE

I

(mA) = −12.0

−2.0

B

−10.8

−8.4

300

(2)

−9.6

−7.2

−1.6

−1.2

−0.8

−0.4

0

−6.0

−3.6

200

−4.8

−2.4

(3)

100

−1.2

0

-10

-4

-3

-2

-1

-10

-1

-10

0

−1

−2

−3

−4

−5

I

(A)

V

CE

(V)

C

V_CE= 1 V

T_amb= 25 C

(1) T_amb= 100 C

(2)

T_amb= 25 C

(3) T_amb= 55 C

Fig 11. h_FEselection -25: DC current gain as a

function of collector current; typical values

Fig 12. h_FEselection -25: Collector current as a

function of collector-emitter voltage; typical

values

BC69PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

8 of 15

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

006aac708

aaa-018434

-1.2

-1

V

(V)

CEsat

(V)

BE

(1)

-1

-0.8

-10

(2)

(3)

(1)

(3)

-2

-0.4

-10

(2)

-3

0.0

-1

-10

2

3

4

-1

2

3

4

-10

-1

-10

(mA)

-10

-1

-10

I (mA)

C

I

C

V_CE= 1 V

I_C/I_B= 10

(1) T_amb= 55 C

(2) T_amb= 25 C

(1) T_amb= 100 C

(2) T_amb= 25 C

(3)

T_amb= 100 C

(3) T_amb= 55 C

Fig 13. h_FEselection -25: Base-emitter voltage as a

function of collector current; typical values

Fig 14. h_FEselection -25: Collector-emitter saturation

voltage as a function of collector current;

typical values

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

BC69PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

9 of 15

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

9. Package outline

0.65

max

1.3

0.45

0.35

0.25

0.04

max

1

2

2.1

1.9

1.1

0.9

0.3

0.2

3

1.6

1.4

2.1

1.9

Dimensions in mm

14-03-18

Fig 15. Package outline DFN2020D-3 (SOT1061D)

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Product data sheet

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BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

10. Soldering

Footprint information for reflow soldering of DFN2020D-3 package

SOT1061D

2.1

1.7

1.3

0.4 (2x)

0.3 (2x)

0.5 (2x)

0.5 (2x) 0.6 (2x) 0.7 (2x)

0.25

1.1

0.35

0.3

0.25

2.5 2.3

0.25

1

1.1 1.2

0.35

0.3

0.4

0.5

1.5

1.6

1.7

occupied area

solder resist

solder paste

solder lands

Dimensions in mm

14-03-05

14-03-12

Issue date

sot1061d_fr

Fig 16. Reflow soldering footprint DFN2020D-3 (SOT1061D)

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Product data sheet

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BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

11. Revision history

Table 8.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BC69PAS_SER v.1

20150619

Product data sheet

-

BC69PAS_SER

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Product data sheet

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BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Suitability for use in automotive applications — This NXP

12.2 Definitions

Semiconductors product has been qualified for use in automotive

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

BC69PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

13 of 15

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BC69PAS_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 19 June 2015

14 of 15

BC69PAS series

NXP Semiconductors

20 V, 2 A PNP medium power transistors

14. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . 1

Features and benefits. . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

Quality information . . . . . . . . . . . . . . . . . . . . . . 9

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

3

4

5

6

7

8

8.1

9

10

11

12

Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.1

12.2

12.3

12.4

13

14

Contact information. . . . . . . . . . . . . . . . . . . . . 14

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 June 2015

Document identifier: BC69PAS_SER


型号：	BC69PAS
厂家：	NXP
描述：	暂无描述开关光电二极管晶体管
文件：	总15页 (文件大小：878K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC69PAS [NXP]

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