BC807W [NXP]
PNP general purpose transistor; PNP通用晶体管
| 型号： | BC807W |
| 厂家： | 
NXP |
| 描述： | PNP general purpose transistor |
| 文件： | 总8页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC807W
PNP general purpose transistor
1999 May 18
Product specification
Supersedes data of 1997 Jun 09
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
FEATURES
PINNING
PIN
•
•
High current (max. 500 mA)
Low voltage (max. 45 V).
DESCRIPTION
1
2
3
base
emitter
collector
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
3
handbook, halfpage
PNP transistor in a SOT323 plastic package.
NPN complement: BC817W.
3
2
MARKING
1
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
1
2
BC807W
5D
5A
BC807-25W
BC807-40W
5B
5C
Top view
BC807-16W
MAM048
Note
Fig.1 Simplified outline (SOT323) and symbol.
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
open base; IC = −10 mA
−45
−5
open collector
−500
−1
mA
A
ICM
IBM
−200
200
+150
150
+150
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb ≤ 25 °C; note 1
−65
−
junction temperature
operating ambient temperature
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 18
2
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
625
UNIT
Rth j-a
thermal resistance from junction to ambient
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = −20 V
MIN.
MAX.
−100
UNIT
collector cut-off current
−
−
−
nA
µA
nA
IE = 0; VCB = −20 V; Tj = 150 °C
IC = 0; VEB = −5 V
−5
IEBO
hFE
emitter cut-off current
DC current gain
BC807W
−100
IC = −100 mA; VCE = −1 V; note 1;
see Figs 2, 3 and 4
100
100
160
250
40
600
250
400
600
−
BC807-16W
BC807-25W
BC807-40W
DC current gain
IC = −500 mA; VCE = −1 V; note 1
IC = −500 mA; IB = −50 mA; note 1
VCEsat
collector-emitter saturation
voltage
−
−700
mV
VBE
Cc
fT
base-emitter voltage
collector capacitance
transition frequency
IC = −500 mA; VCE = −1 V; note 1
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
−1.2
10
−
V
pF
IC = −10 mA; VCE = −5 V; f = 100 MHz 80
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 May 18
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
MBH717
250
h
FE
V
= −1 V
200
CE
150
100
50
0
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
BC807-16W.
Fig.2 DC current gain; typical values.
1999 May 18
4
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
MBH718
500
h
FE
400
V
= −1 V
CE
300
200
100
0
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
BC807-25W.
Fig.3 DC current gain; typical values.
MBH719
500
h
FE
V
= −1 V
400
CE
300
200
100
0
−1
2
3
−10
−1
−10
−10
−10
I
(mA)
C
BC807-40W.
Fig.4 DC current gain; typical values.
5
1999 May 18
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 May 18
6
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807W
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 18
7
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© Philips Electronics N.V. 1999
SCA64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 May 18
Document order number: 9397 750 05954
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